TR1129 - Infineon

BF P840 F ES D
Low N oise A mpli fier for 3.4 G H z 3.8 G Hz ( B and 4 2/ 4 3)
Technic al Rep ort T R 1129
Revision: Rev. 1.1
2013-06-05
RF and P r otecti on D evic es
Edition 2013-06-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Technical Report TR1129
Revision History: 2013-06-05
Previous Revision:
Page
Subjects (major changes since last revision)
17 to 22
Figure 17 to Figure 28: Temperature measurement results are included
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MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
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Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Technical Report, Rev. 1.1
3 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Table of Content
1
1.1
1.2
1.3
Application Circuit and Performance Overview .............................................................................. 5
Summary of Measurement Results ...................................................................................................... 5
High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE Application .................... 6
Schematics and Bill-of-Materials .......................................................................................................... 8
2
Measured Graphs ............................................................................................................................. 10
3
Evaluation Board and layout Information ...................................................................................... 23
4
Authors .............................................................................................................................................. 25
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Figure 25
Figure 26
Figure 27
Figure 28
Figure 29
Figure 30
Figure 31
Figure 32
Package and pin connections of BFP840FESD in Topview ................................................................ 6
Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application ............................... 8
Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................................. 10
Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................ 10
Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz ................................................................. 11
Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................................... 11
Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................... 12
Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................... 12
Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................ 13
Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................. 13
Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................... 14
Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD.................................... 14
1dB Compression Point of the BFP840FESD Circuit at 3600 MHz ................................................... 15
rd
Output 3 Order Intercept Point of BFP840FESD at 3600 MHz........................................................ 15
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16
Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ......................................... 17
Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) .... 17
BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C (Vcc=3.0
V) ........................................................................................................................................................ 18
BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) 18
BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 19
BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith Chart)
(Vcc=3.0 V) ........................................................................................................................................ 19
BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) ... 20
BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith Chart)
(Vcc=3.0 V) ........................................................................................................................................ 20
1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from -40˚C
to 85˚C (Vcc=3.0 V) ............................................................................................................................ 21
K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 21
µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22
µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22
Photo Picture of Evaluation Board ..................................................................................................... 23
Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board .................................... 23
Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................... 24
PCB Layer Information ....................................................................................................................... 24
List of Tables
Table 1
Table 2
Summary of Measurement Results ...................................................................................................... 5
Bill-of-Materials..................................................................................................................................... 9
Technical Report, Rev. 1.1
4 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
1
Application Circuit and Performance Overview
Device:
BFP840FESD
Application:
Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42/ 43)
PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD
1.1
Summary of Measurement Results
Table 1
Summary of Measurement Results
Parameter
Symbol
Value
Unit
DC Voltage
Vcc
3.0
V
DC Current
Icc
14.5
mA
Frequency Range
Freq
3400
3600
3800
MHz
Gain
G
18.2
17.7
17.2
dB
Noise Figure
NF
1.11
1.06
1.11
dB
RLin
11.6
12.2
13.3
dB
RLout
23.8
23.7
15.0
dB
IRev
29.6
29.2
29.0
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Input P1dB
IP1dB
-12.6
dBm
Output P1dB
OP1dB
4.1
dBm
Input IP3
IIP3
-3
dBm
Output IP3
OIP3
14.7
dBm
k
> 1.0
--
Stability
Technical Report, Rev. 1.1
5 / 26
Note/Test Condition
SMA and PCB losses (~0.05 dB)
are subtracted
Measured @ 3600MHz
Measured @ 3600MHz, ∆f =1
MHz, Pin= - 30 dBm
Measured up to 15 GHz
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Application Circuit and Performance Overview
1.2
High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE
Application
The BFP840FESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed
for high performance 3.4 – 3.8 GHz low noise amplifier (LNA) solutions for LTE connectivity
applications. It combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process
with special device geometry engineering to reduce the parasitic capacitance between
substrate and transistor that degrades high-frequency characteristics, resulting in an inherent
input matching and a major improvement in power gain Band 42/43 together with a low noise
figure performance that is industry's best.
The BFP840FESD has an integrated 1.5kV HBM ESD protection which makes the device
robust against electrostatic discharge and extreme RF input power. The device offers its high
performance at low current and voltage and is especially well-suited for portable battery
powered applications in which energy efficiency is a key requirement.
