FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS(ON) (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications Switching mode power supply, plasma display TVs, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.1.00, Aug.20.2004, page 1 of 6 Symbol VDSS VGSS ID IDM PD Tch Tstg — Ratings 250 ±30 50 150 250 – 55 to +150 – 55 to +150 4.8 Unit V V A A W °C °C g Conditions VGS = 0 V VDS = 0 V Typical value FS50SM-5A Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Rev.1.00, Aug.20.2004, page 2 of 6 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min. 250 ±30 — — 3.0 — — — — — — — — — — — — Typ. — — — — 3.5 0.052 1.3 35 3500 500 50 60 110 270 90 1.5 — Max. — — ±10 1 4.0 0.068 1.7 — — — — — — — — 2.0 0.50 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 150 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case FS50SM-5A Performance Curves Drain Power Dissipation Derating Curve Maximum Safe Operating Area 250 Drain Current ID (A) Drain Power Dissipation PD (W) 300 200 150 100 50 0 0 160 25 50 75 100 125 150 175 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 50 VGS = 20V Tc = 25°C Pulse Test PD = 250W PD = 250W Drain Current ID (A) Drain Current ID (A) 10V 120 103 7 5 3 tw = 10 µs 2 102 7 5 3 100 µs 2 101 1 ms 7 5 3 2 100 DC 7 5 3 Tc = 25°C 2 Single Pulse 10–1 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 8V 80 7V 40 6V 40 Tc = 25°C Pulse Test VGS = 20V 6V 7V 30 20 5.5V 10 5.5V 0 4 8 12 16 4 8 12 Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) Tc = 25°C Pulse Test 8 6 ID = 75A 4 50A 2 25A 0 0 Drain-Source Voltage VDS (V) 10 0 0 20 4 8 12 16 Gate-Source Voltage VGS (V) Rev.1.00, Aug.20.2004, page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) 0 5V 0.16 16 Tc = 25°C Pulse Test 0.12 VGS = 10V 0.08 20V 0.04 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain Current ID (A) FS50SM-5A Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25°C VDS = 30V Pulse Test 40 30 20 10 0 4 Capacitance (pF) VDS = 10V Pulse Test Tc = 25°C 2 101 7 5 4 3 75°C 125°C 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 10 2 Drain Current ID (A) Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) Ciss 2 102 7 5 Coss 2 101 7 5 Crss 2 100 7 Tch = 25°C 5 f = 1MHz 2 VGS = 0V 10–1 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 103 7 5 4 3 td(off) tr 2 tf 102 7 5 4 3 Tch = 25°C 2 VDD = 150V VGS = 10V RGEN = RGS = 50Ω 1 10 100 2 3 4 5 7 101 td(on) 2 3 4 5 7 10 2 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 160 16 Tch = 25°C ID = 50A VGS = 0V Pulse Test VDS = 100V 12 200V 8 4 0 102 7 5 4 3 Gate-Source Voltage VGS (V) 103 7 5 Gate-Source Voltage VGS (V) 12 8 Switching Time (ns) 0 Source Current IS (A) Drain Current ID (A) 50 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 0 40 80 120 160 Gate Charge Qg (nC) Rev.1.00, Aug.20.2004, page 4 of 6 200 120 Tc = 125°C 80 25°C 40 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 25A 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS50SM-5A 150 6 VDS = 10V ID = 1mA 5 Pulse Test 4 3 2 1 0 VGS = 0V ID = 1mA Pulse Test 1.2 0.8 0.4 –50 0 50 100 150 Transient Thermal Impedance Zth(ch-c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) 1.6 0 50 100 Transient Thermal Impedance Characteristics 100 7 D = 1.0 5 3 0.5 2 0.2 10–1 0.1 7 5 3 PDM 0.05 tw 0.02 0.01 Single Pulse 2 T D = tw T 10–2 –4 10 2 3 5 7 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) –50 90% D.U.T. RGEN RL Vin Vout RGS 10% 10% 10% VDD 90% td(on) Rev.1.00, Aug.20.2004, page 5 of 6 tr 90% td(off) tf FS50SM-5A Package Dimensions TO-3P EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 4.8 Cu alloy 15.9 max 4.5 4 2 20.0 φ 3.2 5.0 1.5 20.5 max 2 1.0 0.6 5.45 2.8 5.45 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 4 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Static electricity prevention bag 20 Type name Lead form Plastic Magazine (Tube) 30 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example FS50SM-5A FS50SM-5A-A8