IS63WV1024BLL IS64WV1024BLL

IS63WV1024BLL
IS64WV1024BLL
128K x 8 HIGH-SPEED CMOS STATIC RAM
MAY 2012
FEATURES
DESCRIPTION
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V – 3.6V
• High-performance, low-power CMOS process
• CMOS Low Power Operation
50 mW (typical) operating current
25 µW (typical) standby current
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Packages available:
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I)
– 48-Ball miniBGA (6mm x 8mm)
– 32-pin 300-mil SOJ
• Lead-free available
The ISSI IS63/64WV1024BLL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63/64WV1024BLL is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 25 µW (typical) with CMOS input levels.
The IS63/64WV1024BLL operates from a single VDD
power supply. The IS63/64WV1024BLL is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
1
IS63WV1024BLL
IS64WV1024BLL
PIN CONFIGURATION
PIN CONFIGURATION
32-Pin SOJ
32-Pin TSOP (Type II) (T)
32-Pin sTSOP (Type I) (H)
A0
1
32
A16
A1
2
31
A15
A2
3
30
A14
A3
4
29
A13
CE
5
28
OE
I/O0
6
27
I/O7
I/O1
7
26
I/O6
VDD
8
25
GND
GND
9
24
VDD
I/O2
10
23
I/O5
I/O3
11
22
I/O4
WE
12
21
A12
A4
13
20
A11
A5
14
19
A10
A6
15
18
A9
A7
16
17
A8
PIN DESCRIPTIONS
2
A0-A16
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Bidirectional Ports
VDD
Power
GND
Ground
A0
A1
A2
A3
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A4
A5
A6
A7
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8
PIN CONFIGURATION
48-mini BGA (B) (6 mm x 8 mm)
1
2
3
4
5
6
A
NC
OE
A2
A6
A7
NC
B
I/O1
NC
A1
A5
CE
I/O8
C
I/O2
NC
A0
A4
NC
I/O7
D
GND
NC
NC
A3
NC
VDD
E
VDD
NC
NC
NC
NC
GND
F
I/O3
NC
A14
A11
I/O5
I/O6
G
I/O4
NC
A15
A12
WE
A8
H
NC
A10
A16
A13
A9
NC
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
CE
OE
I/O Operation
VDD Current
X
H
X
High-Z
ISB1, ISB2
H
H
L
L
L
L
H
L
X
High-Z
DOUT
DIN
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
PT
VDD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
VDD Related to GND
Value
–0.5 to VDD+0.5
–65 to +150
1.5
-0.2 to +3.9
Unit
V
°C
W
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
VDD (15 ns)
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
VDD (12 ns)
3.3V + 10%
3.3V + 10%
3.3V + 10%
3
IS63WV1024BLL
IS64WV1024BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
2.3
—
V
VOL
Output LOW Voltage
VDD = Min., IOL = 1.0 mA
—
0.4
V
VIH
Input HIGH Voltage
2.0
VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–2
2
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–2
2
µA
Min.
Max.
Unit
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 10%
Symbol
Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
—
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
—
0.4
V
VIH
Input HIGH Voltage
2
VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–2
2
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–2
2
µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Options
ICC
VDD = Max.,
IOUT = 0 mA, f = fMAX
COM.
VDD Dynamic Operating
Supply Current
IND.
AUTO
typ.(2)
ICC1
Operating Supply
VDD = Max.,
COM.
Current
Iout = 0mA, f = 0
IND.
AUTO
ISB1
ISB2
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
COM.
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
COM.
IND.
AUTO
IND.
AUTO
typ.(2)
-12 ns
Min. Max.
-15 ns
Min. Max.
Unit
—
—
—
—
35
45
60
20
—
—
—
—
30
40
50
20
mA
—
—
—
5
5
5
—
—
—
5
5
5
mA
—
—
—
3
4
4
—
—
—
3
4
4
mA
—
—
—
—
20
50
75
6
—
—
—
—
20
50
75
6
uA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested.
CAPACITANCE(1)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
5
IS63WV1024BLL
IS64WV1024BLL
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level (VRef)
Output Load
Unit
(2.5V-3.6V)
0V to VDD V
1.5ns
VDD/2
Unit
(3.3V + 10%)
0V to VDD V
1.5ns
VDD/2 + 0.05
See Figures 1a and 1b
See Figures 1a and 1b
AC TEST LOADS
319 Ω
Zo=50Ω
VRef
OUTPUT
30 pF
Including
jig and
scope
Figure 1a.
6
2.5V
50Ω
OUTPUT
5 pF
Including
jig and
scope
353 Ω
Figure 1b.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-12 ns
Min.
Max.
-15 ns
Min.
Max.
