F25L16PA (2S)

ESMT
F25L16PA (2S)
Flash
„
16 Mbit Serial Flash Memory
with Dual
FEATURES
y
Single supply voltage 2.7~3.6V
y
Standard and Dual
y
Speed
- Read max frequency: 50MHz
- Fast Read max frequency: 50MHz / 86MHz / 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
(100MHz / 172MHz / 200MHz equivalent Dual SPI)
y
y
y
„
Low power consumption
- Active current: 23.5 mA (max.)
- Standby current: 25 μ A (max.)
- Deep Power Down current: 10 μ A (max.)
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 1.5 ms (typical)
y
Erase
- Chip Erase time 10 sec (typical)
- 64K bytes Block Erase time 1 sec (typical)
- 32K bytes Block Erase time 500 ms (typical)
- 4K bytes Sector Erase time 120 ms (typical)
y
Page Programming
- 256 byte per programmable page
y
Lockable 512 bytes OTP security sector
y
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y
End of program or erase detection
y
Write Protect ( WP )
y
Hold Pin ( HOLD )
y
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
Speed
F25L16PA –50PG2S
50MHz
F25L16PA –86PG2S
86MHz
F25L16PA –100PG2S
100MHz
F25L16PA –50PAG2S
50MHz
F25L16PA –86PAG2S
86MHz
F25L16PA –100PAG2S
100MHz
F25L16PA –50PHG2S
50MHz
F25L16PA –86PHG2S
86MHz
F25L16PA –100PHG2S
100MHz
F25L16PA –50DG2S
50MHz
F25L16PA –86DG2S
86MHz
F25L16PA –100DG2S
100MHz
F25L16PA –50HG2S
50MHz
F25L16PA –86HG2S
86MHz
F25L16PA –100HG2S
100MHz
Package
Comments
8-lead
SOIC
150 mil
Pb-free
8-lead
SOIC
200 mil
Pb-free
16-lead
SOIC
300 mil
Pb-free
8-pin
PDIP
300 mil
Pb-free
8-contact
WSON
6x5 mm
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
1/42
ESMT
„
F25L16PA (2S)
GENERAL DESCRIPTION
The F25L16PA is a 16Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 8,192 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
„
is divided into 512 uniform sectors with 4K byte each; 64 uniform
blocks with 32K byte each; 32 uniform blocks with 64K byte each.
Sectors can be erased individually without affecting the data in
other sectors. Blocks can be erased individually without affecting
the data in other blocks. Whole chip erase capabilities provide
the flexibility to revise the data in the device. The device has
Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
Memory
Array
High Voltage
Generator
Page Buffer
Status
Register
Y-Decoder
Byte Address
Latch / Counter
Command and Conrol Logic
Serial Interface
CE
SCK
SI
(SIO0)
SO
(SIO1)
Elite Semiconductor Memory Technology Inc.
WP
HOLD
Publication Date: Nov. 2012
Revision: 1.4
2/42
ESMT
„
F25L16PA (2S)
PIN CONFIGURATIONS
8-Lead SOIC
(SOIC 8L, 150mil Body, 1.27mm Pin Pitch)
(SOIC 8L, 208mil Body, 1.27mm Pin Pitch)
CE
SO / SIO1
WP
VSS
1
8
VDD
2
7
HOLD
3
6
SCK
4
5
SI / SIO0
16-Lead SOIC
(SOIC 16L, 300mil Body, 1.27mm Pin Pitch)
HOLD
1
16
SCK
VDD
2
15
SI / SIO0
NC
3
14
NC
NC
4
13
NC
NC
5
12
NC
NC
6
11
NC
CE
7
10
VSS
8
9
WP
SO / SIO1
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
3/42
ESMT
F25L16PA (2S)
8-Pin PDIP
(PDIP 8P, 300mil Body, 2.54mm Pin Pitch)
CE
1
8
VDD
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI / SIO0
SO / SIO1
8- Contact WSON
(WSON 8C, 6mmX5mm Body, 1.27mm Contact Pitch)
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
4/42
ESMT
„
F25L16PA (2S)
PIN DESCRIPTION
Symbol
Pin Name
SCK
Serial Clock
SI / SIO0
Serial Data Input /
Serial Data Input Output 0
SO / SIO1
Serial Data Output /
Serial Data Input Output 1
CE
Chip Enable
To activate the device when CE is low.
WP
Write Protect
The Write Protect ( WP ) pin is used to enable/disable BPL bit in the status
register.
HOLD
Hold
VDD
Power Supply
VSS
Ground
Elite Semiconductor Memory Technology Inc.
Functions
To provide the timing for serial input and output operations
To transfer commands, addresses or data serially into the device. Data is
latched on the rising edge of SCK (for Standard read mode). / Bidirectional IO
pin to transfer commands, addresses or data serially into the device on the
rising edge of SCK and read data or status from the device on the falling edge
of SCK(for Dual mode).
To transfer data serially out of the device. Data is shifted out on the falling edge
of SCK (for Standard read mode). / Bidirectional IO pin to transfer commands,
addresses or data serially into the device on the rising edge of SCK and read
data or status from the device on the falling edge of SCK (for Dual mode).
To temporality stop serial communication with SPI flash memory without
resetting the device.
To provide power.
