MOSFET SMD Type N-Channel MOSFET AO3442-HF (KO3442-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 630mΩ (VGS = 10V) 1 ● RDS(ON) ＜ 720mΩ (VGS = 4.5V) 0.55 ● ID = 1 A (VGS = 10V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) = 100V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 1.1 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 0-0.1 +0.1 0.68 -0.1 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA RthJC Unit V 1 0.8 A 4 1.4 0.9 W 90 125 ℃/W 80 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3442-HF (KO3442-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 100 1 VDS=100 V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250μA RDS(On) VGS=10V, ID=1A 1.7 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=10V, VDS=5V VDS=5V, ID=1A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=1A 2.5 7.5 2.8 6 1.5 3 0.4 5 VGS=10V, VDS=50V, RL=50Ω,RG=3Ω tf trr Qrr Maximum Body-Diode Continuous Current IS VSD Marking BC** F www.kexin.com.cn Ω nC 4 ns 12 5 IF= 5.6A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking pF 5 td(on) Body Diode Reverse Recovery Time S 13 Turn-On DelayTime Body Diode Reverse Recovery Charge mΩ 100 VGS=0V, VDS=50V, f=1MHz 0.8 Diode Forward Voltage 2 2.8 Qgd Turn-Off Fall Time V A Gate Drain Charge tr 2.9 720 Qgs td(off) nA 4 Gate Source Charge Turn-Off DelayTime ±100 1200 TJ=125℃ Qg Turn-On Rise Time uA 630 VGS=4.5V, ID=0.8A On state drain current Unit V VDS=100 V, VGS=0V VGS=10V, ID=1A Static Drain-Source On-Resistance Max 52 60 nC 1 A 1.2 V MOSFET SMD Type N-Channel MOSFET AO3442-HF (KO3442-HF) ■ Typical Characterisitics 3 5 VDS=5V 10V 6V 2.5 5V 4 4.5V 2 ID (A) ID(A) 3 2 1.5 3.5V 1 1 125°C 25°C 0.5 VGS=3.0V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1200 Normalized On-Resistance 2.4 1000 VGS=4.5V RDS(ON) (mΩ Ω) 800 600 VGS=10V 400 200 2.2 VGS=10V ID=1A 2 1.8 1.6 1.4 1.2 VGS=4.5V ID=0.8A 1 0.8 0 0 0.5 0 1 1.5 2 2.5 3 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1200 ID=1A 900 1.0E+00 125°C 1.0E-01 IS (A) Ω) RDS(ON) (mΩ 1 600 1.0E-02 25°C 1.0E-03 25°C 300 125°C 1.0E-04 1.0E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3442-HF (KO3442-HF) ■ Typical Characterisitics 10 160 VDS=50V ID=1A 140 120 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 100 80 60 40 2 Crss Coss 20 0 0 0 0.5 1 1.5 2 2.5 Qg (nC) Figure 7: Gate-Charge Characteristics 3 0 1.0 1000 100µs 1ms 0.1 DC TJ(Max)=150°C TA=25°C 0.01 0.1 1 10 VDS (Volts) Power (W) RDS(ON) limited 0.0 10 1 100 10ms 10 10s 1 100 1E-05 1000 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 1E-05 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 100 TA=25°C 10µs ID (Amps) 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 10000 10.0 Zθ JA Normalized Transient Thermal Resistance 20 www.kexin.com.cn 100 1000