ESD9B5V

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD9B5V
ESD PROTECTION DIODE
Features
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Small SOD-923 Package
Bi-directional Configurations
Low Leakage
Fast Response Time < 1 ns
Protects One Power or I/O Port
ESD Rating of Class 3 (>16KV) per Human Body Model
ESD Protection to IEC 61000-4-2 Level 4
EFT Protection to IEC 61000-4-4 Level 4
RoHS Compliant in Lead-Free Versions
Applications
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Communication Systems & Cellular Phones
Personal Digital Assistant (PDA)
Digital Cameras
Power Supplies
Absolute Maximum Ratings
Parameter
IEC 61000-4-2 (ESD)
Symbol
Contact
IEC 61000-4-2 (EFT)
Value
Units
±8
kV
40
A
Total Power Dissipation on FR-5 Board (Note 1) @ TA=25℃
PD
150
mW
Thermal Resistance, Junction-to-Ambient
RθJA
400
℃/W
Junction and Storage Temperature Range
TJ,TSTG
-55 to 150
℃
Lead Solder Temperature – Maximum (10 Second Duration)
TL
260
℃
Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0*0.75*0.62 in.
------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD9B5V
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
IT
Test Current
VBR
Breakdown Voltage @ IT
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Device
ESD9B5V
IT(mA)
VRWM
IR(uA)
VBR (V) @ IT
Device
(V)
@ VRWM
(Note 2)
Marking
Max
Max
Min
Max
5.0
1.0
5.8
7.8
C
(pF)
Max
1.0
15
2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃
Figure 1. Typical Breakdown Voltage
versus Temperature
Fig 2. Typical Leakage Current versus
Temperature
------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD9B5V
Package Dimensions
SOD-923
MILLMETERS
DIM
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
0.36
0.40
0.43
0.014
0.016
0.017
b
0.15
0.20
0.25
0.006
0.008
0.010
c
0.07
0.12
0.17
0.003
0.005
0.007
D
0.75
0.80
0.85
0.030
0.031
0.033
E
0.55
0.60
0.65
0.022
0.024
0.026
HE
0.95
1.00
1.05
0.037
0.039
0.041
L
0.05
0.10
0.15
0.002
0.004
0.006
------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD