BAV 99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Connected in series 6 • Internal (galvanic) isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAV 99S A7s 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363 Q62702-A1277 Package Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs I FS 4.5 A Total power dissipation, T S = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg V 65 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 530 RthJS ≤ 260 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Apr-27-1998 1998-11-01 BAV 99S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 - - DC characteristics V(BR) Breakdown voltage V I (BR) = 100 µA VF Forward voltage mV I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 150 mA - - 1250 - - 2.5 IR Reverse current µA VR = 70 V IR Reverse current nA VR = 25 V, TA = 150 °C - - 30 VR = 70 V, TA = 150 °C - - 50 CD - - 1.5 pF t rr - - 6 ns AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Apr-27-1998 1998-11-01 BAV 99S Forward current IF = f (TA*;TS) Forward current IF = f V F) * Package mounted on epoxy TA = 25°C 300 BAV 99 150 1 EHB00076 Ι F mA mA IF 200 100 TS typ 150 max TA 100 50 50 0 0 20 40 60 80 120 °C 100 0 150 0 0.5 1.0 V TA,TS 1.5 VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC K/W RthJS 10 2 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Apr-27-1998 1998-11-01 BAV 99S Forward voltage V F = f (TA) 1.0 VF Reverse current IR = f (TA) BAV 99 V EHB00078 ΙR Ι F = 100 mA 10 5 nA BAV 99 EHB00075 V R = 70 V 10 4 0.5 max. 5 10 mA 1 mA 10 3 0.1 mA 5 70V 25 V typ. 10 2 5 0 0 50 Semiconductor Group Semiconductor Group 100 C TA 10 1 150 0 50 100 C 150 TA 44 Apr-27-1998 1998-11-01