Publication Date: Nov. 2012
Revision: 1.4
5/42
ESMT
„
F25L16PA (2S)
SECTOR STRUCTURE
Table 1: F25L16PA Sector Address Table
64KB
Block
32KB
Block
63
31
62
61
30
60
59
29
58
57
28
56
55
27
54
53
26
52
Sector
Sector Size
(Kbytes)
Address range
511
4KB
1FF000H – 1FFFFFH
:
:
:
504
4KB
1F8000H – 1F8FFFH
503
4KB
1F7000H – 1F7FFFH
:
:
:
496
4KB
1F0000H – 1F0FFFH
495
4KB
1EF000H – 1EFFFFH
:
:
:
488
4KB
1E8000H – 1E8FFFH
487
4KB
1E7000H – 1E7FFFH
:
:
:
480
4KB
1E0000H – 1E0FFFH
479
4KB
1DF000H – 1DFFFFH
:
:
:
472
4KB
1D8000H – 1D8FFFH
471
4KB
1D7000H – 1D7FFFH
:
:
:
464
4KB
1D0000H – 1D0FFFH
463
4KB
1CF000H – 1CFFFFH
:
:
:
456
4KB
1C8000H – 1C8FFFH
455
4KB
1C7000H – 1C7FFFH
:
:
:
448
4KB
1C0000H – 1C0FFFH
447
4KB
1BF000H – 1BFFFFH
:
:
:
440
4KB
1B8000H – 1B8FFFH
439
4KB
1B7000H – 1B7FFFH
:
:
:
432
4KB
1B0000H – 1B0FFFH
431
4KB
1AF000H – 1AFFFFH
:
:
:
424
4KB
1A8000H – 1A8FFFH
423
4KB
1A7000H – 1A7FFFH
:
:
:
416
4KB
1A0000H – 1A0FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A20
A19
A18
A17
A16
1
1
1
1
1
1
1
1
1
0
1
1
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
0
Publication Date: Nov. 2012
Revision: 1.4
6/42
ESMT
F25L16PA (2S)
Table 1: F25L16PA Sector Address Table – Continued I
64KB
Block
32KB
Block
51
25
50
49
24
48
47
23
46
45
22
44
43
21
42
41
20
40
39
19
38
Sector
Sector Size
(Kbytes)
Address range
415
4KB
19F000H – 19FFFFH
:
:
:
408
4KB
198000H – 198FFFH
407
4KB
197000H – 197FFFH
:
:
:
400
4KB
190000H – 190FFFH
399
4KB
18F000H – 18FFFFH
:
:
:
392
4KB
188000H – 188FFFH
391
4KB
187000H – 187FFFH
:
:
:
384
4KB
180000H – 180FFFH
383
4KB
17F000H – 17FFFFH
:
:
:
376
4KB
178000H – 178FFFH
375
4KB
177000H – 177FFFH
:
:
:
368
4KB
170000H – 170FFFH
367
4KB
16F000H – 16FFFFH
:
:
:
360
4KB
168000H – 168FFFH
359
4KB
167000H – 167FFFH
:
:
:
352
4KB
160000H – 160FFFH
351
4KB
15F000H – 15FFFFH
:
:
:
344
4KB
158000H – 158FFFH
343
4KB
157000H – 157FFFH
:
:
:
336
4KB
150000H – 150FFFH
335
4KB
14F000H – 14FFFFH
:
:
:
328
4KB
148000H – 148FFFH
327
4KB
147000H – 147FFFH
:
:
:
320
4KB
140000H – 140FFFH
319
4KB
13F000H – 13FFFFH
:
:
:
312
4KB
138000H – 138FFFH
311
4KB
137000H – 137FFFH
:
:
:
304
4KB
130000H – 130FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A20
A19
A18
A17
A16
1
1
0
0
1
1
1
0
0
0
1
0
1
1
1
1
0
1
1
0
1
0
1
0
1
1
0
1
0
0
1
0
0
1
1
Publication Date: Nov. 2012
Revision: 1.4
7/42
ESMT
F25L16PA (2S)
Table 1: F25L16PA Sector Address Table – Continued II
64KB
Block
32KB
Block
37
18
36
35
17
34
33
16
32
31
15
30
29
14
28
27
13
26
25
12
24
Sector
Sector Size
(Kbytes)
Address range
303
4KB
12F000H – 12FFFFH
:
:
:
296
4KB
128000H – 128FFFH
295
4KB
127000H – 127FFFH
:
:
:
288
4KB
120000H – 120FFFH
287
4KB
11F000H – 11FFFFH
:
:
:
280
4KB
118000H – 118FFFH
279
4KB
117000H – 117FFFH
:
:
:
272
4KB
110000H – 110FFFH
271
4KB
10F000H – 10FFFFH
:
:
:
264
4KB
108000H – 108FFFH
263
4KB
107000H – 107FFFH
:
:
:
256
4KB
100000H – 100FFFH
255
4KB
0FF000H – 0FFFFFH
:
:
:
248
4KB
0F8000H – 0F8FFFH
247
4KB
0F7000H – 0F7FFFH
:
:
:
240
4KB
0F0000H – 0F0FFFH
239
4KB
0EF000H – 0EFFFFH
:
:
:
232
4KB
0E8000H – 0E8FFFH
231
4KB
0E7000H – 0E7FFFH
:
:
:
224
4KB
0E0000H – 0E0FFFH
223
4KB
0DF000H – 0DFFFFH
:
:
:
216
4KB
0D8000H – 0D8FFFH
215
4KB
0D7000H – 0D7FFFH
:
:
:
208
4KB
0D0000H – 0D0FFFH
207
4KB
0CF000H – 0CFFFFH
:
:
:
200
4KB
0C8000H – 0C8FFFH
199
4KB
0C7000H – 0C7FFFH
:
:
:
192
4KB
0C0000H – 0C0FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A20
A19
A18
A17
A16
1
0
0
1
0
1
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
1
1
1
0
0
1
1
0
1
0
1
1
0
0
Publication Date: Nov. 2012
Revision: 1.4
8/42
ESMT
F25L16PA (2S)
Table 1: F25L16PA Sector Address Table – Continued III
64KB
Block
32KB
Block
23
11
22
21
10
20
19
9
18
17
8
16
15
7
14
13
6
12
11
5
10
Sector
Sector Size
(Kbytes)
Address range
191
4KB
0BF000H – 0BFFFFH
:
:
:
184
4KB
0B8000H – 0B8FFFH
183
4KB
0B7000H – 0B7FFFH
:
:
:
176
4KB
0B0000H – 0B0FFFH
175
4KB
0AF000H – 0AFFFFH
:
:
:
168
4KB
0A8000H – 0A8FFFH
167
4KB
0A7000H – 0A7FFFH
:
:
:
160
4KB
0A0000H – 0A0FFFH
159
4KB
09F000H – 09FFFFH
:
:
:
152
4KB
098000H – 098FFFH
151
4KB
097000H – 097FFFH
:
:
:
144
4KB
090000H – 090FFFH
143
4KB
08F000H – 08FFFFH
:
:
:
136
4KB
088000H – 088FFFH
135
4KB
087000H – 087FFFH
:
:
:
128
4KB
080000H – 080FFFH
127
4KB
07F000H – 07FFFFH
:
:
:
120
4KB
078000H – 078FFFH
119
4KB
077000H – 077FFFH
:
:
:
112
4KB
070000H – 070FFFH
111
4KB
06F000H – 06FFFFH
:
:
:
104
4KB
068000H – 068FFFH
103
4KB
067000H – 067FFFH
:
:
:
96
4KB
060000H – 060FFFH
95
4KB
05F000H – 05FFFFH
:
:
:
88
4KB
058000H – 058FFFH
87
4KB
057000H – 057FFFH
:
:
:
80
4KB
050000H – 050FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A20
A19
A18
A17
A16
0
1
0
1
1
0
1
0
1
0
0
1
0
0
1
0
1
0
0
0
0
0
1
1
1
0
0
1
1
0
0
0
1
0
1
Publication Date: Nov. 2012
Revision: 1.4
9/42
ESMT
F25L16PA (2S)
Table 1: F25L16PA Sector Address Table – Continued IV
64KB
Block
32KB
Block
9
4
8
7
3
6
5
2
4
3
1
2
1
0
0
Sector
Sector Size
(Kbytes)
Address range
79
4KB
04F000H – 04FFFFH
:
:
:
72
4KB
048000H – 048FFFH
71
4KB
047000H – 047FFFH
:
:
:
64
4KB
040000H – 040FFFH
63
4KB
03F000H – 03FFFFH
:
:
:
56
4KB
038000H – 038FFFH
55
4KB
037000H – 037FFFH
:
:
:
48
4KB
030000H – 030FFFH
47
4KB
02F000H – 02FFFFH
:
:
:
40
4KB
028000H – 028FFFH
39
4KB
027000H – 027FFFH
:
:
:
32
4KB
020000H – 020FFFH
31
4KB
01F000H – 01FFFFH
:
:
:
24
4KB
018000H – 018FFFH
23
4KB
017000H – 017FFFH
:
:
:
16
4KB
010000H – 010FFFH
15
4KB
00F000H – 00FFFFH
:
:
:
8
4KB
008000H – 008FFFH
7
4KB
007000H – 007FFFH
:
:
:
0
4KB
000000H – 000FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A20
A19
A18
A17
A16
0
0
1
0
0
0
0
0
1
1
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
Publication Date: Nov. 2012
Revision: 1.4
10/42
ESMT
„
F25L16PA (2S)
STATUS REGISTER
The software status register provides status on whether the flash
memory array is available for any Read or Write operation,
whether the device is Write enabled, and the state of the memory
Write protection. During an internal Erase or Program operation,
the status register may be read only to determine the completion
of an operation in progress. Table 2 describes the function of
each bit in the software status register.
