MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-8A FL14KM-8A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-8A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 400V ● rDS (ON) (MAX) .............................................................. 0.55Ω ● ID ......................................................................................... 14A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 400 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±30 14 42 V A A IDA PD Tch Tstg Viso Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 14 35 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 400 ±30 — — — — — — ±10 V V µA VDS = 400V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V — 2.0 — — — 3.0 0.42 2.94 1 4.0 0.55 3.85 mA V Ω V — — — — 8.5 1100 150 25 — — — — S pF pF pF — — — — 20 40 130 70 — — — — ns ns ns ns — 1.5 2.0 V — — 3.57 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 7 5 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 100µs 101 1ms 7 5 10ms 3 2 100ms 100 7 5 3 2 TC = 25°C Single Pulse 10–1 0 50 100 150 7 200 DC 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 16 TC = 25°C Pulse Test 12 8V 5V 8 4 PD = 35W DRAIN CURRENT ID (A) 6V 10V VGS = 20V 6V 10V 8V TC = 25°C Pulse Test 8 5V 6 4 PD = 35W 2 4V 4V 0 0 5 CASE TEMPERATURE TC (°C) 20 DRAIN CURRENT ID (A) tw = 10µs 3 2 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 16 ID = 21A 12 8 14A 4 0 1.0 TC = 25°C Pulse Test 7A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.8 0.6 VGS = 10V 0.4 20V 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 20 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 12 8 4 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 7 5 75°C 3 2 125°C 100 7 5 VDS = 10V Pulse Test 10–1 0 10 20 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 7 5 3 2 3 Ciss 103 7 5 3 2 Coss 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C 101 3 2 104 101 3 2 2 td(off) 102 tf tr 7 5 3 td(on) 2 101 7 5 100 TCh = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE SOURCE CURRENT IS (A) VDS = 100V 16 200V 300V 12 8 4 TCh = 25°C ID = 14A 0 20 40 60 80 12 8 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 125°C GATE CHARGE Qg (nC) VGS = 10V 7 ID = 7A 5 Pulse Test 1.4 TC = 25°C 75°C 0 101 10–1 VGS = 0V Pulse Test 16 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 20 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 0.05 10–1 0.02 0.01 7 5 3 2 PDM tw Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001