SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO4240 (KO4240)
SOP-8
■ Features
● VDS (V) = 40V
● ID = 24 A (VGS = 10V)
● RDS(ON) < 3.3mΩ (VGS = 10V)
1.50 0.15
0.21 -0.02
+0.04
● RDS(ON) < 4.3mΩ (VGS = 4.5V)
1
2
3
4
D
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TA=25℃
TA=70℃
ID
19
IDM
170
Avalanche Current
IAS
75
EAS
281
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
L=0.1mH
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
PD
RthJA
V
24
Pulsed Drain Current
Avalanche energy
Unit
3.1
2
A
mJ
W
40
75
RthJL
24
TJ
150
Tstg
-55 to 150
℃/W
℃
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MOSFET
SMD Type
N-Channel MOSFET
AO4240 (KO4240)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
ID=250 uA, VGS=0V
Min
Typ
40
1
VDS=40V, VGS=0V, TJ=55℃
5
VDS=0V, VGS=±20V
VDS=VGS , ID=250uA
RDS(On)
VGS=10V, ID=20A
1.2
On State Drain Current
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
VGS=10V, VDS=5V
69
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
0.5
1.5
62
87
28
40
10.5
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
tf
IS
Diode Forward Voltage
VSD
Marking
2
4240
KC****
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Ω
nC
11.5
ns
42
21
IF= 20A, dI/dt= 500A/us
23
74
IS=1A,VGS=0V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
■ Marking
pF
1170
9
Maximum Body-Diode Continuous Current
S
4245
VGS=0V, VDS=20V, f=1MHz
8
trr
mΩ
A
Qgd
Qrr
V
90
td(on)
Body Diode Reverse Recovery Charge
2.3
170
VDS=5V, ID=20A
Gate Drain Charge
Body Diode Reverse Recovery Time
nA
4.3
Turn-On DelayTime
Turn-Off Fall Time
±100
4.9
TJ=125℃
Qg
Qgs
uA
3.3
VGS=4.5V, ID=20A
Forward Transconductance
Unit
V
VDS=40V, VGS=0V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Max
nC
4.5
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO4240 (KO4240)
■ Typical Characterisitics
100
100
VDS=5V
4.5V
80
80
10V
60
ID(A)
ID (A)
60
3V
40
125°C
40
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.8
5
4
VGS=4.5V
3
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V10
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
8
50
75
100
175
125°C
1.0E+00
IS (A)
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
150
1.0E+01
125°C
2
125
1.0E+02
ID=20A
4
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
6
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
N-Channel MOSFET
AO4240 (KO4240)
■ Typical Characterisitics
10
6000
VDS=20V
ID=20A
5000
Capacitance (pF)
8
VGS (Volts)
6
4
2
4000
3000
Coss
2000
1000
0
Crss
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
1000.0
TA=100°C
TA=25°C
100
TA=150°C
TA=125°C
10
100.0
ID (Amps)
IAR (A) Peak Avalanche Current
Ciss
RDS(ON)
limited
10µs
10.0
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
10s
0.0
1
1
0.01
10
100
1000
Time in avalanche, tA (µ
µs)
.
Figure 12: Single Pulse Avalanche capability
(Note C)
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4
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10
1000
MOSFET
SMD Type
N-Channel MOSFET
AO4240 (KO4240)
■ Typical Characterisitics
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
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