JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CESDB LC5V0AP SOT-23 ESD Protection Diodes 3 DESCRIPTION The CESDBLC5V0AP is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. 1 2 FEATURES z z Low Leakage Response Time is Typically low Maximum Ratings (Ta=25℃ unless otherwise noted) Parameter Symbol IEC61000−4−2(ESD) ESD voltage Limits Unit Air Contact ±25 Per Human Body Model Per Machine Model 16 KV 400 V ±25 KV Total power dissipation on FR-5 board (Note 1) PD 225 mW Thermal Resistance Junction−to−Ambient RθJA 555.5 ℃/W TL 260 ℃ Tj, Tstg -55 ~ +150 ℃ Lead Solder Temperature − Maximum (10 Second Duration) Junction and Storage temperature range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. B,Dec,2011 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current C Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Device + CESDBLC5V0AP Device Marking BL5A VRWM IR (μA) VBR (V) @ IT IT VC(V) (V) @ VRWM Max Max Min Max mA V 0.1 5.8 8.0 1.0 5 5.0 (Note 2) @IPP = 1 A VC (V) C (pF)@ @ IPP= 3 A VR=0V,f=1MHz Max 7 Max 12 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. B,Dec,2011