Table 2: Software Status Register
Bit
Name
Function
Default at
Power-up
Read/Write
0
R
0
R
0
0
0
0
0
R/W
R/W
R/W
R/W
N/A
0
R/W
Status Register
0
BUSY
1
WEL
2
3
4
5
6
BP0
BP1
BP2
BP3
RESERVED
7
BPL
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Reserved for future use
1 = BP3, BP2,BP1,BP0 are read-only bits
0 = BP3, BP2,BP1,BP0 are read/writable
Note:
1. BUSY and WEL are read only.
2. BP0~3 and BPL bits are non-volatile.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal
memory Write Enable Latch. If this bit is set to “1”, it indicates the
device is Write enabled. If the bit is set to “0” (reset), it indicates
the device is not Write enabled and does not accept any memory
Write (Program/ Erase) commands. This bit is automatically reset
under the following conditions:
•
•
•
•
•
•
•
BUSY
The BUSY bit determines whether there is an internal Erase or
Program operation in progress. A “1” for the BUSY bit indicates
the device is busy with an operation in progress. A “0” indicates
the device is ready for the next valid operation.
Power-up
Write Disable (WRDI) instruction completion
Page Program instruction completion
Sector Erase instruction completion
Block Erase instruction completion
Chip Erase instruction completion
Write Status Register instructions
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
11/42
ESMT
F25L16PA (2S)
Table 3: F25L16PA Block Protection Table
Protection Level
Status Register Bit
BP3
BP2
BP1
Protected Memory Area
BP0
Block Range
Address Range
0
0
0
0
0
None
None
Upper 1/32
0
0
0
1
Block 31
1F0000H – 1FFFFFH
Upper 1/16
0
0
1
0
Block 30~31
1E0000H – 1FFFFFH
Upper 1/8
0
0
1
1
Block 28~31
1C0000H – 1FFFFFH
Upper 1/4
0
1
0
0
Block 24~31
180000H – 1FFFFFH
Upper 1/2
0
1
0
1
Block 16~31
100000H – 1FFFFFH
All Blocks
0
1
1
0
Block 0~31
000000H – 1FFFFFH
All Blocks
0
1
1
1
Block 0~31
000000H – 1FFFFFH
All Blocks
1
0
0
0
Block 0~31
000000H – 1FFFFFH
All Blocks
1
0
0
1
Block 0~31
000000H – 1FFFFFH
Bottom 1/2
1
0
1
0
Block 0~15
000000H – 0FFFFFH
Bottom 3/4
1
0
1
1
Block 0~23
000000H –17FFFFH
Bottom 7/8
1
1
0
0
Block 0~27
000000H –1BFFFFH
Bottom 15/16
1
1
0
1
Block 0~29
000000H – 1DFFFFH
Bottom 31/32
1
1
1
0
Block 0~30
000000H – 1EFFFFH
All Blocks
1
1
1
1
Block 0~31
000000H – 1FFFFFH
Block Protection (BP3, BP2, BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP3, BP2, BP1, BP0) bits define the
memory area, as defined in Table 3, to be software protected
against any memory Write (Program or Erase) operations. The
Write Status Register (WRSR) instruction is used to program the
WP pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any
further alteration of the BPL, BP3, BP2, BP1 and BP0 bits. When
BP3, BP2, BP1 and BP0 bits as long as WP is high or the
Block- Protection-Look (BPL) bit is 0. Chip Erase can only be
executed if BP3, BP2, BP1 and BP0 bits are all 0. The factory
default setting for Block Protection Bit (BP3 ~ BP0) is 0.
Elite Semiconductor Memory Technology Inc.
the WP pin is driven high (VIH), the BPL bit has no effect and its
value is “Don’t Care”.
Publication Date: Nov. 2012
Revision: 1.4
12/42
ESMT
„
F25L16PA (2S)
HOLD OPERATION
HOLD pin is used to pause a serial sequence underway with the
SPI flash memory without resetting the clocking sequence. To
activate the HOLD mode, CE must be in active low state. The
Figure 1 for Hold Condition waveform.
Once the device enters Hold mode, SO will be in high impedance
state while SI and SCK can be VIL or VIH.
HOLD mode begins when the SCK active low state coincides
with the falling edge of the HOLD signal. The HOLD mode ends
If CE is driven active high during a Hold condition, it resets the
when the HOLD signal’s rising edge coincides with the SCK
active low state.
internal logic of the device. As long as HOLD signal is low, the
memory remains in the Hold condition. To resume
If the falling edge of the HOLD signal does not coincide with the
SCK active low state, then the device enters Hold mode when the
SCK next reaches the active low state.
high, and CE must be driven active low. See Figure 27 for Hold
timing.
communication with the device, HOLD must be driven active
Similarly, if the rising edge of the HOLD signal does not
coincide with the SCK active low state, then the device exits in
Hold mode when the SCK next reaches the active low state. See
S CK
HO L D
A ctive
A ctive
Ho ld
Ho ld
A ctive
Figure 1: HOLD Condition Waveform
„
WRITE PROTECTION
The device provides software Write Protection.
The Write-Protect pin ( WP ) enables or disables the lock-down
function of the status register. The Block-Protection bits (BP3,
BP2, BP1, BP0 and BPL) in the status register provide Write
protection to the memory array and the status register.
Write Protect Pin ( WP )
The Write-Protect ( WP ) pin enables the lock-down function of
the BPL bit (bit 7) in the status register. When WP is driven low,
the execution of the Write Status Register (WRSR) instruction is
Table 4: Conditions to Execute Write-Status- Register
(WRSR) Instruction
WP
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
determined by the value of the BPL bit (see Table 4). When WP
is high, the lock-down function of the BPL bit is disabled.
Elite Semiconductor Memory Technology Inc.
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ESMT
„
F25L16PA (2S)
INSTRUCTIONS
Instructions are used to Read, Write (Erase and Program), and
configure the F25L16PA. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Page Program, Write Status Register, Sector
Erase, Block Erase, or Chip Erase instructions, the Write Enable
(WREN) instruction must be executed first. The complete list of
the instructions is provided in Table 5. All instructions are
entered and must be driven high after the last bit of the instruction
has been shifted in (except for Read, Read ID, Read Status
Register, Read Electronic Signature instructions). Any low to high
synchronized off a high to low transition of CE . Inputs will be
accepted on the rising edge of SCK starting with the most
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
significant bit. CE must be driven low before an instruction is
Table 5: Device Operation Instruction
Operation
Max.
