BAV99 Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Repetitive Peak Reverse Voltage VALUE UNIT VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (Double Diode Loaded) IF 125 mA Continuous Forward Current (Single Diode Loaded) IF 215 mA IFRM 450 mA Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms 0.5 IFSM 1 at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range A 4.5 Ptot 350 mW Tj 150 ℃ Tstg - 65 to + 150 ℃ Characteristics at Ta = 25℃ PARAMETER Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150℃ at VR = 75 V, TJ = 150℃ Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR = 1mA, RL = 100 Ω Website: www.kingtronics.com Email: [email protected] SYMBOL MAX. VF 0.715 0.855 1 1.25 UNIT V 30 1 30 50 nA µA µA µA Cd 1.5 pF trr 4 ns IR Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 BAV99 Silicon Epitaxial Planar Switching Diode RATINGS AND CHARACTERISTIC CURVES BAV99 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2