K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
History
Draft Date
Remark
1. Initial issue
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26)
- tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
Aug. 24. 2003
Jan. 27. 2004
Advance
Preliminary
Preliminary
2. Added Addressing method for program operation
0.2
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
Apr. 23. 2004
0.3
1. PKG(TSOP1, WSOP1) Dimension Change
May. 19. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
128M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
K9F1G08Q0A
1.70 ~ 1.95V
K9F1G08U0A-Y,P
Organization
PKG Type
Only available in MCP
X8
2.7 ~ 3.6V
K9F1G08U0A-V,F
TSOP1
WSOP1
FEATURES
• Voltage Supply
-1.8V device(K9F1G08Q0A): 1.70V~1.95V
-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
• Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : 2K-Byte
- Random Read : 25µs(Max.)
- Serial Access : 30ns(Min.) : (K9F1G08U0A)
50ns(Min.) : (K9F1G08Q0A)
• Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Cache Program Operation for High Performance Program
• Intelligent Copy-Back Operation
• Unique ID for Copyright Protection
• Package :
- K9F1G08U0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0A-VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0A-FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0A-V,F(WSOPI ) is the same device as
K9F1G08U0A-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 50ns (30ns, K9F1G08U0A)
cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0A′s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
2
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9F1G08X0A-YCB0,PCB0/YIB0,PIB0
X8
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
X8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
0.10
MAX
0.004
Unit :mm/Inch
#48
#24
#25
12.40
0.488 MAX
12.00
0.472
+0.003
( 0.25 )
0.010
#1
0.008-0.001
0.50
0.0197
0.16 -0.03
+0.075
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
0.25
0.010 TYP
1.00±0.05
0.039±0.002
0.125 0.035
+0.07
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
( 0.50 )
0.020
3
1.20
0.047MAX
0.05
0.002 MIN
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1G08U0A-VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
0.58±0.04
15.40±0.10
#48
#24
#25
0.20
0.50TYP
(0.50±0.06)
12.40MAX
12.00±0.10
+0.07
-0.03
0.16
+0.07
-0.03
#1
8°
0°~
0.10 +0.075
-0.035
(0.01Min)
0.45~0.75
17.00±0.20
4
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode.
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
5
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Figure 1-1. K9F1G08X0A (X8) Functional Block Diagram
VCC
VSS
A12 - A27
X-Buffers
Latches
& Decoders
1024M + 32M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2048 + 64)Byte x 65536
Data Register & S/A
Cache Register
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE PRE WP
Figure 2-1. K9F1G08X0A (X8) Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1024 Blocks
= 1056 Mbits
64K Pages
(=1,024 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
Row Address
Row Address
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
6
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Product Introduction
The K9F1G08X0A is a 1056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2112x8 columns. Spare 64 columns are located from column address of 2048~2111. A 2112-byte data register and a 2112-byte cache register are serially connected to each other. Those serially connected registers are connected to memory cell arrays for accommodating data transfer
between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells
that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND
structured strings. A NAND structure consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1G08X0A.
The K9F1G08X0A has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block
erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 128M byte physical space
requires 28 addresses, thereby requiring four cycles for addressing: 2 cycles of column address, 2 cycles of row address, in that
order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9F1G08X0A.
The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers
are being programmed into memory cells in cache program mode. The program performace may be dramatically improved by cache
program when there are lots of pages of data to be programmed.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
1st. Cycle
2nd. Cycle
Read
Function
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
80h
10h
Cache Program
80h
15h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
Random Data Input*
85h
-
Random Data Output*
05h
E0h
Read Status
70h
Acceptable Command during Busy
O
O
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Command not specified in command sets table is not permitted to be entered to the device, which can raise erroneous operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
7
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under
Bias
Storage Temperature
Rating
Symbol
K9F1G08X0A-XCB0
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
VCC
-0.2 to + 2.45
-0.6 to + 4.6
V
-10 to +125
TBIAS
K9F1G08X0A-XIB0
°C
-40 to +125
K9F1G08X0A-XCB0
TSTG
-65 to +150
°C
Ios
5
mA
K9F1G08X0A-XIB0
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1G08X0A-XCB0 :TA=0 to 70°C, K9F1G08X0A-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1G08U0A(3.3V)
K9F1G08Q0A(1.8V)
Min
Typ.
Max
Min
Typ.