Freq
Erase Suspend
Erase Resume
1
SIN SOUT
50 MHz 03H Hi-Z
0BH Hi-Z
3BH
20H Hi-Z
52H Hi-Z
D8H Hi-Z
60H /
Hi-Z
C7H
75H
Hi-Z
7AH Hi-Z
Page Program (PP) 6
50MHz 02H
Read
Fast Read
12,13
Fast Read Dual Output
4
Sector Erase (4K Byte)
Block Erase5 (32K Byte)
Block Erase5 (64K Byte)
Chip Erase
Deep Power Down (DP)
Read Status Register
~
(RDSR) 7
Write Status Register
10
(WRSR)
Write Enable (WREN) 10
Write Disable (WRDI)/ Exit 100MHz
secured OTP mode
Enter secured OTP mode
(ENSO)
Release from Deep Power
Down (RDP)
Read Electronic Signature
8
(RES)
RES in secured OTP mode
& not lock down
RES in secured OTP mode
& lock down
2
SIN
SOUT
A23-A16 Hi-Z
A23-A16 Hi-Z
A23-A16
A23-A16 Hi-Z
A23-A16 Hi-Z
A23-A16 Hi-Z
Bus Cycle 1~3
3
4
SIN
SOUT SIN SOUT
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8
A7-A0
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
5
SIN
X
X
SOUT
DOUT0
X
X
-
6
SIN SOUT
X DOUT1
X DOUT0
DOUT0~1
-
N
SIN
X
X
SOUT
cont.
cont.
cont.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hi-Z
A15-A8
DIN0
Hi-Z
DIN1
DOUT
(S7-S0)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hi-Z
-
-
-.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hi-Z A23-A16
Hi-Z A7-A0 Hi-Z
Up to
Hi-Z 256 Hi-Z
bytes
-
B9h
Hi-Z
-
05H
Hi-Z
X
01H
Hi-Z
06H
Hi-Z
DIN
(S7-S0)
-
04H
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
B1H
Hi-Z
-
-
-
-
-.
-
-
-
-
-
-
-
ABH
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
ABH
Hi-Z
X
X
X
X
X
X
X
14H
-
-
-
-
ABH
Hi-Z
X
X
X
X
X
X
X
34H
-
-
-
-
ABH
Hi-Z
X
X
X
X
X
X
X
74H
-
-
-
-
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ESMT
F25L16PA (2S)
Table 5: Device Operation Instruction - Continued
Max.
Freq
Operation
Jedec Read ID
9
(JEDEC-ID)
Read ID (RDID) 11
1
2
Bus Cycle 1~3
3
4
SOUT SIN SOUT
SIN
SOUT
SIN
SOUT
SIN
50MHz 9FH
~
100MHz 90H
Hi-Z
X
8CH
X
21H
X
Hi-Z
00H
Hi-Z
00H
Hi-Z
00H
01H
5
6
N
SIN
SOUT
SIN
SOUT
SIN
SOUT
15H
-
-
-
-
-
-
Hi-Z
Hi-Z
X
X
8CH
14H
X
X
14H
8CH
-
-
Notes:
1.
2.
3.
4.
5.
6.
7.
Operation: SIN = Serial In, SOUT = Serial Out, Bus Cycle 1 = Op Code
X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary); cont. = continuous
One bus cycle is eight clock periods.
4K byte Sector Earse addresses: use AMS -A12, remaining addresses can be VIL or VIH.
32K byte Block Earse addresses: use AMS -A15, remaining addresses can be VIL or VIH
64K byte Block Earse addresses: use AMS -A16, remaining addresses can be VIL or VIH
To continue programming to the next sequential address location, enter the 8-bit command, followed by the data to be
programmed.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
The JEDEC-Read-ID is output first byte 8CH as manufacture ID; second byte 21H as memory type; third byte 15H as
memory capacity.
10. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each
other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both
instructions effective. A successful WRSR can reset WREN.
8.
9.
11. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction.
12. Dual commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in.
13. Dual output data:
IO0 = (D6, D4, D2, D0), (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1), (D7, D5, D3, D1)
DOUT0
DOUT1
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ESMT
F25L16PA (2S)
Read (50MHz)
The Read instruction supports up to 50 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
the data from address location 1FFFFFH had been read, the next
output will be from address location 000000H.
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
(wrap-around) of the address space, i.e. for 16Mbit density, once
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A23 -A0]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
Figure 2: Read Sequence
Fast Read (50 MHz ~ 100 MHz)
The Fast Read instruction supporting up to 100 MHz is initiated
by executing an 8-bit command, 0BH, followed by address bits
all addresses until terminated by a low to high transition on CE .
The internal address pointer will automatically increment until the
highest memory address is reached. Once the highest memory
address is reached, the address pointer will automatically
increment to the beginning (wrap-around) of the address space,
i.e. for 16Mbit density, once the data from address location
1FFFFFH has been read, the next output will be from address
location 000000H.
[A23 -A0] and a dummy byte. CE must remain active low for the
duration of the Fast Read cycle. See Figure 3 for the Fast Read
sequence.
Following a dummy byte (8 clocks input dummy cycle), the Fast
Read instruction outputs the data starting from the specified
address location. The data output stream is continuous through
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
ADD.
0B
SI
MSB
SO
15 16
23 24
ADD.
31 32
ADD.
39 40
47 48
55 56
63 64
71 72
80
X
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)
Figure 3: Fast Read Sequence
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F25L16PA (2S)
Fast Read Dual Output (50 MHz ~ 100 MHz)
The Fast Read Dual Output instruction is initiated by executing
an 8-bit command, 3BH, followed by address bits [A23 -A0] and a
The Fast Read Dual Output (3BH) instruction is similar to the
standard Fast Read (0BH) instruction except the data is output
on bidirectional I/O pins (SIO0 and SIO1). This allows data to be
transferred from the device at twice the rate of standard SPI
devices. This instruction is for quickly downloading code from
Flash to RAM upon power-up or for applications that cache codesegments to RAM for execution.
dummy byte. CE must remain active low for the duration of the
Fast Read Dual Output cycle. See Figure 4 for the Fast Read
Dual Output sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
43 44
3B
MSB
SIO1
ADD.
MSB
HIGH IMPENANCE
ADD.
ADD.
55 56
51 52
IO0 switches from In put to Ouput
Dummy
SIO0
47 48
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4
D OUT
DOUT
D OU T
D OU T
D OUT
N
N+1
N+2
N+3
N+4
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5
Note: The input data durin g the dummy clocks is “don’t care”.
However , the IO0 pin should be high-impefance piror to th e falling edge of the first data clock.
