MOSFET SMD Type N-Channel MOSFET AO4498E (KO4498E) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON) ＜ 5.8mΩ (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 8.5mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 18 14 A 120 3.1 2 W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4498E (KO4498E) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ 30 Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=18A 1.3 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4498E KC**** www.kexin.com.cn 2.3 V VGS=10V, VDS=5V 120 VDS=5V, ID=18A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A mΩ 8.5 A 50 S 1840 2760 230 430 145 340 0.6 1.9 34 50 16 24 5.6 8.4 6 pF Ω nC 14 8 10 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω ns 33 8 IF= 18A, dI/dt= 500A/us 10 15 22 32 nC 4 A 1 V IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking uA 5.8 Qg Qgs uA ±10 8.9 TJ=125℃ VGS=5V, ID=16A Forward Transconductance Unit V VGS=10V, ID=18A On State Drain Current Max MOSFET SMD Type N-Channel MOSFET AO4498E (KO4498E) ■ Typical Characterisitics 100 120 6V 10V 100 VDS=5V 4.5V 80 4V 60 ID(A) ID (A) 80 60 40 3.5V 40 20 20 VGS=3V 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 6 1.8 Normalized On-Resistance 10 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 12 VGS=4.5V 8 6 4 VGS=10V 2 0 0 5 VGS=10V ID=18A 1.6 1.4 VGS=4.5V ID=16A 2 1.2 1 0.8 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=18A 1.0E+01 15 1.0E+00 10 IS (A) RDS(ON) (mΩ ) 25°C 125°C 125°C 5 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 25°C 1.0E-04 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4498E (KO4498E) ■ Typical Characterisitics 3500 10 VDS=15V ID=18A 3000 Capacitance (pF) 8 VGS (Volts) 6 4 2 Ciss 2500 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 35 40 0 45 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 10000 TA=25°C 10µs RDS(ON) limited 1000 100µs 1.0 1ms 0.1 10s Power (W) ID (Amps) 10.0 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 10 10ms TJ(Max)=150°C TA=25°C 100 10 DC 0.0 0.01 0.1 1 10. 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000 30