SMD Type Transistors

Transistors
SMD Type
NPN Transistors
2SD780
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
1
0.55
● Complimentary to 2SB736
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● High DC current gain
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
60
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
300
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature Range
+0.1
0.38 -0.1
2.Emitter
3.collector
Unit
V
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
60
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
60
5
Typ
Max
V
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 50 V , IE= 0
0.1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
Collector-emitter saturation voltage
(Note.1)
VCE(sat)
IC=300 mA, IB=30mA
Base - emitter saturation voltage
(Note.1)
VBE(sat)
IC=300 mA, IB=30mA
Base - emitter voltage
(Note.1)
DC current gain
(Note.1)
Collector output capacitance
Transition frequency
0.15
0.6
1.2
VBE
VCE= 6V, IC=10mA
600
645
700
hFE(1)
VCE= 1V, IC= 50mA
110
200
400
hFE(2)
VCE= 2V, IC= 300mA
30
Cob
VCB= 6V, IE=0,f=1MHz
VCE= 6V, IE= -10mA
fT
Unit
uA
V
mV
7
pF
140
MHz
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
2SD780-DW1
2SD780-DW2
2SD780-DW3
2SD780-DW4
2SD780-DW5
Range
110-180
135-220
170-270
200-320
250-400
Marking
DW1
DW2
DW3
DW4
DW5
www.kexin.com.cn
1
Transistors
SMD Type
NPN Transistors
2SD780
■ Typical Characterisitics
2
www.kexin.com.cn
Transistors
SMD Type
NPN Transistors
2SD780
■ Typical Characterisitics
www.kexin.com.cn
3