Figure 4: Fast Read Dual Output Sequence
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F25L16PA (2S)
Page Program (PP)
The Page Program instruction allows many bytes to be
programmed in the memory. The bytes must be in the erased
state (FFH) when initiating a Program operation. A Page
Program instruction applied to a protected memory area will be
ignored.
latched data are discarded and the last 256 bytes Data are
guaranteed to be programmed correctly within the same page. If
less than 256 bytes Data are sent to device, they are correctly
programmed at the requested addresses without having any
effects on the other bytes of the same page.
Prior to any Write operation, the Write Enable (WREN) instruction
CE must be driven high before the instruction is executed. The
user may poll the BUSY bit in the software status register or wait
TPP for the completion of the internal self-timed Page Program
operation. While the Page Program cycle is in progress, the Read
Status Register instruction may still be accessed for checking the
status of the BUSY bit. It is recommended to wait for a duration of
TBP before reading the status register to check the BUSY bit. The
BUSY bit is a 1 during the Page Program cycle and becomes a 0
when the cycle is finished and the device is ready to accept other
instructions again. After the Page Program cycle has finished, the
Write-Enable-Latch (WEL) bit in the Status Register is cleared to
0. See Figure 7 for the Page Program sequence.
must be executed. CE must remain active low for the duration
of the Page Program instruction. The Page Program instruction is
initiated by executing an 8-bit command, 02H, followed by
address bits [A23-A0]. Following the address, at least one byte
Data is input (the maximum of input data can be up to 256 bytes).
If the 8 least significant address bits [A7-A0] are not all zero, all
transmitted data that goes beyond the end of the current page
are programmed from the start address of the same page (from
the address whose 8 least significant bits [A7-A0] are all zero).
If more than 256 bytes Data are sent to the device, previously
Figure 7: Page Program Sequence
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F25L16PA (2S)
64K Byte Block Erase
The 64K-byte Block Erase instruction clears all bits in the
selected block to FFH. A Block Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits [A23
-A0]. Address bits [AMS -A16] (AMS = Most Significant address) are
used to determine the block address (BAX), remaining address
bits can be VIL or VIH. CE must be driven high before the
instruction is executed. The user may poll the BUSY bit in the
Software Status Register or wait TBE for the completion of the
internal self-timed Block Erase cycle. See Figure 9 for 64K Byte
Block Erase sequence.
CE
MODE3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK MODE0
ADD.
D8
SI
MSB
ADD.
ADD.
MSB
HIGH IMPENANCE
SO
Figure 9: 64K-byte Block Erase Sequence
32K Byte Block Erase
The 32K-byte Block Erase instruction clears all bits in the
selected block to FFH. A Block Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block Erase instruction is initiated by
executing an 8-bit command, 52H, followed by address bits [A23
-A0]. Address bits [AMS -A15] (AMS = Most Significant address) are
used to determine the block address (BAX), remaining address
bits can be VIL or VIH. CE must be driven high before the
instruction is executed. The user may poll the BUSY bit in the
Software Status Register or wait TBE for the completion of the
internal self-timed Block Erase cycle. See Figure 10 for 32K Byte
Block Erase sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
ADD.
52
SI
MSB
SO
15 16
23 24
ADD.
31
ADD.
MSB
HIGH IMPENANCE
Figure 10: 64K-byte Block Erase Sequence
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F25L16PA (2S)
4K Byte Sector Erase
The Sector Erase instruction clears all bits in the selected sector
to FFH. A Sector Erase instruction applied to a protected memory
area will be ignored. Prior to any Write operation, the Write
Enable (WREN) instruction must be executed. CE must remain
active low for the duration of the any command sequence. The
Sector Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A23 -A0]. Address bits
[AMS -A12] (AMS = Most Significant address) are used to determine
the sector address (SAX), remaining address bits can be VIL or
VIH. CE must be driven high before the instruction is executed.
The user may poll the BUSY bit in the Software Status Register
or wait TSE for the completion of the internal self-timed Sector
Erase cycle. See Figure 11 for the Sector Erase sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
ADD.
20
SI
15 16
MSB
23 24
ADD.
31
ADD.
MSB
HIGH IMPENANCE
SO
Figure 11: 4K-byte Sector Erase Sequence
Chip Erase
The Chip Erase instruction clears all bits in the device to FFH. A
Chip Erase instruction will be ignored if any of the memory area is
protected. Prior to any Write operation, the Write Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Chip Erase instruction sequence. The Chip
Erase instruction is initiated by executing an 8-bit command, 60H
or C7H. CE must be driven high before the instruction is
executed. The user may poll the BUSY bit in the Software Status
Register or wait TCE for the completion of the internal self-timed
Chip Erase cycle. See Figure 12 for the Chip Erase sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
60 or C7
SI
MSB
SO
HIGH IMPENANCE
Figure 12: Chip Erase Sequence
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F25L16PA (2S)
Erase Suspend
The Erase Suspend instruction allows the system to interrupt a
Sector or Block Erase operation and then read from any other
sector or block. The Write Status Register instruction and Sector /
Block Erase instructions are not allowed during suspend. Erase
Suspend is valid only during the Sector or Block Erase operation.
If written during the Chip Erase or Program operation, the Erase
Suspend instruction is ignored. A maximum of TSUS is required to
suspend the erase operation. The BUSY bit in the Software
Status Register will clear to “0” after Erase Suspend. A power-off
during the suspend period will reset the device and release the
suspend status.
CE
MODE3
SCK MODE0
0
1
2
3
SI
4
5
6
7
TSUS
75
MSB
HIGH IMPEDANCE
SO
Accept Read or Program Instruction
Figure 13: Erase Suspend Instruction
Erase Resume
The Erase Resume instruction must be written to resume the
Sector or Block Erase operation after Erase Suspend. After
issued the BUSY bit in the Software Status Register will be set to
“1” and the sector or block will complete the erase operation.
Erase Resume instruction will be ignored unless an Erase
Suspend operation is active.
CE
MODE3
SCK MODE0
0
1
2
3
4
5
6
7
7A
SI
MSB
Resume Sec tor or Block Erase
Figure 14: Erase Resume Instruction
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F25L16PA (2S)
Write Enable (WREN)
The Write Enable (WREN) instruction sets the Write-EnableLatch bit in the Software Status Register to 1 allowing Write
operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE must be driven high before the
WREN instruction is executed.
CE
0 1 2 3 4 5 6 7
MODE3
SCK MODE0
06
SI
MSB
HIGH IMPENANCE
SO
Figure 15: Write Enable (WREN) Sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction resets the Write-EnableLatch bit to 0 disabling any new Write operations from occurring
or exits from OTP mode to normal mode.
CE must be driven high before the WRDI instruction is
executed.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
04
SI
MSB
SO
HIGH IMPENANCE
Figure 16: Write Disable (WRDI) Sequence
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F25L16PA (2S)
Write Status Register (WRSR)
The Write Status Register instruction writes new values to the
BP3, BP2, BP1, BP0 and BPL (Status Register) bits of the status
When WP is high, the lock-down function of the BPL bit is
disabled and the BPL, BP0, BP1, BP2 and BP3 bits in the status
register. CE must be driven low before the command sequence
of the WRSR instruction is entered and driven high before the
register can all be changed. As long as BPL bit is set to 0 or WP
pin is driven high (VIH) prior to the low-to-high transition of the
WRSR instruction is executed. CE must be driven high after the
eighth or sixteenth bit of data that is clocked in. If it is not done,
the WRSR instruction will not be issued. See Figure 17 for
WREN and WRSR instruction sequences.
