BAV70 Silicon Epitaxial Planar Switching Diode FEATURES Small package Low forward voltage Fast reverse recovery time Small total capacitance APPLICATIONS Marking Code: A4 Ultra high speed switching application SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL VRM Maximum Peak Reverse Voltage Reverse Voltage VALUE 100 UNIT V VR 75 V Average Forward Current Io 200 mA Maximum Peak Forward Current IFM 300 mA IFSM 1 A Power Dissipation Pd 350 mW Junction Temperature Tj 150 ℃ Non-repetitive Peak Forward Surge Current at t = 1 s Storage Temperature Range Tstg - 55 to + 150 ℃ Characteristics at Ta = 25℃ PARAMETER SYMBOL MIN. Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50mA at IF = 150 mA VF - Reverse Current at VR = 20 V at VR = 75 V at VR = 25 V, TJ = 150℃ at VR = 75 V, TJ = 150℃ IR - V(BR)R 75 Total Capacitance at VR = 0 , f = 1 MHz CT Reverse Recovery Time at IF = IR = 10 mA to Irr = 1mA, RL = 50 Ω trr Reverse Breakdown Voltage Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 MAX. UNIT 715 855 1 1.25 mV mV V V 25 2.5 30 50 nA µA µA µA - 2 V pF - 4 ns Fax: (852) 8106 7099 1 BAV70 Silicon Epitaxial Planar Switching Diode RATINGS AND CHARACTERISTIC CURVES BAV70 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2