The BFP840FESD is housed in flat-leads TSFP-4-1 package. Further variants are available
in industry standard visible-leads SOT343 package (BFP840ESD) and in the low-height
0.31mm TSLP-3-9 package (BFR840L3RHESD) specially fitting into modules.
Figure 1 shows the pin assignment of package of BFP840FESD in the top view:
B 1
4 E
XYs
E 2
3 C
BFPXXXF
Figure 1
Package and pin connections of BFP840FESD in Topview
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Application Circuit and Performance Overview
This application note presents the measurement results of the Low Noise Amplifier using
BFP840FESD for 3400 MHz to 3800 MHz LTE applications. It requires 10 passive 0402 SMD
components and can provide 17.7 dB gain at 3600 MHz. The noise figure varies from 1.03
dB to 1.08 dB (SMA and PCB losses are subtracted) over the frequency band.
The circuit achieves an input return loss of 12 dB and output return loss 24 dB. Furthermore,
the circuit is unconditionally stable from 10 MHz to 15 GHz. However, Proper RF grounding
on PCB has to be ensured in order to achieve stability k-factor > 1 (Figure 3111).
At 3600 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3
reaches 14.7 dBm. Besides, we obtain input 1dB input compression point IP1dB of -12.6
dBm at 3600 MHz.
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Application Circuit and Performance Overview
1.3
Schematics and Bill-of-Materials
Vcc= 3.0 V
J3
DC Connector
All passives are “0402“ case size
Inductors: LQG Series
Capacitors: Various
I = 14.5 mA
C3
39 pF
R1
33 kΩ
R2
20 Ω
C4
39 pF
L1
1.8 nH
J1
RF Port1
INPUT
Figure 2
C1
6.8 pF
R3
100 Ω
C2
1.2 pF
Q1
BFP840FESD
R4
5.1 Ω
L2
1.6 nH
J2
RF Port2
OUTPUT
Please refer to chapter 5 for layout proposal
Total Component Count = 10
including BFP840FESD transistor
PCB = M13031106 BFP840FESD TSFP-4-1
PCB Board Material = Standard FR4
Layer spacing (top RF to internal ground plane): 0.2 mm
Inductors = 2 (Low Q)
Resistors = 4
Capacitors = 4
Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Application Circuit and Performance Overview
Table 2
Bill-of-Materials
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
6.8
pF
0402
Various
DC block & input matching
C2
1.2
pF
0402
Various
DC block & output matching
C3
39
pF
0402
Various
RF decoupling
C4
39
pF
0402
Various
RF decoupling
L1
1.8
nH
0402
LQG
Input matching
L2
1.6
nH
0402
LQG
Output matching and high frequency
stability improvement
R1
33
kΩ
0402
Various
R2
20
Ω
0402
Various
R3
100
Ω
0402
Various
R4
5.1
Ω
0402
Various
TSLP-4-1
Infineon Technologies
Q1
Technical Report, Rev. 1.1
9 / 26
DC biasing
DC biasing (provides DC negative
feedback to stabilize DC operating point
over temperature variation, transistor
hFE variation, etc.)
Stability and input/output mathcing
Output matching and stability
improvement
BFP840FESD SiGe: C Heterojunction
Bipolar RF Transistor
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
2
Measured Graphs
Insertion Power Gain InBand
20
3600 MHz
17.7 dB
10
3400 MHz
18.2 dB
0
3800 MHz
17.2 dB
-10
-20
-30
2000
3000
4000
5000
Frequency (MHz)
Figure 3
Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD
Insertion Power Gain WideBand
20
3400 MHz
18.2 dB
10
3600 MHz
17.7 dB
0
3800 MHz
17.2 dB
-10
-20
-30
100
Figure 4
2100
4100
6100
Frequency (MHz)
8100
10000
Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Noise Figure_3G4_3G8
2
NF(dB)
1.5
3400 MHz
1.08 dB
3800 MHz
1.08 dB
1
3600 MHz
1.03 dB
0.5
0
3400
Figure 5
3500
3600
Frequency (MHz)
3700
3800
Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz
Reverse Isolation
-20
-40
3400 MHz
-29.6 dB
3600 MHz
-29.2 dB
3800 MHz
-29 dB
-60
-80
-100
2000
3000
4000
5000
Frequency (MHz)
Figure 6
Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD
Technical Report, Rev. 1.1
11 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Input Matching
0
3600 MHz
-12.2 dB
-10
3400 MHz
-11.6 dB
-20
3800 MHz
-13.3 dB
-30
-40
2000
3000
4000
5000
Frequency (MHz)
Figure 7
Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD
Swp Max
5000MHz
2.
