SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO4292 (KO4292)
SOP-8
■ Features
● VDS (V) = 100V
● ID = 8 A (VGS = 10V)
● RDS(ON) < 23mΩ (VGS = 10V)
1.50 0.15
0.21 -0.02
+0.04
● RDS(ON) < 33mΩ (VGS = 4.5V)
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
VSPIKE
120
VDS Spike
@ 10us
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
L=0.1mH
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
ID
6.2
32
IAS
15
EAS
11
RthJA
V
8
IDM
PD
Unit
3.1
2
A
mJ
W
40
75
RthJL
24
TJ
150
Tstg
-55 to 150
℃/W
℃
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MOSFET
SMD Type
N-Channel MOSFET
AO4292 (KO4292)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
ID=250 uA, VGS=0V
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250uA
Static Drain-Source On-Resistance
RDS(On)
Min
Typ
100
VDS=100V, VGS=0V
1
VDS=100V, VGS=0V, TJ=55℃
5
VGS=10V, ID=8A
1.6
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
VDS=5V, ID=8A
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=8A
0.5
1.7
16.5
25
7
12
4.5
Turn-On DelayTime
td(on)
7
VGS=10V, VDS=50V, RL=6.25Ω,
RGEN=3Ω
trr
Qrr
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
Marking
2
4292
KC****
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nC
3
ns
20
IF= 8A, dI/dt= 500A/us
20
90
IS=1A,VGS=0V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
■ Marking
Ω
3
tf
Body Diode Reverse Recovery Charge
pF
7
2.5
Body Diode Reverse Recovery Time
mΩ
S
95
Qgd
Turn-Off Fall Time
V
1190
VGS=0V, VDS=50V, f=1MHz
Gate Drain Charge
tr
2.7
30
Qgs
td(off)
nA
33
Gate Source Charge
Turn-Off DelayTime
±100
42
TJ=125℃
Qg
Turn-On Rise Time
uA
23
VGS=4.5V, ID=6A
gFS
Unit
V
VGS=10V, ID=8A
Forward Transconductance
Max
nC
4
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO4292 (KO4292)
■ Typical Characterisitics
40
10V
40
4.5V
30
30
3.5V
ID(A)
ID (A)
VDS=5V
4V
20
20
125°C
10
10
25°C
VGS=3V
0
0
0
1
2
3
4
1
5
2
30
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
4
5
2.2
VGS=4.5V
25
20
VGS=10V
15
2
VGS=10V
ID=8A
1.8
1.6
1.4
VGS=4.5V
ID=6A
1.2
1
0.8
10
0
5
10
15
0
20
25
60
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E+01
ID=8A
1.0E+00
50
1.0E-01
125°C
40
IS (A)
RDS(ON) (mΩ
Ω)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.0E-02
125°C
30
1.0E-03
25°C
20
1.0E-04
25°C
10
1.0E-05
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
N-Channel MOSFET
AO4292 (KO4292)
■ Typical Characterisitics
10
1600
VDS=50V
ID=8A
8
1400
Capacitance (pF)
6
VGS (Volts)
Ciss
1200
4
2
1000
800
600
Coss
400
200
0
Crss
0
0
4
8
12
16
20
0
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
Power (W)
100µs
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
DC
0.0
0.01
0.1
1
10
VDS (Volts)
100
.
1000
100
10
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 4.5V
1
100
1
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
80
TJ(Max)=150°C
TA=25°C
10µs
10µs
RDS(ON)
limited
10.0
ID (Amps)
60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
Zθ JA Normalized Transient
Thermal Resistance
40
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
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10
100