JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 3DD13003 TO-126C TRANSISTOR (NPN) FEATURES 1.BASE High total power disspation 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value 700 Unit V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 3.EMITTER ℃ ELECTRICAL CHARACTERISTICS (Ta =25 ℃ unless otherwise specified) Parameter symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V= IC =1mA, IE 0 (BR)CBO 700 V Collector-emitter breakdown voltage V(BR)CEO = IC=10mA, IB 0 400 V 9 V Emitter-base breakdown voltage = V(BR)EBO IE=1mA, IC 0 Collector cut-off current I= VCB=700V,IE 0 CBO 1 mA Collector cut-off current I= VCE=400V,IB 0 CEO 0.5 mA 1 mA Emitter cut-off current = IEBO VEB=9V, IC 0 DC current gain hFE(1) VCE=5V, IC= 0.5 A 8 hFE(2) VCE=5V, IC= 1.5A 5 40 Collector-emitter saturation voltage = VCE(sat) IC=1A,IB 0.25A V Base-emitter saturation voltage = VBE(sat) IC=1A,IB 0.25A 1.2 V Transition frequency fT VCE=10V,I&=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, = VCC 100V Storage time ts ,& P$ Base-emitter voltage &/$66,),&$7,212) hFE 5 MHz 0.5 = VBE IE 2A µs 3 μs V 5DQN 5DQJH 8-10 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 A2 Range 2-2.5 (ȝs ) 2.5-3(ȝs ) B1 3-3.5(ȝs ) B2 3.5-4 (ȝs ) ',Mar,201 Typical Characteristics 3DD13003 Static Charistic 800 COMMON EMITTER Ta=25℃ 30mA 18mA COLLECTOR CURRENT Ta=25℃ DC CURRENT GAIN IC 21mA 15mA 400 IC Ta=100℃ 24mA 600 —— hFE (mA) 27mA 12mA 9mA 200 10 6mA IB COMMON EMITTER VCE= 5V =3mA 0 1 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— 8 1 IC Ta=25℃ Ta=100 ℃ β=4 100 10 IC —— IC —— 100 IC 1000 1500 (mA) IC Ta=100 ℃ Ta=25℃ β=4 10 1 1000 1500 100 COLLECTOR CURREMT 100 VCEsat 1000 1000 1 10 COLLECTOR CURRENT VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) hFE 100 10 100 COLLECTOR CURREMT (mA) VBE fT 10 —— 1000 1500 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 100 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) 1500 1000 IC 10 COMMON EMITTER VCE=5V 1 0.0 COMMON EMITTER VCE=10V Ta=25℃ 1 0.3 0.6 0.9 1.2 20 5000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (W) Ta=25 ℃ Cib CAPACITANCE C (pF) 1000 100 Cob 10 1 0.1 PC 1.50 f=1MHz IE=0/IC=0 200 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC (mA) Ta 1.25 1.00 0.75 0.50 0.25 0.00 1 REVERSE VOLTAGE 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) ',Mar,201