CE pin at the end of the WRSR instruction, the bits in the status
register can all be altered by the WRSR instruction. In this case,
a single WRSR instruction can set the BPL bit to “1” to lock down
the status register as well as altering the BP0; BP1, BP2 and BP3
bits at the same time. See Table 4 for a summary description of
Executing the Write Status Register instruction will be ignored
WP and BPL functions.
when WP is low and BPL bit is set to “1”. When the WP is
low, the BPL bit can only be set from “0” to “1” to lock down the
status register, but cannot be reset from “1” to “0”.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1 2 3 4 5 6 7
Stauts Register
Da ta In
7 6 5 4 3 2 1 0
01
06
SI
MSB
MSB
HIGH IMPENANCE
SO
Figure 17: Write Enable (WREN) and Write Status Register (WRSR)
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation. When a Write
operation is in progress, the BUSY bit may be checked before
sending any new commands to assure that the new commands
are properly received by the device.
CE must be driven low before the RDSR instruction is entered
and remain low until the status data is read. The RDSR
instruction code is “05H” for Status Register. Read Status
Register is continuous with ongoing clock cycles until it is
terminated by a low to high transition of the CE . See Figure 18
for the RDSR instruction sequence.
CE
MODE3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCK MODE0
05
SI
MSB
SO
HIGH IMPEDANCE
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0
MSB
Status Register Data Out
Figure 18: Read Status Register (RDSR) Sequence
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F25L16PA (2S)
Enter OTP Mode (ENSO)
The ENSO (B1H) instruction is for entering the additional 512
bytes secured OTP mode. The additional 512 bytes secured OTP
sector is independent from main array, which may use to store
unique serial number for system identifier. User must unprotect
whole array (BP0=BP1=BP2=BP3=0), prior to any Program
operation in OTP sector. After entering the secured OTP mode,
only the secured OTP sector can be accessed and user can only
follow the Read or Program procedure with OTP address range
(address bits [A23 –A9] must be “0”). The secured OTP data
cannot be updated again once it is lock down or has been
programmed. In secured OTP mode, WRSR command will
ignore the input data and lock down the secured OTP sector
(OTP_lock bit =1). To exit secured OTP mode, user must
execute WRDI command. RES can be used to verify the secured
OTP status as shown in Table 6.
Figure 19: Enter OTP Mode (ENSO) Sequence
OTP Sector Address
Size
Address Range
512 bytes
000000H ~ 0001FFH
Note: The OTP sector is an independent Sector.
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F25L16PA (2S)
Deep Power Down (DP)
Once the device is in deep power down status, all instructions will
be ignored except the Release from Deep Power Down
instruction (RDP) and Read Electronic Signature instruction
(RES). The device always power-up in the normal operation with
the standby current (ISB1). See Figure 20 for the Deep Power
Down instruction.
The Deep Power Down instruction is for minimizing power
consumption (the standby current is reduced from ISB1 to ISB2.).
This instruction is initiated by executing an 8-bit command, B9H,
and then CE must be driven high. After CE is driven high, the
device will enter to deep power down within the duration of TDP.
CE
MODE3
0
1
2
3
4
5
6
SCK MODE0
7
T DP
B9
SI
MSB
Standard Current
Deep Power Down Current
(ISB2)
Figure 20: Deep Power Down Instruction
Release from Deep Power Down (RDP) and Read Electronic-Signature (RES)
The Release form Deep Power Down and Read
Electronic-Signature instruction is a multi-purpose instruction.
The instruction can be used to release the device from the deep
power down status. This instruction is initiated by driving CE
low and executing an 8-bit command, ABH, and then drive CE
high. See Figure 21 for RDP instruction. Release from the deep
power down will take the duration of TRES1 before the device will
resume normal operation and other instructions are accepted.
CE must remain high during TRES1.
The instruction also can be used to read the 8-bit ElectronicSignature of the device on the SO pin. It is initiated by driving
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CE low and executing an 8-bit command, ABH, followed by 3
dummy bytes. The Electronic-Signature byte is then output from
the device. The Electronic-Signature can be read continuously
until CE go high. See Figure 22 for RES sequence. After
driving CE high, it must remain high during for the duration of
TRES2, and then the device will resume normal operation and
other instructions are accepted.
The instruction is executed while an Erase, Program or WRSR
cycle is in progress is ignored and has no effect on the cycle in
progress. In OTP mode, user also can execute RES to confirm
the status of OTP.
Publication Date: Nov. 2012
Revision: 1.4
25/42
ESMT
F25L16PA (2S)
CE
MODE3
0
1
2
3
4
5
6
7
T RES1
SCK MODE0
AB
SI
MSB
HIGH IMPEDANCE
SO
Standby Current
Deep Power Down Current
(ISB2)
Figure 21: Release from Deep Power Down (RDP) Instruction
CE
MODE3
SCK MODE0
0
1
2
3
4
5
6
7
8
30
9
31
32
33
34
35
36
37
38
TRES2
SS
3 Dummy Bytes
SS
AB
SI
MSB
SO
HIGH IMPEDANCE
SS
Electronic-Signature Data Out
MSB
Deep Power Down Current
(ISB2)
Standby
Current
Figure 22: Read Electronic -Signature (RES) Sequence
Table 6: Electronic Signature Data
Command
RES
Mode
Electronic Signature Data
Normal
14H
In secured OTP mode &
non lock down (OTP_lock =0)
34H
In secured OTP mode &
lock down (OTP_lock =1)
74H
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
JEDEC Read-ID
The JEDEC Read-ID instruction identifies the device as
F25L16PA and the manufacturer as ESMT. The device
information can be read from executing the 8-bit command, 9FH.
Following the JEDEC Read-ID instruction, the 8-bit
manufacturer’s ID, 8CH, is output from the device. After that, a
16-bit device ID is shifted out on the SO pin. Byte1, 8CH,
identifies the manufacturer as ESMT. Byte2, 21H, identifies the
memory type as SPI Flash. Byte3, 15H, identifies the device as
F25L16PA. The instruction sequence is shown in Figure 23.
The JEDEC Read ID instruction is terminated by a low to high
transition on CE at any time during data output. If no other
command is issued after executing the JEDEC Read-ID
instruction, issue a 00H (NOP) command before going into
Standby Mode ( CE =VIH).
Figure 23: JEDEC Read-ID Sequence
Table 7: JEDEC Read-ID Data
Manufacturer’s ID
(Byte 1)
8CH
Elite Semiconductor Memory Technology Inc.
Device ID
Memory Type
(Byte 2)
Memory Capacity
(Byte 3)
21H
15H
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
Read-ID (RDID)
The Read-ID instruction (RDID) identifies the devices as
F25L16PA and manufacturer as ESMT. This command is
backward compatible to all ESMT SPI devices and should be
used as default device identification when multiple versions of
ESMT SPI devices are used in one design. The device
information can be read from executing an 8-bit command, 90H,
followed by address bits [A23 -A0]. Following the Read-ID
instruction, the manufacturer’s ID is located in address 000000H
and the device ID is located in address 000001H.