Max
Unit
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
8
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with Serial
Operating Access
Current
Program
Erase
Symbol
ICC1
K9F1G08Q0A
K9F1G08U0A
1.8V
3.3V
Test Conditions
tRC=50ns, CE=VIL
IOUT=0mA
Unit
Min
Typ
Max
Min
Typ
Max
-
10
20
-
15
30
ICC2
-
-
10
20
-
15
30
ICC3
-
-
10
20
-
15
30
-
-
1
-
-
1
-
10
50
-
10
50
Stand-by Current(TTL)
ISB1
Stand-by Current(CMOS)
ISB2
CE=VIH, WP=0V/VCC
CE=VCC-0.2,
WP=0V/VCC
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
Input High Voltage
VIH*
-
0.8xVCC
-
0.8xVcc
-
Input Low Voltage, All inputs
VIL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
VOH
-
-
2.4
-
-
-
-
0.1
-
-
0.4
3
4
-
8
10
-
Output Low Voltage Level
Output Low Current(R/B)
VOL
IOL(R/B)
K9F1G08Q0A :IOH=-100µA
Vcc
K9F1G08U0A :IOH=-400µA
-0.1
K9F1G08Q0A :IOL=100uA
K9F1G08U0A :IOL=2.1mA
K9F1G08Q0A :VOL=0.1V
K9F1G08U0A :VOL=0.4V
µA
VCC
+0.3
V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
9
VCC
+0.3
mA
mA
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
Unit
NVB
1004
-
1024
Blocks
NOTE :
1. The K9F1G08X0A may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
AC TEST CONDITION
(K9F1G08X0A-XCB0 :TA=0 to 70°C, K9F1G08X0A-XIB0:TA=-40 to 85°C
K9F1G08Q0A : Vcc=1.70V~1.95V, K9F1G08U0A : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
K9F1G08Q0A
K9F1G08U0A
0V to Vcc
0V to Vcc
5ns
5ns
Vcc/2
Vcc/2
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
Item
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
WE
RE
WP
L
H
X
Mode
Read Mode
L
H
L
H
X
H
L
L
H
H
L
H
L
H
H
L
L
L
H
H
Data Input
Command Input
Address Input(4clock)
Write Mode
Command Input
Address Input(4clock)
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC(2)
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
10
Stand-by
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Program / Erase Characteristics
Parameter
Program Time
Dummy Busy Time for Cache Program
Symbol
Min
Typ
Max
Unit
tPROG
-
300
700
µs
3
700
µs
-
4
cycles
-
-
4
cycles
-
2
3
ms
tCBSY
Main Array
Number of Partial Program Cycles
in the Same Page
-
Nop
Spare Array
Block Erase Time
tBERS
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
AC Timing Characteristics for Command / Address / Data Input
Parameter
Min
Symbol
Max
Unit
K9F1G08Q0A
K9F1G08U0A
K9F1G08Q0A
K9F1G08U0A
CLE setup Time
tCLS
25
10
-
-
ns
CLE Hold Time
tCLH
10
5
-
-
ns
CE setup Time
tCS
35
15
-
-
ns
CE Hold Time
tCH
10
5
-
-
ns
WE Pulse Width
tWP
25
15
-
-
ns
ALE setup Time
tALS
25
10
-
-
ns
ALE Hold Time
tALH
10
5
-
-
ns
Data setup Time
tDS
20
10
-
-
ns
Data Hold Time
tDH
10
5
-
-
ns
Write Cycle Time
tWC
45
30
-
-
ns
WE High Hold Time
tWH
15
10
-
-
ns
ALE to Data Loading Time
tADL
100(1)
100(1)
-
-
ns
NOTE : 1. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
11
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
AC Characteristics for Operation
Parameter
Min
Symbol
Max
Unit
K9F1G08Q0A
K9F1G08U0A
K9F1G08Q0A
K9F1G08U0A
tR
-
-
25
25
µs
ALE to RE Delay
tAR
10
10
-
-
ns
CLE to RE Delay
tCLR
10
10
-
-
ns
Ready to RE Low
tRR
20
20
-
-
ns
RE Pulse Width
tRP
25
15
-
-
ns
WE High to Busy
tWB
-
-
100
100
ns
Read Cycle Time
tRC
50
30
-
-
ns
RE Access Time
tREA
-
-
30
18
ns
CE Access Time
tCEA
-
-
45
23
ns
RE High to Output Hi-Z
tRHZ
-
-
30
30
ns
CE High to Output Hi-Z
tCHZ
-
-
20
20
ns
RE or CE High to Output hold
tOH
15
15
-
-
ns
RE High Hold Time
tREH
15
10
-
-
ns
tIR
0
0
-
-
ns
WE High to RE Low
tWHR
60
60
-
-
ns
Device Resetting Time
(Read/Program/Erase)
tRST
-
-
5/10/500(1)
5/10/500(1)
µs
Data Transfer from Cell to Register
Output Hi-Z to RE Low
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
12
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid
block has non-FFh data at the column address of 2048. Since the invalid block information is also erasable in most cases, it is
impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s)
based on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any
intentional erasure of the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Create (or update)
Invalid Block(s) Table
No
Check "FFh" at the column address
2048 of the 1st and 2nd page in the block
Check "FFh
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create invalid block table.