Symbol
Parameter
tRC
Read Cycle Time
12
—
15
—
ns
tAA
Address Access Time
—
12
—
15
ns
tOHA
Output Hold Time
3
—
3
—
ns
tACE
CE Access Time
—
12
—
15
ns
tDOE
OE Access Time
—
6
—
7
ns
tLZOE(2)
OE to Low-Z Output
0
—
0
—
ns
tHZOE(2)
OE to High-Z Output
0
6
0
6
ns
tLZCE
CE to Low-Z Output
3
—
3
—
ns
tHZCE
CE to High-Z Output
0
6
0
6
ns
tPU
CE to Power Up Time
0
—
0
—
ns
tPD
CE to Power Down Time
—
12
—
15
ns
(2)
(2)
Unit
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
VDD-0.3V and output loading specified in Figure 1.
2. Tested with the loading specified in Figure 1. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
7
IS63WV1024BLL
IS64WV1024BLL
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
DATA VALID
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
t OHA
OE
t HZOE
t DOE
t LZOE
CE
t ACE
t HZCE
t LZCE
DOUT
HIGH-Z
DATA VALID
CE_RD2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-12 ns
Min.
Max.
-15 ns
Min.
Max.
Symbol
Parameter
tWC
Write Cycle Time
12
—
15
—
ns
tSCE
CE to Write End
9
—
10
—
ns
tAW
Address Setup Time to
Write End
9
—
10
—
ns
tHA
Address Hold from
Write End
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
ns
PWE1(1)
t
WE Pulse Width (OE High)
9
—
10
—
ns
tPWE2(2)
WE Pulse Width (OE Low)
11
—
12
—
ns
tSD
Data Setup to Write End
9
—
9
—
ns
tHD
Unit
Data Hold from Write End
0
—
0
—
ns
(2)
tHZWE
WE LOW to High-Z Output
—
6
—
7
ns
tLZWE(2)
WE HIGH to Low-Z Output
3
—
3
—
ns
Notes:
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
VDD-0.3V and output loading specified in Figure 1a.
2. Tested with the loading specified in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2 (CE Controlled, OE = HIGH or LOW)
t WC
VALID ADDRESS
ADDRESS
t SA
t SCE
t HA
CE
t AW
t PWE1
t PWE2
WE
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
CE_WR1.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
9
IS63WV1024BLL
IS64WV1024BLL
AC WAVEFORMS
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)
t WC
ADDRESS
VALID ADDRESS
t HA
OE
CE
LOW
t AW
t PWE1
WE
t SA
DOUT
t HZWE
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
t HD
DATAIN VALID
DIN
CE_WR2.eps
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t WC
ADDRESS
VALID ADDRESS
OE
LOW
CE
LOW
t HA
t AW
t PWE2
WE
tSA
DOUT
DATA UNDEFINED
t HZWE
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
CE_WR3.eps
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE > VIH.
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Condition
Operations
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.8V, CE ≥ VDD – 0.2V
COM.
IND.
AUTO.
tSDR
tRDR
Min.
Typ.(1)
Max.
1.8
—
3.6
V
—
—
—
6
6
6
20
50
75
µA
Unit
Data Retention Setup Time
See Data Retention Waveform
0
—
—
ns
Recovery Time
See Data Retention Waveform
tRC
—
—
ns
Note:
1. Typical values are measured at VDD = 2.5V, TA = 25 C. Not 100% tested.
O
DATA RETENTION WAVEFORM (CE Controlled)
tSDR
Data Retention Mode
tRDR
VDD
VDR
CE
GND
CE ≥ VDD - 0.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
11
IS63WV1024BLL
IS64WV1024BLL
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns)
12
Order Part No.
Package
IS63WV1024BLL-12TI
IS63WV1024BLL-12TLI
IS63WV1024BLL-12HI
IS63WV1024BLL-12HLI
IS63WV1024BLL-12JLI
IS63WV1024BLL-12BI
IS63WV1024BLL-12BLI
32-pin TSOP (Type II)
32-pin TSOP (Type II), Lead-free
sTSOP (Type I) (8mm x13.4mm)
sTSOP (Type I) (8mm x13.4mm), Lead-free
32-pin SOJ (300-mil), Lead-free
mBGA(6mmx8mm)
mBGA(6mmx8mm), Lead-free
Automotive Range (A3): –40°C to +85°C
Speed (ns)
15 (12*)
Order Part No.
Package
IS64WV1024BLL-15TA3
IS64WV1024BLL-15TLA3
IS64WV1024BLL-15HA3
IS64WV1024BLL-15HLA3
IS64WV1024BLL-15BA3
IS64WV1024BLL-15BLA3
32-pin TSOP (Type II)
32-pin TSOP (Type II), Lead-free
sTSOP (Type I) (8mm x13.4mm)
sTSOP (Type I) (8mm x13.4mm), Lead-free
mBGA(6mmx8mm)
mBGA(6mmx8mm), Lead-free
Note:
1. Speed = 12ns for VDD = 3.3V + 10%. Speed = 15ns for VDD = 2.5V-3.6V.
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
IS63WV1024BLL
IS64WV1024BLL
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
13
IS63WV1024BLL
IS64WV1024BLL
14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12
08/12/2008
Package Outline
1. CONTROLLING DIMENSION : MM .
2. Reference document : JEDEC MO-207
NOTE :
IS63WV1024BLL
IS64WV1024BLL
15
IS63WV1024BLL
IS64WV1024BLL
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
05/09/12