Transistors SMD Type NPN Transistors 2SD2100 1.70 0.1 ■ Features ● Low saturation voltage Collector ● Large current cappacity ● Complementary to 2SB1397 0.42 0.1 0.46 0.1 Base 1.Base RBE 2.Collector 3.Emitter Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Collector Power Dissipation PC 1.3 Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 20 6 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 Emitter cut-off current IEBO VEB= 5V , IC=0 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50mA Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50mA DC current gain hFE Diode Forward voltage VF Base to emitter resistance RBE Collector output capacitance Cob Transition frequency fT Typ Max V 1 0.1 0.25 0.5 1.5 VCE= 2V, IC= 500mA 70 VCE= 2V, IC= 2 A 50 Unit IF=500mA 1.5 1.6 uA V V kΩ VCB= 10V, IE= 0,f=1MHz 25 pF VCE= 2V, IC= 500 mA 200 MHz ■ Marking Marking DP www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD2100 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD2100 ■ Typical Characterisitics www.kexin.com.cn 3