13
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification
operation is not needed.
Start
Write 00h
Write 80h
Write Address
Write Address
Write Data
Write 30h
Write 10h
Wait for tR Time
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
Verify Data
No
Fail
*
Program Error
Pass
Program Completed
*
Program Error
Yes
No
I/O 0 = 0 ?
*
Yes
14
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Write 30h
Read Status Register
Read Data
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
No
Reclaim the Error
Yes
*
No
Erase Error
Verify ECC
Yes
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
{
nth
Block A
1
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
2
(page)
* Step1
When an error happens in the nth page of the Block ’A’during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’by creating an ’invalid Block’table or other appropriate scheme.
15
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited.
Page 63
(64)
Page 63
:
Page 31
:
(32)
Page 31
:
Page 2
Page 1
Page 0
(1)
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
Data register
(3)
(32)
(2)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
(64)
Ex.) Random page program (Prohibition)
Data (64)
DATA IN: Data (1)
16
Data (64)
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE don’t-care
WE
≈
≈
CE
ALE
I/Ox
80h
Address(4Cycles)
tCS
Data Input
Data Input
10h
tCEA
tCH
CE
CE
tREA
RE
tWP
WE
I/O0~7
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/Ox
00h
Address(4Cycle)
Data Output(serial access)
30h
17
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NOTE
I/O
DATA
I/Ox
Data In/Out
Col. Add1
Col. Add2
Row Add1
Row Add2
I/O 0 ~ I/O 7
~2112byte
A0~A7
A8~A11
A12~A19
A20~A27
Device
K9F1G08X0A
ADDRESS
Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDH
tDS
I/Ox
Command
Address Latch Cycle
tCLS
CLE
tCS
tWC
CE
tWC
tWP
tWP
tWC
tWP
tWP
WE
tWH
tALH
tALS
tWH
tALH
tALS
tWH
tALH
tALS
tALS
tALH
ALE
tDS
I/Ox
tDH
Col. Add1
tDS
tDH
Col. Add2
18
tDS
tDH
Row Add1
tDS
tDH
Row Add2
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Input Data Latch Cycle
tCLH
≈
CLE
tCH
≈
CE
tALS
ALE
tWP
tWP
≈
≈
tWC
tWP
WE
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
I/Ox
DIN final*
DIN 1
≈
DIN 0
NOTES : DIN final means 2112
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
≈
CE
tREH
tREA
tREA
≈
tREA
tRP
RE
tCHZ*
tOH
tRHZ*
tRHZ*
I/Ox
Dout
tRC
≈
tRR
Dout
≈
tOH
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
19
Dout
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA
tCHZ*
tWHR
tOH
RE
tDS
I/Ox
tDH
tIR*
tREA
tRHZ*
tOH
Status Output
70h
20
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Read Operation
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tR
tRHZ
tOH
tRC
≈
RE
I/Ox
00h
Col. Add1
Col. Add2
Row Add1
Column Address
Row Add2
30h
Dout N
Dout N+1
≈ ≈
tRR
Row Address
Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE
tWB
tCHZ
tAR
tOH
ALE
tRC
tR
RE
tRR
I/Ox
00h
Col. Add1
Col. Add2
Column Address
Row Add1
Row Add2
Dout N
30h
Row Address
Busy
R/B
21
Dout N+1
Dout N+2
Dout M
22
R/B
I/Ox
RE
ALE
WE
CE
CLE
00h
Col. Add2
Column Address
Col. Add1
Random Data Output In a Page
Row Add2
Row Address
Row Add1
30h
Busy
tRR
tR
tWB
tAR
Dout N
tRC
Dout N+1
05h
Col Add1
Col Add2
Column Address
E0h
tWHR
tCLR
Dout M
tREA
Dout M+1
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tADL
tPROG
ALE
I/Ox
80h
SerialData
Input Command
Co.l Add1
Col. Add2
Column Address
Row Add1
Row Add2
Row Address
≈ ≈
RE
Din
Din
N
M
1 up to m Byte
Serial Input
70h
m = 2112byte
I/O0=0 Successful Program
I/O0=1 Error in Program
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
23
I/O0
Read Status
Command
≈
R/B
10h
Program
Command
24
R/B
I/Ox
RE
ALE
WE
Col. Add1
Col. Add2
tWC
Row Add2 Row Add3
Row Address
Row Add1
tADL
Din
M
Serial Input
Din
N
Col. Add1
Col. Add2
tADL
Random Data Column Address
Input Command
85h
tWC
Din
K
Serial Input
Din
J
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Serial Data
Column Address
Input Command
80h
tWC
≈
≈ ≈
CE
≈
≈ ≈
CLE
10h
Program
Command
tWB
tPROG
≈
Page Program Operation with Random Data Input
70h
Read Status
Command
I/O0
