Transistors SMD Type NPN Transistors 2SD780 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● Complimentary to 2SB736 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● High DC current gain 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 300 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range +0.1 0.38 -0.1 2.Emitter 3.collector Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 60 5 Typ Max V Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=300 mA, IB=30mA Base - emitter saturation voltage (Note.1) VBE(sat) IC=300 mA, IB=30mA Base - emitter voltage (Note.1) DC current gain (Note.1) Collector output capacitance Transition frequency 0.15 0.6 1.2 VBE VCE= 6V, IC=10mA 600 645 700 hFE(1) VCE= 1V, IC= 50mA 110 200 400 hFE(2) VCE= 2V, IC= 300mA 30 Cob VCB= 6V, IE=0,f=1MHz VCE= 6V, IE= -10mA fT Unit uA V mV 7 pF 140 MHz Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SD780-DW1 2SD780-DW2 2SD780-DW3 2SD780-DW4 2SD780-DW5 Range 110-180 135-220 170-270 200-320 250-400 Marking DW1 DW2 DW3 DW4 DW5 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD780 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD780 ■ Typical Characterisitics www.kexin.com.cn 3