BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage VRM 400 Forward current IF 1 Peak forward current I FM 1 Surge forward current, t = 1 µs I FS 10 Total power dissipation, T S ≤ 110 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature T stg Values Unit V A - 65 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 95 RthJS ≤ 40 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jul-27-1998 1998-11-01 BAW 78M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 400 - - IF = 1 A - - 1.6 IF = 2 A - - 2 IR - - 1 IR - - 50 CD - 10 - pF trr - 1 - ns DC characteristics V(BR) Breakdown voltage V I (BR) = 100 µA VF Forward voltage Reverse current µA VR = 400 V Reverse current VR = 400 V, T A = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω, measured at IR = 20mA Test circuit for reverse recovery time DUT tr tp 10% ΙF t t rr ΙF t Oscillograph Ι R = 20 mA 90% EHN00020 VR Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f (TA*;TS) * Package mounted on epoxy 1200 mA TS IF 800 TA 600 400 200 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 2 IFmax / IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f V F) Reverse current IR = f (TA) T A = 25°C 10 1 ΙF BAS 78A...D EHB00047 10 5 BAS 78A...D EHB00048 nA A ΙR 10 0 10 max 4 5 10 -1 10 typ 3 5 10 2 5 10 -2 10 -3 0 1 V 10 1 2 0 100 C 150 TA VF Semiconductor Group Semiconductor Group 50 44 Jul-27-1998 1998-11-01