Silicon Epitaxial Planar Switching Diode BAV99

BAV99
Silicon Epitaxial Planar
Switching Diode
Fast switching in thick and thin-film circuits diode
Marking Code: A7
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL
Repetitive Peak Reverse Voltage
VALUE
UNIT
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current (Double Diode Loaded)
IF
125
mA
Continuous Forward Current (Single Diode Loaded)
IF
215
mA
IFRM
450
mA
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
0.5
IFSM
1
at t = 1 μs
Power Dissipation
Junction Temperature
Storage Temperature Range
A
4.5
Ptot
350
mW
Tj
150
℃
Tstg
- 65 to + 150
℃
Characteristics at Ta = 25℃
PARAMETER
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50mA
at IF = 150 mA
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, TJ = 150℃
at VR = 75 V, TJ = 150℃
Diode Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, IR = 1mA, RL = 100 Ω
Website: www.kingtronics.com
Email: [email protected]
SYMBOL
MAX.
VF
0.715
0.855
1
1.25
UNIT
V
30
1
30
50
nA
µA
µA
µA
Cd
1.5
pF
trr
4
ns
IR
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1
BAV99
Silicon Epitaxial Planar
Switching Diode
RATINGS AND CHARACTERISTIC CURVES BAV99
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2