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
25
R/B
I/Ox
RE
ALE
WE
Col Add2
Row Add1 Row Add2
Column Address Row Address
Col Add1
35h
tR
tWB
Col Add2
Row Add1 Row Add2
Column Address Row Address
Col Add1
Copy-Back Data
Input Command
Busy
85h
Data 1
tADL
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
00h
tWC
≈
CE
≈
≈ ≈
CLE
Data N
10h
tWB
tPROG
70h
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
Busy
≈
Copy-Back Program Operation with Random Data Input
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
26
R/B
I/Ox
RE
ALE
WE
Col Add1 Col Add2 Row Add1 Row Add2
Din
N
Din
M
Serial Input
tADL
≈
≈ ≈
15h
Program
Command
(Dummy)
tWB
tCBSY :
max. 700us
tCBSY
80h
I/Ox
R/B
tCBSY
Address &
15h
Data Input
Col Add1,2 & Row Add1,2
Data
80h
Ex.) Cache Program
80h
Address &
Data Input
15h
tCBSY
80h
Din
N
Address &
Data Input
15h
tCBSY
Last Page Input & Program
Col Add1 Col Add2 Row Add1 Row Add2
tADL
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Max. 63 times repeatable
Serial Data Column Address Row Address
Input Command
80h
tWC
≈
CE
≈
≈ ≈
CLE
tPROG
Address &
Data Input
10h
Program Confirm
Command
(True)
80h
Din
M
tWB
≈
Cache Program Operation(available only within a block)
10h
tPROG
70h
70h
I/O
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
BLOCK ERASE OPERATION
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/Ox
60h
Row Add1
Row Add2
D0h
70h
I/O 0
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
≈
Row Address
Read Status
Command
27
I/O0=0 Successful Erase
I/O0=1 Error in Erase
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox
90h
Read ID Command
00h
Address. 1cycle
Device
Code*
ECh
XXh
Maker Code Device Code
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F1G08Q0A
A1h
15h
K9F1G08U0A
F1h
15h
ID Defintition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
4th cyc.*
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization,Serial access minimum
28
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
4th ID Data
ITEM
Description
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
Block Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
Redundant Area Size
( byte/512byte)
8
16
Organization
x8
x16
Serial Access minimum
50ns
25ns
Reserved
Reserved
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
29
0
0
1
1
0
1
0
1
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Device Operation
PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command
is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up.
The 2112 bytes of data within the selected page are transferred to the data registers in less than 25µs(tR). The system controller can
detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 50ns (30ns, K9F1G08U0A) cycle time by sequentially pulsing RE. The repetitive high to low transitions
of the RE clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
00h
Address(4Cycle)
Data Output(Serial Access)
30h
Col Add1,2 & Row Add1,2
Data Field
Spare Field
30
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Figure 7. Random Data Output In a Page
tR
R/B
RE
I/Ox
Address
4Cycles
00h
Data Output
30h
05h
Address
2Cycles
E0h
Data Output
Col Add1,2 & Row Add1,2
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for main array(1time/512byte) and 4 times for spare
array(1time/16byte). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data
loading period in which up to 2112bytes of data may be loaded into the data register, followed by a non-volatile programming period
where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address of next data, which will be entered, may be changed to the address which follows random data
input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
10h
70h
Pass
I/O0
Col Add1,2 & Row Add1,2
"1"
Data
Fail
31
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
85h
Address & Data Input
10h
70h
Col Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Pass
I/O0
"1"
Fail
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte data registers, and is available only within a block.
Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed
into memory cell.
