SMD Type Diodes

Diodes
SMD Type
Switching Diodes
BAS16U
(KAS16U)
( SOT-23-6 )
Unit: mm
+0.1
6
5
4
1
2
3
● Pb-free (RoHS compliant) package
● Qualified according AEC Q101
0.55
+0.2
1.6 -0.1
● For high-speed switching applications
+0.2
2.8 -0.1
■ Features
0.4
0.4 -0.1
+0.02
0.15 -0.02
+0.01
-0.01
0-0.1
+0.1
0.68 -0.1
+0.1
1.1 -0.1
+0.2
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Peak Reverse Voltage
VRM
85
Diode Reverse Voltage
VR
80
Forward Current
IF
200
Non-Repetitive Peak Surge Forward Current @ t=1us
Power Dissipation
Thermal Resistance Junction to Soldering point
Junction Temperature
Storage Temperature range
Unit
V
mA
IFSM
4.5
A
PD
250
mW
RθJS
150
℃/W
TJ
150
Tstg
-65 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Symbol
VR
VF
Forward voltage
Forward recovery voltage
VRF
Test Conditions
IR= 100 uA
Min
Typ
Max
Unit
85
IF= 1 mA
0.715
IF= 10mA
0.855
IF= 50 mA
1
IF= 100 mA
1.2
IF= 150 mA
1.25
IF= 10 mA , tP=20ns
1.75
VR=75 V
0.1
V
Reverse voltage leakage current
IR
VR=25 V ,Ta = 25℃
30
uA
VR=75 V ,Ta = 25℃
50
Capacitance between terminals
CT
VR= 0 V, f= 1 MHz
2
pF
Reverse recovery time
trr
IF=IR=10mA,Irr=0.1xIR, RL=100Ω
4
ns
■ Marking
Marking
A6s
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Diodes
SMD Type
Switching Diodes
BAS16U
(KAS16U)
■ Typical Characterisitics
Reverse current IR = ƒ (TA)
Forward Voltage VF = ƒ (TA)
VR = Parameter
IF = Parameter
10
5
1.0
nA
V
VF
10
ΙF = 100 mA
4
IR
10 mA
10
3
1 mA
0.5
0.1 mA
70 V
25 V
10
2
10
1
0
25
50
75
100
°C
0
150
TA
0
50
100
C
150
TA
Forward current IF = ƒ (VF)
Forward current IF = ƒ (T S)
TA = 25°C
250
150
mA
ΙF mA
200
175
IF
100
typ
max
150
125
100
50
75
50
25
0
0
0.5
1.0
V
VF
2
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1.5
0
0
15
30
45
60
75
90
105 120 °C 150
TS
Diodes
SMD Type
Switching Diodes
BAS16U
(KAS16U)
■ Typical Characterisitics
Permissible Puls Load
RthJS = ƒ (tp)
Permissible Pulse Load
IFmax / I FDC = ƒ (t p)
10
3
10
2
10
IFmax / IFDC
R thJS
K/W
2
10
1
10
0
10
10
1
10
0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
tp
■ Test circuit for reverse recovery time
D.U.T.
ΙF
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, R i = 50Ω
Oscillograph
Oscillograph: R = 50Ω, tr = 0.35ns,
C = 0.05pF
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