MOSFET SMD Type Dual P-Channel MOSFET AO4801 (KO4801) SOP-8 Unit:mm ■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 48mΩ (VGS = -10V) ● RDS(ON) ＜ 57mΩ (VGS = -4.5V) ● RDS(ON) ＜ 80mΩ (VGS = -2.5V) 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D2 D1 G2 G1 S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.3mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID -4 -28 IAS, IAR -11 EAS, EAR 18 RthJA RthJL V -5 IDM PD Unit 2 1.3 A mJ W 62.5 90 ℃/W 40 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual P-Channel MOSFET AO4801 (KO4801) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS , ID=-250uA Gate Threshold Voltage ID=-250μA, VGS=0V Min Typ -30 VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 RDS(On) VGS=-10V, ID=-5A -0.5 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (4.5V) Qg Gate Source Charge Qgs VGS=-4.5V, ID=-3.5A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-5A 18 55 VGS=0V, VDS=0V, f=1MHz 4 12 VGS=-4.5V, VDS=-15V, ID=-5A td(off) VSD VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω 3.5 Marking 2 4801 KA**** www.kexin.com.cn ns 41 9 IF= -5A, dI/dt= 100A/us 11 3.5 IS=-1A,VGS=0V Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking nC 1.5 Turn-Off DelayTime Diode Forward Voltage Ω 7 tr IS pF 80 Turn-On Rise Time Qrr S 645 VGS=0V, VDS=-15V, f=1MHz 6.5 Maximum Body-Diode Continuous Current mΩ A 2.5 Body Diode Reverse Recovery Charge V 80 Qgd trr -1.3 -28 td(on) Body Diode Reverse Recovery Time nA 57 Turn-On DelayTime tf ±100 60 Gate Drain Charge Turn-Off Fall Time uA 48 TJ=125℃ VGS=-2.5V, ID=-2.5A On State Drain Current Unit V VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max nC -2.5 A -1 V MOSFET SMD Type Dual P-Channel MOSFET AO4801 (KO4801) ■ Typical Characterisitics 30 20 -10V 25 VDS=-5V -4.5V 15 -ID(A) -ID (A) 15 -3V 20 -2.5V 125°C 10 10 25°C 5 5 VGS=-2V 0 0 0 1 2 3 4 0 5 1 1.5 90 Normalized On-Resistance 1.8 VGS=-2.5V 70 VGS=-4.5V 50 30 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ ) 0.5 VGS=-10V VGS=-4.5V ID=-3.5A 1.6 VGS=-10V ID=-5A 1.4 VGS17 =-2.5V 5 ID=-2.5A 1.2 1 0.8 10 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 100 1.0E+01 ID=-5A 1.0E+00 125°C 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 80 60 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type Dual P-Channel MOSFET AO4801 (KO4801) ■ Typical Characterisitics 1200 5 VDS=-15V ID=-5A 1000 Ciss Capacitance (pF) -VGS (Volts) 4 3 2 800 600 400 1 0 Crss 0 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 100.0 RDS(ON) limited 10µs 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 . 1 0.00001 100 -VDS (Volts) 0.001 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 10 1s 10s DC 0.0 30 TJ(Max)=150°C TA=25°C 1000 100µs Zθ JA Normalized Transient Thermal Resistance 5 10000 10.0 -ID (Amps) Coss 200 www.kexin.com.cn 100 1000