Transistors SMD Type PNP Transistors 2SB1115 ■ Features 1.70 0.1 ● Low VCE(sat) VCE(sat)=-0.2V at 1A ● Complementary to 2SD1615 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1 Collector current -Pulse ICP -2 (Note.1) Collector Power Dissipation PC 2 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 -6 Typ Max V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-1 A, IB=-50mA -0.2 -0.3 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-1 A, IB=-50mA -0.9 -1.2 Base - emitter voltage DC current gain (Note.1) VBE (Note.1) hFE Collector output capacitance Cob Transition frequency uA V VCE= -2V, IC= -50 mA -0.6 VCE= -2V, IC= -100 mA 135 340 VCE= -2V, IC= -1 A 100 200 25 pF 80 120 MHz VCB = –10V, IE = 0, f = 1MHz VCE= -2V, IC= -100mA fT Unit -0.7 600 Note.1: Pulse: PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SB1115-M 2SB1115-L 2SB1115-K Range 135-270 200-400 300-600 Marking YM YL YK www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1115 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB1115 ■ Typical Characterisitics www.kexin.com.cn 3