Transistors SMD Type NPN Transistors 2SC3734 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 ● Complementary to 2SA1461 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● High Speed: tstg < 200ns 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage Unit V VEBO 6 Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 200 mW TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 30V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V Collector-emitter saturation voltage *1 VCE(sat) IC=50 mA, IB=5mA 0.12 0.3 Base - emitter saturation voltage *1 VBE(sat) IC=50 mA, IB=5mA 0.8 0.95 hFE(1) VCE= 1V, IC= 10mA 75 200 300 hFE(2) VCE= 1V, IC= 100mA 25 80 DC current gain *1 Turn-on time ton Storage time tstg Turn-off time toff Collector output capacitance Cob Transition frequency fT Unit uA V 70 VCC=3V,IC=10mA,IB1=-IB2=1mA 100 200 ns 250 VCB= 5V, IE= 0,f=1MHz VCE= 20V, IE= -10mA 3 300 510 4 pF MHz *1 : Pulse :PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SC3734-B22 2SC3734-B23 2SC3734-B24 Range 75-150 100-200 150-300 Marking B22 B23 B24 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3734 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors ■ Typical Characterisitics 2SC3734 www.kexin.com.cn 3