MOSFET SMD Type N-Channel MOSFET AO4492 (KO4492) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 14 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 9.5mΩ (VGS = 10V) ● RDS(ON) ＜ 14mΩ (VGS = 4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 11.4 100 IAS,IAR 20 EAS,EAR 20 RthJA V 14 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4492 (KO4492) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ 30 ID=250μA, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=14A 1.2 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=10V, VDS=5V VDS=5V, ID=14A 43 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=14A 0.4 1.6 14.8 18 7.1 9 2.2 td(on) 5 VGS=10V, VDS=15V, RL=1.05Ω, RGEN=3Ω trr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4492 KC**** www.kexin.com.cn nC 3 ns 18 IF= 14A, dI/dt= 500A/us 11 23 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking Ω 3 tf Qrr pF 77 Turn-On DelayTime Body Diode Reverse Recovery Charge S 240 3.1 Body Diode Reverse Recovery Time mΩ 770 VGS=0V, VDS=15V, f=1MHz Qgd Turn-Off Fall Time V A Gate Drain Charge tr 2.2 14 Qgs td(off) nA 100 Gate Source Charge Turn-Off DelayTime ±100 13 TJ=125℃ Qg Turn-On Rise Time uA 9.5 VGS=4.5V, ID=11A On State Drain Current Unit V VDS=30V, VGS=0V VGS=10V, ID=14A Static Drain-Source On-Resistance Max nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO4492 (KO4492) ■ Typical Characterisitics 100 10V 60 5V 80 7V 40 4V ID(A) ID (A) 60 40 VDS=5V 50 4.5V 3.5V 30 20 20 125°C 10 VGS=3.0V 25°C 0 0 0 1 2 3 4 0 5 14 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 1.8 12 VGS=4.5V 10 8 VGS=10V 6 VGS=10V ID=14A 1.6 1.4 1.2 VGS=4.5V ID=11A 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 30 1.0E+02 ID=14A 25 1.0E+01 1.0E+00 20 125°C 15 10 IS (A) RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4492 (KO4492) ■ Typical Characterisitics 1200 10 VDS=15V ID=14A 8 1000 Capacitance (pF) Ciss VGS (Volts) 6 4 2 600 Coss 400 200 0 Crss 0 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics 100 TA=25°C 16 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 TA=100°C 80 100.0 60 TA=150°C TA=125°C 40 ID (Amps) IAR (A) Peak Avalanche Current 800 10.0 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 20 10µs 100µs RDS(ON) limited 10s DC 0.0 0 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) . Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type N-Channel MOSFET AO4492 (KO4492) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5