JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TO-220-3L TRANSISTOR (NPN) FEA TURES Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A VCBO Collector-Base Voltage 40 60 TIP41B 80 TIP41C 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~+150 ℃ Unit ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol TIP41B V(BR)CBO IC= 1mA, IE=0 TIP41 40 VCEO(sus) IC= 30mA, IB=0 IE= 1mA, IC 0 V(BR)EBO = TIP41 TIP4 1A TIP41B TIP41C Collector cut-off current Emitter cut-off current DC current gain TIP41/41A TIP41B/41C 60 V 80 100 TIP41C Emitter-base breakdown voltage Unit V 80 100 TIP41B Max 60 TIP41C TIP41A Collector cut-off current Min 40 TIP41 TIP4 1A Collector-emitter breakdown voltage Test conditions ICBO ICEO VCB=40V, IE=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 5 V 0.4 mA 0.7 mA VCE= 30V, IB= 0 VCE= 60V, IB= 0 VEB=5V, IC 0 IEBO = 1 hFE(1) VCE= 4V, IC= 0.3A 30 hFE(2) VCE=4 V, IC= 3A 15 mA 75 Collector-emitter saturation voltage IC=6A, IB 0.6A VCE(sat)= 1.5 V Base-emitter voltage VCE= 4V, IC 6A VBE(on) = 2 V Transition frequency fT VCE=10V , IC=0.5A f =1MHz 3 MHZ C,Jan,2012 Typical Characterisitics Static Characteristic 500 400 —— IC COMMON EMITTER Ta=25℃ hFE 5.4mA Ta=100℃ 100 4.2mA 300 3.6mA 200 3mA 2.4mA DC CURRENT GAIN 4.8mA IC (mA) hFE 200 6mA COLLECTOR CURRENT TIP41/41A/41B/41C Ta=25℃ 1.8mA 100 1.2mA IB=0.6mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 —— VCE 10 0.1 5 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0 COMMON EMITTER VCE=4V 0.1 Ta=100℃ Ta=25℃ (mA) IC —— 1.0 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 β=10 0.01 0.1 1 10 100 COLLECTOR CURRENT IC β=10 0.2 0.1 6000 1 10 100 COLLECTOR CURRENT (mA) —— VBE IC 6000 1000 f=1MHz IE=0/IC=0 1000 Ta=25℃ (pF) (mA) Cib 1000 T= a 25 ℃ 10 CAPACITANCE C 100 T= a 10 0℃ IC 6000 (mA) —— VCB/ VEB Cob/ Cib 10000 IC 1000 COMMON EMITTER VCE=4V COLLCETOR CURRENT 6000 1000 IC 100 Cob 1 0.1 0.2 0.4 0.6 0.8 BASE-EMMITER VOLTAGE fT 100 1.0 VBE 10 0.1 1.2 1 10 REVERSE VOLTAGE (V) —— IC PC 2500 —— V 20 (V) Ta VCE=10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 10 1 50 2000 1500 1000 500 0 100 COLLECTOR CURRENT 1000 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Jan,2012 B,Nov,2011