InSb Hall Element HW-104A Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. •High-sensitivity InSb Hall element. •SMT package with inserting pin. •Shipped in bulk(500pcs per pack). Note : It is requested to read and accept "IMPORTANT NOTICE". •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range Tstg. –40 to +125 ˚C Const. Current Drive •Input Current Derating Curve •Electrical Characteristics(Ta=25˚C) Symbol Output Hall Voltage VH Conditions Min. Const. Voltage Drive B=50mT, Vc=IV Typ. Max. Unit 196 Input Current(mA) Item Input Resistance Rin : 240 to 550 20 mV Input Resistance Rin B=0mT, Ic=0.1mA 240 550 Output Resistance Rout B=0mT, Ic=0.1mA 240 550 Offset Voltage Vos B=0mT, Vc=IV –7 +7 mV Temp. Coefficient of VH VH B=50mT, Ic=5mA –1.8 %/˚C Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA –1.8 %/˚C 10 0 – 40 – 20 0 20 40 60 80 Ambient Temperature.(˚C) 100 120 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. •Input Voltage Derating Curve Dielectric Strength 100V D.C 1.0 M Input Voltage(V) 1 3) – VH (T2) X 100 2. VH = VH (T1) X VH (T (T3 – T2) 1 3) – Rin (T2) X 100 3. Rin = Rin (T1) X Rin (T (T – T ) 3 Input Resistance Rin : 240 to 550 2.0 Notes : 1. VH = VHM – Vos (VHM:meter indication) 2 T1 = 20˚C, T2 = 0˚C, T3 = 40˚C •Dimensional Drawing (mm) 1.0 2.9±0.2 0.5 1.55±0.1 0.4 0.5 5˚ D1±0.1 15˚ 2 0 0.5±0.1 Output 0 to 0.1 1(±) (±) Input 2 (±) 0.1 Pinning 0.35 – 20 0 20 40 60 80 Ambient Temperature.(˚C) 100 120 Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 1.25 1.35 2.6±0.1 N – 40 0.05 3 1.9 1 2.9±0.1 4 3 4(±) 15 HW-104A a •Characteristic Curves Rin-T VH-B 2000 600.0 Ic const Vc const 500.0 1600 Output VoltageVH(mV) Input Resistance:Rin( ) 1800 1400 1200 1000 800 600 400 Ic = 5 (mA) Vc = 1 (V) Ta = 25 (˚C) 400.0 Ic 300.0 c Vin 200.0 100.0 200 0 –50 0 50 100 Ambient Temperature(˚C) 0.0 0 150 VH-T 40 50 1200 Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 1500 Ic 1250 Output Voltage:VH(mV) Ic const Vc const 1750 Output Voltage:VH(mV) 20 30 Magnetic Flux Density B (mT) VH-Vc, VH-Ic 2000 1000 750 500 Vin Ic const Vc const 1000 Ic B = 50 (mT) Ta = 25 (˚C) 800 f 600 Vin 400 200 250 0 –50 0 50 100 Ambient Temperature(˚C) 0 0.0 150 VOS-T 5 10 15 0.5 1.0 Ic (mA) Input Current Vc (V) Input Voltage 1.5 20 Ic:(mA) 2.0 Vc:(V) VOS-Vc, VOS-Ic 40 20 Ic const Vc const Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) 30 Ic Ic const Vc const 18 Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) 10 20 10 16 i Ic B = 0 (mT) Ta = 25 (˚C) 14 12 10 8 Vin 6 4 Vin 2 0 –50 0 50 100 Ambient Temperature(˚C) 0 0.0 150 *Magnetic Flux Density 1(mT)=10(G) 5 10 15 20 Ic:(mA) 0.5 1.0 Ic (mA) Input Current Vc (V) Input Voltage 1.5 2.0 Vc:(V) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 16