JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C-C Plastic-Encapsulate Diodes ESDBL5V0Y1 WBFBP-02C-C ESD Protection Diode (1.0*0.6*0.5) unit:mm DESCRIPTION The ESDBL5V0Y1 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. FEATURES z Reverse Working (Stand-Off) Voltage: 5.0 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) Per Human Body Model z IEC61000−4−2 Level 4 ESD Protection MARKING：Y Y TOPVIEW Maximum Ratings @Ta=25℃ Parameter IEC61000−4−2(ESD) ESD Voltage Symbol Air Contact Per Human Body Model Per Machine Model Lead Solder Temperature − Maximum (10 Second Duration) Junction and Storage Temperature Range Limit ±２５ ±２５ TL Tj, Tstg Unit KV 16 kV 400 V 260 ℃ -55 ~ +150 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. A-1,Jul,2013 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Device* ESDBL5V0Y1 Device Marking Y VRWM IR(μA) VBR(V)@IT (Note2) IT VC C(pF)@ (V) @VRWM Max Max Min Max mA V Typ Max 5.0 0.1 5.8 8.0 1.0 12.5 12 15 @IPP=5A VR=0V,f=1MHz *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃. A-1,Jul,2013 ESDBL5V0Y1 Typical Characteristics Reverse Capacitance Characteristics Characteristics 15 Pulsed Ta=25℃ (mA) REVERSE CURRENT IR f=1MHz Ta=100℃ 75 CAPACITANCE BETWEEN TERMINALS CT (pF) 100 50 Ta=25℃ 25 0 -25 -50 12 9 6 3 -75 -100 -8 -6 -4 -2 0 REVERSE VOLTAGE 2 4 VR 6 8 (V) 0 0 1 2 3 REVERSE VOLTAGE 4 5 VR 6 (V) Power Derating Curve POWER DISSIPATION PD (mW) 150 100 50 FR-5 BOARD 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A-1,Jul,2013