JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors JC(T EMT18 DUAL TRANSISTOR(PNP+PNP) SOT-563 FEATURES Two 2SA2018 chips in a SOT-563 package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference Marking: T18 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -0.5 A PC Collector Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-10mA Collector-emitter saturation voltage Transition frequency Output capacitance www.cj-elec.com VCE(sat) fT Cob 270 680 IC=-200mA, IB=-10mA -0.25 V VCE=-2V, IC=-10mA, f=100MHz 260 MHz VCB=-10V, IE=0, f=1MHz 6.5 pF 1 C,May,2015 A,Jun,2014 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 2 C,May,2015 SOT-563 Tape and Reel www.cj-elec.com 3 C,May,2015