n -C hannel Pow er MO S FET OptiMOS™ BSC0909NS D at a S heet 3.1, 2010-10-18 Final I ndus t ri al & M ul t i m ark et OptiMOS™ Power-MOSFET BSC0909NS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performancepackages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications Features • • • • • • • • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Applications • • • • On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 34 V IFX OptiMOS webpage RDS(on),max 9.2 m# IFX OptiMOS product brief ID 44 A IFX OptiMOS spice models QOSS 10 IFX Design tools Qg.typ 7.3 nC nC Type Package Marking BSC0909NS PG-TDSON-8 0909NS 1) J-STD20 and JESD22 Final Data Sheet 1 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current Values ID Pulsed drain current2) Min. Typ. Max. - - 44 Unit Note / Test Condition A VGS=10 V, TC=25 °C 28 VGS=10 V, TC=100 °C 39 VGS=4.5 V, TC=25 °C 24 VGS=4.5 V, TC=100 °C 12 VGS=4.5 V, TA=25 °C, RthJA=50 K/W1)) TC=25 °C ID,pulse - - 176 Avalanche current, single pulse IAS - - 35 Avalanche energy, single pulse EAS - - 10 mJ Gate source voltage VGS -20 - 20 V Power dissipation Ptot - - 27 W 3) ID=25 A,RGS=25 # TC=25 °C TA=25 °C, RthJA=50 K/W1)) 2.5 Operating and storage temperature Tj,Tstg IEC climatic category; DIN IEC 68-1 -55 - 150 °C 55 150 56 Ncm 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 3 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Thermal resistance, junction - case RthJC Device on PCB RthJA Values Min. Typ. Max. - - 4.6 - - Unit Note / Test Condition °K/W bottom 20 top 50 6 cm2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air Final Data Sheet 2 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Values Min. Typ. Max. 34 - - Unit Note / Test Condition V VGS=0 V, ID=1.0 mA Gate threshold voltage VGS(th) 1 - 2. Zero gate voltage drain current IDSS - 0.1 1 - 10 100 - 10 100 nA VGS=16 V, VDS=0 V - 9.4 11.8 m# VGS=4.5 V, ID=15 A, - 7.7 9.2 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance RG - 3 Transconductance gfs 25 50 Table 5 VDS=VGS, ID=250 µA VDS=34 V, VGS=0 V, Tj=25 °C µA VDS=34 V, VGS=0 V, Tj=125 °C VGS=10 V, ID=20 A, # S |VDS|>2|ID|RDS(on)max, ID=30 A Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Input capacitance Ciss - 1110 - Output capacitance Coss - 395 - Reverse transfer capacitance Crss - 25 - Turn-on delay time td(on) - 9.6 - Rise time tr - 4.4 - Turn-off delay time td(off) - 8.9 - Fall time tf - 5.4 - Final Data Sheet 3 Unit Note / Test Condition pF VGS=0 V, VDS=15 V, f=1 MHz ns VDD=15 V, VGS=4.5 V, ID=30 A, RG= 1.6 # 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics Table 6 Gate charge characteristics1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition nC VDD=15 V, ID=30 A, VGS=0 to 4.5 V Gate to source charge Qgs - 3.8 - Gate charge at threshold Qg(th) - 1.7 - Gate to drain charge Qgd - 1.8 - Switching charge Qsw - 3.8 - Gate charge total Qg - 7.3 - Gate plateau voltage Vplateau - 3.3 - V Gate charge total Qg - 15 - nC Gate charge total, sync. FET Qg(sync) 6.2 VDS=0.1 V, VGS=0 to 4.5 V Output charge Qoss 10 VDD=15 V, VGS=0 V VDD=15 V, ID=30 A, VGS=0 to 10V 1) See figure 16 for gate charge parameter definition Table 7 Reverse diode characteristics Parameter Symbol Values Min. Typ. Unit Note / Test Condition A TC=25 °C Max. Diode continuous forward current Is 25 Diode pulse current IS,pulse 176 Diode forward voltage VSD - 0.92 - V VGS=0 V, IF=30 A, Tj=25 °C Reverse recovery charge Qrr - - 10 nC VR=15 V, IF=Is, diF/dt=400 A/µs Final Data Sheet 4 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet 5 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Final Data Sheet 6 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Final Data Sheet 7 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Final Data Sheet 8 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Package outline 6 Package outline Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches Final Data Sheet 9 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Package outline Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches Final Data Sheet 10 3.1, 2010-10-18 OptiMOS™ Power-MOSFET BSC0909NS Revision History 7 Revision History Revision History: 2010-10-18, 3.1 Previous Revision: Revision Subjects (major changes since last revision) 0.9 Release of target data sheet 2.0 Release Final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2010-10-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 11 3.1, 2010-10-18