MMBT9018 NPN Silicon Epitaxial Planar Transistors For AM/FM amplifier and local oscillator of FM/VHF tuner applications 1.Base 2.Emitter SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER 3.Collector SYMBOL VALUE UNIT Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 5 V, IC = 1 mA SYMBOL Current Gain Group G H Collector Base Cutoff Current at VCB = 12 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Gain Bandwidth Product at VCE = 5 V, IC = 5 mA Website: www.kingtronics.com MIN. TYP. MAX. UNIT hFE 72 97 - 108 190 - ICBO - - 50 nA V(BR)CBO 30 - - V V(BR)CEO 15 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.5 V Cob - 1.3 1.7 pF fT 700 1100 - MHz Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 MMBT9018 NPN Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES MMBT9018 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2