Transistors SMD Type PNP Transistors 2SA1245 SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Collector Emitter Voltage VCEO=-8V 1 0.55 ● Collector Current Capability IC=-30mA +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -15 Collector - Emitter Voltage VCEO -8 Emitter - Base Voltage VEBO -2 Collector Current - Continuous IC -30 Base Current IB -15 Collector Power Dissipation PC 150 Junction Temperature TJ 125 Tstg -55 to 125 Storage Temperature range Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -15 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -8 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -2 Collector-base cut-off current ICBO VCB= -10 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -1V , IC=0 -0.1 V Collector-emitter saturation voltage VCE(sat) IC=-30 mA, IB=-3mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-30 mA, IB=-3mA -1.2 hFE VCE= -5V, IC= -10mA DC current gain |S2le|2 Insertion gain Noise figure NF Collector output capacitance Cob Reseve transfer capacitance Cre Transition frequency fT VCE= -5V, IC= -10mA,f=500MHz 14 9.5 VCE= -5V, IC= -3mA,f=500MHz 2.5 VCB= -5V, IE=0,f=1MHz VCE= -5V, IC= -10mA uA V 20 VCE= -5V, IC= -10mA,f=1GHz VCE= -5V, IC= -3mA,f=1GHz Unit dB 3 0.75 0.6 4 pF GHz ■ Marking Marking MD www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1245 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SA1245 ■ Typical Characterisitics www.kexin.com.cn 3