MOSFET SMD Type N-Channel MOSFET AO4568 (KO4568) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 11.5mΩ (VGS = 10V) ● RDS(ON) ＜ 17.5mΩ (VGS = 4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 VSPIKE 36 VDS Spike Continuous Drain Current 100ns TA=25℃ TA=70℃ ID 9.4 IDM 48 Avalanche Current IAS 13 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State EAS PD RthJA RthJL V 12 Pulsed Drain Current Avalanche Energy Unit 8 2.5 1.6 A mJ W 50 85 ℃/W 30 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4568 (KO4568) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ 30 Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=12A 1.4 gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Qgs Gate Drain Charge Qgd VDS=5V, ID=12A 40 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=12A 0.7 2.3 9 15 4.4 10 1.4 5 Turn-Off DelayTime td(off) Qrr Maximum Body-Diode Continuous Current Diode Forward Voltage VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 2.5 IF= 12A, dI/dt= 500A/us 8.6 10.5 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking Marking 2 4568 KC**** www.kexin.com.cn nC ns 17.5 IS VSD Ω 1.9 2.5 Body Diode Reverse Recovery Charge pF 30 VGS=0V, VDS=0V, f=1MHz tr tf mΩ S 230 td(on) trr V 600 Turn-On DelayTime Body Diode Reverse Recovery Time 2.2 17.5 Turn-On Rise Time Turn-Off Fall Time nA 11.5 Qg Gate Source Charge uA ±100 16.5 TJ=125℃ VGS=4.5V, ID=10A Forward Transconductance Unit V VGS=10V, ID=12A Input Capacitance Max nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO4568 (KO4568) ■ Typical Characterisitics 50 10V 50 4.5V VDS=5V 4V 40 40 6V 30 ID(A) ID (A) 30 3.5V 20 10 0 10 VGS=3V 0 1 2 3 125°C 20 4 0 5 25°C 0 1 20 VGS=4.5V Normalized On-Resistance RDS(ON) (mΩ Ω) 4 5 1.6 15 10 VGS=10V 5 1.2 3 6 9 12 VGS=4.5V ID=10A 1 0.8 0 VGS=10V ID=12A 1.4 15 0 25 30 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+02 ID=12A 1.0E+01 25 1.0E+00 20 125°C IS (A) RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 0 2 15 125°C 1.0E-01 1.0E-02 10 25°C 5 0 25°C 1.0E-03 1.0E-04 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4568 (KO4568) ■ Typical Characterisitics 10 800 VDS=15V ID=12A 700 Ciss 600 Capacitance (pF) VGS (Volts) 8 6 4 2 500 400 Coss 300 200 Crss 100 0 0 2 4 6 8 0 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 TJ(Max)=150°C TA=25°C RDS(ON) limited 1ms Zθ JA Normalized Transient Thermal Resistance 10ms DC 100 50 TJ(Max)=150°C TA=25°C 0.0 0.01 1 150 100µs Power (W) ID (Amps) 10µs 1.0 10 0.1 1 10 . VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 0.001 1E-05 Single Pulse 0.0001 0.001 0.01 Ton 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 30 200 10µs 0.1 25 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 20 www.kexin.com.cn T 100 1000