Transistors SMD Type NPN Transistors 2SC4504 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.3A ● Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 30 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 0.3 Collector Current - Pulse ICP 0.6 Collector Power Dissipation 0.5 PC (Note.1) TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range 1.3 Unit V A W ℃ Note.1 : Mounted on ceramic substrate of 250mm2X0.8mm ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 Emitter cut-off current IEBO VEB= 2V , IC=0 Typ Max V 0.1 5 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.5 Base - emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 DC current gain hFE Collector output capacitance Cob Reverse Transfer capacitance Cre Transition frequency fT VCE= 5V, IC= 50mA 40 VCE= 5V, IC= 300mA 20 VCB= 10V,f=1MHz VCE= 5V, IC=50mA Unit uA V 200 2.9 2.6 2.2 pF GHz ■ Classification of hfe(1) Type 2SC4504-C 2SC4504-D 2SC4504-E Range 40-80 60-120 100-200 Marking CM C CM D CM E www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC4504 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SC4504 ■ Typical Characterisitics www.kexin.com.cn 3