JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency Cob Collector output capacitance VCE=10V, IC= 50mA, f=30MHz VCB=10V,IE=0,f=1MHz 100 MHz 15 pF CLASSIFICATION OF hFE(1) Rank Range L H J 120-200 200-350 300-400 A,May,2011 Typical Characterisitics SS8050 Static Characteristic COMMON EMITTER Ta=25℃ 0.25 800uA DC CURRENT GAIN 0.20 600uA 0.15 500uA 0.10 400uA Ta=25℃ 100 300uA 0.05 200uA IB=100uA 0.00 0.0 0.5 1.0 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 VCE 2.0 10 VBEsat 2000 Ta=25℃ 10 1000 1000 1500 100 COLLECTOR CURRENT (V) Ta=100℃ 100 1 IC —— VCE=1V 10 1.5 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC —— Ta=100℃ 700uA IC (A) 900uA COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) hFE 1000 1000uA hFE 0.30 IC (mA) IC —— Ta=25℃ Ta=100℃ β=10 β=10 1 100 1 10 COLLECTOR CURRENT VBE 1500 1000 1500 100 IC 1 10 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 1000 1500 IC (mA) —— VCB/ VEB f=1MHz IE=0/IC=0 1000 100 Ta=25℃ (pF) Ta=100℃ C 100 CAPACITANCE COLLCETOR CURRENT IC (mA) Cib Ta=25℃ 10 1 200 VCE=1V 300 400 500 600 700 BASE-EMMITER VOLTAGE fT —— 900 1 (mV) 10 REVERSE VOLTAGE IC PC 300 COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY 10 1 0.1 1000 (MHz) 1000 VBE 800 Cob 100 10 —— V 20 (V) Ta 250 200 150 100 50 VCE=10V Ta=25℃ 1 0 1 10 COLLECTOR CURRENT 100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 A,May,2011