Once the device is in Read-ID mode, the manufacturer’s and
device ID output data toggles between address 000000H and
000001H until terminated by a low to high transition on CE .
CE
MODE3
SCK MODE0
15 16
0 1 2 3 4 5 6 7 8
90
SI
00
39 40
47 4 8
55 56
63
1
00
ADD
MSB
MSB
SO
31 32
23 24
HIGH IMPENANCE
8C
14
8C
14
HIGH
IMPENA NCE
MSB
Note: The Manufacture’s an d Device ID o utput stream i s continu ous until terminated by a low to high transition on CE.
1. 00H will output the Manufacture’s ID first a nd 01H will output Device ID first b efore toggling between the two. .
Figure 24: Read ID Sequence
Table 8: Product ID Data
Address
000000H
000001H
Elite Semiconductor Memory Technology Inc.
Byte1
Byte2
8CH
14H
Manufacturer’s ID
Device ID
ESMT F25L16PA
14H
8CH
Device ID
ESMT F25L16PA
Manufacturer’s ID
Publication Date: Nov. 2012
Revision: 1.4
28/42
ESMT
„
F25L16PA (2S)
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
TABLE 9: AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 30 and 31
TABLE 10: OPERATING RANGE
Parameter
Symbol
Value
Unit
Operating Supply Voltage
VDD
2.7 ~ 3.6
V
Ambient Operating Temperature
TA
-40 ~ +85
℃
TABLE 11: DC OPERATING CHARACTERISTICS
Symbol
Parameter
Min
Read Current
Standard
@ 50MHz
Dual
Standard
Read Current
@ 86MHz
Dual
Standard
Read Current
@ 100MHz
Dual
Program and Write Status
Register Current
Sector and Block Erase Current
Limits
Max
10
12
15
16.5
22
23.5
Test Condition
Unit
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =0.1 VDD/0.9 VDD, SO=open
15
mA
CE =VDD
15
mA
CE =VDD
Chip Erase Current
20
mA
CE =VDD
ISB1
Standby Current
25
µA
CE =VDD, VIN =VDD or VSS
ISB2
Deep Power Down Current
10
µA
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
0.3 x VDD
VDD +0.4
0.4
µA
µA
V
V
V
V
CE =VDD, VIN =VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
IDDR1
IDDR2
IDDR3
IDDW
IDDE
-0.5
0.7 x VDD
VDD-0.2
Elite Semiconductor Memory Technology Inc.
IOL=1.6 mA
IOH=-100 µA
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
TABLE 12: LATCH UP CHARACTERISTIC
Symbol
1
ILTH
Parameter
Latch Up
Minimum
Unit
Test Method
100 + IDD
mA
JEDEC Standard 78
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: CAPACITANCE (TA = 25°C, f=1 MHz, other pins open)
Parameter
COUT
1
CIN1
Description
Test Condition
Maximum
VOUT = 0V
8 pF
VIN = 0V
6 pF
Output Pin Capacitance
Input Capacitance
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 14: AC OPERATING CHARACTERISTICS
50 MHz
Symbol
86 MHz
100 MHz
Parameter
Unit
Min
Max
Min
Min
Serial Clock Frequency
TSCKH
Serial Clock High Time
9
6
4
ns
TSCKL
Serial Clock Low Time
9
6
4
ns
TCLCH2
Clock Rise Time (Slew Rate)
0.1
0.1
0.1
V/ns
TCHCL2
Clock Fall Time (Slew Rate)
0.1
0.1
0.1
V/ns
TCES
86
Max
FCLK
1
50
Max
100
MHz
CE Active Setup Time
5
5
5
ns
TCEH1
CE Active Hold Time
5
5
5
ns
TCHS1
CE Not Active Setup Time
5
5
5
ns
1
TCHH
CE Not Active Hold Time
5
5
5
ns
TCPH
Read
15
15
15
ns
CE Deselect Time
Write/Erase/Program
50
50
50
ns
7
7
7
ns
TCHZ
CE High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
0
ns
TDS
Data In Setup Time
2
2
2
ns
TDH
Data In Hold Time
1
1
1
ns
THLS
HOLD Low Setup Time
5
5
5
ns
THHS
HOLD High Setup Time
5
5
5
ns
THLH
HOLD Low Hold Time
5
5
5
ns
THHH
HOLD High Hold Time
5
5
5
ns
3
THZ
HOLD Low to High-Z Output
8
8
8
ns
TLZ3
HOLD High to Low-Z Output
8
8
8
ns
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
TABLE 14: AC OPERATING CHARACTERISTICS - Continued
50 MHz
Symbol
86 MHz
100 MHz
Parameter
Unit
Min
Max
Min
Max
Output Hold from SCK Change
TV
Output Valid from SCK
8
8
8
ns
TWHSL4
Write Protect Setup Time before CE Low
20
20
20
ns
TSHWL4
Write Protect Hold Time after CE High
100
100
100
ns
TDP3
CE High to Deep Power Down Mode
3
3
3
us
TRES13
CE High to Standby Mode ( for DP)
3
3
3
us
CE High to Standby Mode (for RES)
1.8
1.8
1.8
us
CE High to next Instruction after Suspend
20
20
20
us
3
TSUS
3
0
Min
TOH
TRES2
0
Max
0
ns
Note:
1.
2.
3.
4.
„
Relative to SCK.
TSCKH + TSCKL must be less than or equal to 1/ FCLK.
Value guaranteed by characterization, not 100% tested in production.
Only applicable as a constraint for a Write status Register instruction when Block- Protection-Look (BPL) bit is set at 1.
TABLE 15: ERASE AND PROGRAMMING PERFORMANCE
Limit
Parameter
Symbol
Typ
2
Max3
Unit
Sector Erase Time (4KB)
TSE
120
250
ms
Block Erase Time (32KB)
TBE1
500
1000
ms
Block Erase Time (64KB)
TBE2
1
2
s
Chip Erase Time
TCE
10
30
s
Write Status Register Time
TW
10
15
ms
Page Programming Time
TPP
1.5
5
ms
100,000
-
Cycles
20
-
Years
Erase/Program Cycles1
Data Retention
Notes:
1.
2.
3.
Not 100% Tested, Excludes external system level over head.
Typical values measured at 25°C, 3V.
Maximum values measured at 85°C, 2.7V.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
Figure 25: Serial Input Timing Diagram
Figure 26: Serial Output Timing Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
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ESMT
F25L16PA (2S)
CE
SCK
SO
SI
HOLD
Figure 27: HOLD Timing Diagram
WP
T WHSL
TSHWL
CE
SCK
SI
HIGH IMPENANCE
SO
Figure 28: Write Protect setup and hold timing during WRSR when BPL = 1
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
VCC
VCC (max)
Program, Erase and Write command is ignored
CE must track VCC
VCC (min)
TVSL
Reset
State
Read command
is allowed
Device is fully
accessible
VWI
TPUW
Time
Figure 29: Power-Up Timing Diagram
Table 16: Power-Up Timing and VWI Threshold
Parameter
Unit
Symbol
Min.
