JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-1V, IC=-100mA Collector-emitter saturation voltage 70 240 IC= -100mA, IB= -10mA VCE(sat) -0.25 V -1 V Base-emitter voltage VBE VCE=-1V,IC=-100mA Transition frequency fT VCE= -6V, IC= -20mA 200 MHz VCB=-6V,IE=0,f=1MHz 13 pF Collector output capacitance Cob CLASSIFICATION OF hFE RANK RANGE O 70-140 Y 120-240 %'HF,2011 2SA562 Typical Characteristics hFE Static Characteristic -120 —— IC 1000 COMMON EMITTER Ta=25℃ -0.80mA -0.32mA -40 -0.24mA COMMON EMITTER VCE=-1V IB=-0.08mA 10 -0.5 -1.0 VCEsat -300 -1.5 VCE -1 -100 VBEsat —— IC IC -500 (mA) —— IC -1200 β=10 β=10 -100 Ta=100℃ Ta=25℃ -1000 Ta=25℃ -800 Ta=100℃ -600 -400 -200 -1 -10 -100 COLLECTOR CURRENT IC -500 IC -1 -500 -10 -100 COLLECTOR CURRENT (mA) —— VBE Cob/ Cib 100 —— IC -500 (mA) VCB/ VEB COMMON EMITTER VCE=-1V f=1MHz IE=0 / IC=0 Ta=25℃ Cib (pF) -100 Cob Ta=100℃ CAPACITANCE C IC (mA) -10 COLLECTOR CURRENT (V) -10 COLLCETOR CURRENT Ta=25℃ 100 -0.16mA COLLECTOR-EMITTER VOLTAGE Ta=25℃ -10 -1 -200 -400 -600 -800 BASE-EMMITER VOLTAGE fT -1000 VBE 10 1 -0.1 -1200 -1 -10 REVERSE VOLTAGE (mV) —— IC PC 625 fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) 1000 TRANSITION FREQUENCY Ta=100℃ hFE -0.48mA -0.40mA -0 -0.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) DC CURRENT GAIN -0.56mA -80 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -0.72mA -0.64mA 100 COMMON EMITTER VCE= -6V —— V -20 (V) Ta 500 375 250 125 Ta=25℃ 10 -10 0 -100 COLLECTOR CURRENT IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) %'HF,2011