Diodes SMD Type Switching Diodes BAS16U (KAS16U) ( SOT-23-6 ) Unit: mm +0.1 6 5 4 1 2 3 ● Pb-free (RoHS compliant) package ● Qualified according AEC Q101 0.55 +0.2 1.6 -0.1 ● For high-speed switching applications +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Peak Reverse Voltage VRM 85 Diode Reverse Voltage VR 80 Forward Current IF 200 Non-Repetitive Peak Surge Forward Current @ t=1us Power Dissipation Thermal Resistance Junction to Soldering point Junction Temperature Storage Temperature range Unit V mA IFSM 4.5 A PD 250 mW RθJS 150 ℃/W TJ 150 Tstg -65 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Symbol VR VF Forward voltage Forward recovery voltage VRF Test Conditions IR= 100 uA Min Typ Max Unit 85 IF= 1 mA 0.715 IF= 10mA 0.855 IF= 50 mA 1 IF= 100 mA 1.2 IF= 150 mA 1.25 IF= 10 mA , tP=20ns 1.75 VR=75 V 0.1 V Reverse voltage leakage current IR VR=25 V ,Ta = 25℃ 30 uA VR=75 V ,Ta = 25℃ 50 Capacitance between terminals CT VR= 0 V, f= 1 MHz 2 pF Reverse recovery time trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω 4 ns ■ Marking Marking A6s www.kexin.com.cn 1 Diodes SMD Type Switching Diodes BAS16U (KAS16U) ■ Typical Characterisitics Reverse current IR = ƒ (TA) Forward Voltage VF = ƒ (TA) VR = Parameter IF = Parameter 10 5 1.0 nA V VF 10 ΙF = 100 mA 4 IR 10 mA 10 3 1 mA 0.5 0.1 mA 70 V 25 V 10 2 10 1 0 25 50 75 100 °C 0 150 TA 0 50 100 C 150 TA Forward current IF = ƒ (VF) Forward current IF = ƒ (T S) TA = 25°C 250 150 mA ΙF mA 200 175 IF 100 typ max 150 125 100 50 75 50 25 0 0 0.5 1.0 V VF 2 www.kexin.com.cn 1.5 0 0 15 30 45 60 75 90 105 120 °C 150 TS Diodes SMD Type Switching Diodes BAS16U (KAS16U) ■ Typical Characterisitics Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 3 10 2 10 IFmax / IFDC R thJS K/W 2 10 1 10 0 10 10 1 10 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 0 tp ■ Test circuit for reverse recovery time D.U.T. ΙF Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, R i = 50Ω Oscillograph Oscillograph: R = 50Ω, tr = 0.35ns, C = 0.05pF www.kexin.com.cn 3