Silicon Epitaxial Planar Switching Diode BAV70

BAV70
Silicon Epitaxial Planar
Switching Diode
FEATURES
Small package
Low forward voltage
Fast reverse recovery time
Small total capacitance
APPLICATIONS
Marking Code: A4
Ultra high speed switching application
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL
VRM
Maximum Peak Reverse Voltage
Reverse Voltage
VALUE
100
UNIT
V
VR
75
V
Average Forward Current
Io
200
mA
Maximum Peak Forward Current
IFM
300
mA
IFSM
1
A
Power Dissipation
Pd
350
mW
Junction Temperature
Tj
150
℃
Non-repetitive Peak Forward Surge Current
at t = 1 s
Storage Temperature Range
Tstg
- 55 to + 150
℃
Characteristics at Ta = 25℃
PARAMETER
SYMBOL
MIN.
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50mA
at IF = 150 mA
VF
-
Reverse Current
at VR = 20 V
at VR = 75 V
at VR = 25 V, TJ = 150℃
at VR = 75 V, TJ = 150℃
IR
-
V(BR)R
75
Total Capacitance at VR = 0 , f = 1 MHz
CT
Reverse Recovery Time
at IF = IR = 10 mA to Irr = 1mA, RL = 50 Ω
trr
Reverse Breakdown Voltage
Website: www.kingtronics.com
Email: [email protected]
Tel: (852) 8106 7033
MAX.
UNIT
715
855
1
1.25
mV
mV
V
V
25
2.5
30
50
nA
µA
µA
µA
-
2
V
pF
-
4
ns
Fax: (852) 8106 7099
1
BAV70
Silicon Epitaxial Planar
Switching Diode
RATINGS AND CHARACTERISTIC CURVES BAV70
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2