VCC(min) to CE low
TVSL
10
Time Delay before Write instruction
TPUW
1
10
ms
VWI
1
2.5
V
Write Inhibit Threshold Voltage
Max.
us
Note: These parameters are characterized only.
Elite Semiconductor Memory Technology Inc.
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ESMT
F25L16PA (2S)
Input timing reference level
Output timing reference level
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AC
Measurement
Level
0.5VCC
Note : Input pulse rise and fall time are <5ns
Figure 30: AC Input/Output Reference Waveforms
Figure 31: A Test Load Example
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
PACKAGING DIMENSIONS
8-LEAD
SOIC ( 150 mil )
5
GAUGE PLANE
0
0.25
H
E
8
L
DETAIL "X"
1
4
e
b
L1
"X"
A1
A2
A
C
D
SEATING PLANE
Dimension in mm
Dimension in inch
Symbol
Dimension in mm
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
1.35
1.60
1.75
0.053
0.063
0.069
D
4.80
4.90
5.00
0.189
0.193
0.197
A1
0.10
0.15
0.25
0.004
0.006
0.010
E
3.80
3.90
4.00
0.150
0.154
0.157
A2
1.25
1.45
1.55
0.049
0.057
0.061
L
0.40
0.66
0.86
0.016
0.026
0.034
b
0.33
0.406
0.51
0.013
0.016
0.020
e
c
0.19
0.203
0.25
0.0075
0.008
0.010
L1
1.00
1.05
1.10
0.039
0.041
0.043
H
5.80
6.00
6.20
0.228
0.236
0.244
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
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ESMT
F25L16PA (2S)
PACKING DIMENSIONS
8-LEAD
SOIC 200 mil ( official name – 208 mil )
5
1
4
E1
8
E
θ
b
e
A
A2
D
L
A1
L1
SEATING PLANE
Dimension in mm
Dimension in inch
Symbol
DETAIL "X"
Dimension in mm
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
---
---
2.16
---
---
0.085
E
7.70
7.90
8.10
0.303
0.311
0.319
A1
0.05
0.15
0.25
0.002
0.006
0.010
E1
5.18
5.28
5.38
0.204
0.208
0.212
A2
1.70
1.80
1.91
0.067
0.071
0.075
L
0.50
0.65
0.80
0.020
0.026
0.032
b
0.36
0.41
0.51
0.014
0.016
0.020
e
c
0.19
0.20
0.25
0.007
0.008
0.010
L1
1.27
1.37
1.47
0.050
0.054
0.058
D
5.13
5.23
5.33
0.202
0.206
0.210
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
Elite Semiconductor Memory Technology Inc.
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ESMT
F25L16PA (2S)
PACKING DIMENSIONS
16-LEAD
SOIC ( 300 mil )
9
GAUGE PLANE
0
0.25
E
E1
A
16
L
DETAIL "X"
1
8
e
b
A2
A
C
D
"X"
A1
SEATING PLANE
Dimension in mm
Dimension in inch
Symbol
Dimension in mm
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
A
---
---
2.65
---
---
0.104
E
10.30 BSC
0.406 BSC
A1
0.1
---
0.3
0.004
---
0.012
E1
7.50 BSC
0.295 BSC
A2
2.05
---
---
0.081
---
---
L
b
0.31
---
0.51
0.012
---
0.020
e
c
0.20
---
0.33
0.008
---
0.013
θ
D
10.10
10.30
10.50
0.400
0.406
0.413
0.40
Norm
---
Max
1.27
Min
0.016
1.27 BSC
0°
---
Norm
---
Max
0.050
0.050 BSC
8°
0°
---
8°
Controlling dimension : millimenter
Elite Semiconductor Memory Technology Inc.
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ESMT
F25L16PA (2S)
PACKING DIMENSIONS
8-PIN
P-DIP ( 300 mil )
D
8
5
E
A
eB
E1
1
A2
0
4
b
L
A1
S e a t in g P la n e
b
1
e
Symbol
Dimension in mm
Min
Norm
A
Max
Dimension in inch
Min
Norm
5.00
Max
0.21
A1
0.38
A2
3.18
3.30
3.43
0.125
0.130
0.135
D
9.02
9.27
10.16
0.355
0.365
0.400
E
0.015
7.62 BSC.
0.300 BSC.
E1
6.22
6.35
6.48
0.245
0.250
0.255
L
9.02
9.27
10.16
0.115
0.130
0.150
e
eB
2.54 TYP.
8.51
9.02
0.100 TYP.
9.53
0.335
0.355
b
0.46 TYP.
0.018 TYP.
b1
1.52 TYP.
0.060 TYP.
θO
0O
7O
15O
0O
7O
0.375
15O
Controlling dimension : Inch.
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ESMT
F25L16PA (2S)
PACKING DIMENSIONS
8-CONTACT
WSON ( 6x5 mm )
D
E
A
PIN# 1
A1
L
DETAIL : "B"
"A"
E2
b
e
D2
DETAIL : "A"
"B"
PIN# 1
Symbol
A
A1
b
D
D2
E
E2
e
L
Min
0.70
0.00
0.35
5.90
2.50
4.90
2.10
0.55
Dimension in mm
Norm
0.75
0.02
0.40
6.00
2.60
5.00
2.20
1.27 BSC
0.60
Max
0.80
0.05
0.45
6.10
2.70
5.10
2.30
Min
0.028
0.000
0.014
0.232
0.098
0.193
0.083
0.65
0.022
Dimension in inch
Norm
0.030
0.001
0.016
0.236
0.102
0.197
0.087
0.050 BSC
0.024
Max
0.031
0.002
0.018
0.240
0.106
0.201
0.091
0.026
Controlling dimension : millimeter
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ESMT
F25L16PA (2S)
Revision History
Revision
Date
0.1
2011.01.03
Original
0.2
2011.03.03
1. Ordering information : add 2S
2. Remove Byte program time
3. Modify WSON 6x5mm dimension : D2
2.50(min), 2.60(norm), 2.70(max) and E2,
2.10(min), 2.20(norm), 2.30(max)
0.3
2011.04.25
Modify the specification of ISB1 and ISB2
1.0
2011.07.29
Delete Preliminary
1.1
2011.09.23
Modify normal read from 33MHz to 50MHz
1.2
2012.09.21
Modify Ambient Operating Temperature
1.3
2012.10.09
Correct the description of Block Protection, Block
Protection Lock-Down and Erase Suspend
1.4
2012.11.15
Delete Fast Read Dual I/O function
Elite Semiconductor Memory Technology Inc.
Description
Publication Date: Nov. 2012
Revision: 1.4
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ESMT
F25L16PA (2S)
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or
by any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at
the time of publication. ESMT assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
assumed by ESMT for any infringement of patents, copyrights, or other
intellectual property rights of third parties which may result from its use.
No license, either express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of ESMT or
others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4
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