After writing the first set of data up to 2112byte into the selected cache registers, Cache Program command (15h) instead of actual
Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY) and has its cache registers ready for the
next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may
be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command,
tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the
pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit(I/
O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of
programming only with R/B, the last page of the target programming sequence must be progammed with actual Page Program command (10h).
Figure 10. Cache Program(available only within a block)
tCBSY
R/B
80h
Address &
Data Input*
15h
Col Add1,2 & Row Add1,2
Data
tCBSY
80h
Address &
Data Input
15h
Col Add1,2 & Row Add1,2
Data
tPROG
tCBSY
80h
Address &
Data Input
15h
Col Add1,2 & Row Add1,2
Data
32
Address &
10h
Data Input
Col Add1,2 & Row Add1,2
Data
80h
70h
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input command
(85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple distant portions of the source page is
allowed as shown in Figure 12. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But if
the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. For this reason,
two bit ECC is recommended for copy-back operation."
Figure 11. Page Copy-Back program Operation
tR
tPROG
R/B
I/Ox
00h
Add.(4Cycles)
35h
85h
Add.(4Cycles)
10h
Pass
I/O0
70h
Col. Add1,2 & Row Add1,2
Destination Address
Col. Add1,2 & Row Add1,2
Source Address
Fail
Figure 12. Page Copy-Back program Operation with Random Data Input
tPROG
tR
R/B
I/Ox
00h
Add.(4Cycles)
35h
Col. Add1,2 & Row Add1,2
Source Address
85h
Add.(4Cycles)
Data
Col. Add1,2 & Row Add1,2
Destination Address
33
85h
Add.(2Cycles)
Data
10h
Col Add1,2
There is no limitation for the number of repetition.
70h
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60h). Only address A18 to A27 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
60h
I/Ox
Address Input(2Cycle)
Pass
I/O0
70h
D0h
"1"
Block Add. : A12 ~ A27
Fail
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table2. Read Staus Register Definition
I/O No.
Page Program
Block Erase
Cache Prorgam
Read
I/O 0
Pass/Fail
Pass/Fail
Pass/Fail(N)
Not use
Pass : "0"
Definition
Fail : "1"
I/O 1
Not use
Not use
Pass/Fail(N-1)
Not use
Pass : "0"
Fail : "1"
I/O 2
Not use
Not use
Not use
Not use
"0"
I/O 3
Not Use
Not Use
Not Use
Not Use
"0"
"0"
I/O 4
Not Use
Not Use
Not Use
Not Use
I/O 5
Ready/Busy
Ready/Busy
True Ready/Busy
Ready/Busy
Busy : "0"
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Protected:"0"
Ready : "1"
Ready : "1"
Not Protected:"1"
NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.
2. I/Os defined ’Not use’are recommended to be masked out when Read Status is being executed.
34
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Figure 14. Read ID Operation
tCLR
CLE
tCEA
CE
WE
tAR
ALE
RE
tWHR
I/OX
90h
00h
tREA
ECh
Maker code
Address. 1cycle
Device
Code*
XXh
4th Cyc.*
Device code
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F1G08Q0A
A1h
15h
K9F1G08U0A
F1h
15h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation.If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after
the Reset command is written. Refer to Figure 15 below.
Figure 15. RESET Operation
tRST
R/B
I/OX
FFh
Table3. Device Status
Operation Mode
After Power-up
After Reset
00h command is latched
Waiting for next command
35
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
Rp
VCC
ibusy
1.8V device - VOL : 0.1V, VOH : VCC-0.1V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
Figure 17. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
Ibusy [A]
Ibusy [A]
200
2.4
Ibusy
300n
200n
1.7
tr
100n
3m
30
0.85
90
60
tf
1.7
1.7
tr,tf [s]
1K
2K
2m
200n
1m
100n
120
0.57
1.7
3K
Rp(ohm)
0.43
Rp(min, 3.3V part) =
0.8
2m
1.8
1.8
1.8
2K
3K
Rp(ohm)
4K
0.6
tf
tr,tf [s]
4K
1K
1.85V
VCC(Max.) - VOL(Max.)
=
3mA + ΣIL
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
100
50
1.8
1.7
IOL + ΣIL
150
3m
1.2
tr
Rp value guidance
Rp(min, 1.8V part) =
Ibusy
300n
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
36
1m
K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is
required before internal circuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for
program/erase provides additional software protection.
≈
Figure 17. AC Waveforms for Power Transition
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
High
≈
VCC
WE
10µs
≈
≈
WP
37
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V