0
6
0.
0.8
1.0
Input Matching Smith
0.
4
0
3.
0
4.
5.0
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0
3800 MHz
r 0.790891
x -0.327001
0.6
0.4
0.2
10.0
-10.0
3400 MHz
r 0.93369
x -0.52487
3600 MHz
r 0.831217
x -0.434733
-3
.0
.0
-2
-1.0
-0.8
-0
.6
.4
-0
Figure 8
-4
.0
-5.
0
2
-0.
Swp Min
2000MHz
Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart)
Technical Report, Rev. 1.1
12 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Output Matching
0
3800 MHz
-15 dB
-10
-20
3400 MHz
-23.8 dB
3600 MHz
-23.7 dB
-30
-40
2000
3000
4000
5000
Frequency (MHz)
Figure 9
Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD
Swp Max
5000MHz
2.
0
6
0.
0.8
1.0
Output Matching Smith
0.
4
0
3.
0.2
5.0
10.0
3400 MHz
r 0.965828
x -0.12063
-10.0
2
-0.
4
.0
-5.
0
-3
.0
.0
-2
-1.0
-0.8
-0
.6
.4
-0
Figure 10
5.0
4.0
3.0
2.0
10.0
1.0
0.8
0.6
0.4
0.2
3600 MHz
r 1.13344
x 0.0318644
0
0
4.
3800 MHz
r 1.36842
x 0.198658
Swp Min
2000MHz
Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart)
Technical Report, Rev. 1.1
13 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Stability k Factor
3
2.5
2
1.5
1
10081 MHz
1.3
0.5
0
100
5100
10100
15000
Frequency (MHz)
Figure 11
Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD
Stability Mu Factor
4
MU1
MU2
3
2
1
0
10
5010
10010
15000
Frequency (MHz)
Figure 12
Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Input 1dB Compression Point_3G6
25
-12.6 dBm
16.78 dB
Gain(dB)
20
15
-25 dBm
17.78 dB
10
5
0
-25
-20
-15
-10
-5
0
Pin (dBm)
Figure 13
1dB Compression Point of the BFP840FESD Circuit at 3600 MHz
Output 3rd Order Intercept Point_3G6
0
3600 MHz
-20.1
3601 MHz
-20.1
Power (dBm)
-20
-40
-60
3599 MHz
-87.9
3602 MHz
-89.7
-80
-100
3598
Figure 14
3599
3600
3601
Frequency (MHz)
3602
3603
rd
Output 3 Order Intercept Point of BFP840FESD at 3600 MHz
Technical Report, Rev. 1.1
15 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
OFF_Mode
0
3400 MHz
-25.1 dB
3800 MHz
-24.7 dB
-20
-40
3600 MHz
-24.8 dB
-60
-80
-100
1000
Figure 15
3000
5000
7000
Frequency (MHz)
9000
10000
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD
OFF_Mode
0
3400 MHz
-25.1 dB
3800 MHz
-24.7 dB
-20
-40
3600 MHz
-24.8 dB
-60
-80
-100
1000
Figure 16
3000
5000
7000
Frequency (MHz)
9000
10000
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
Bias Current
20
-40 DegC
16.8
18
Icc (mA)
PlotCol(1,2)
Bias_current
25 DegC
14.6
16
85 DegC
12
14
12
10
-40
Figure 17
-15
10
35
Temperature (DegC)
60
85
Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)
Noise Figure
1.5
1.4
1.3
NF (dB)
1.2
1.1
1
0.9
0.8
-40 °C
0.7
0 °C
25 °C
50 °C
85 °C
0.6
3.4
Figure 18
3.5
3.6
Frequency (GHz)
3.7
3.8
Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V)
Technical Report, Rev. 1.1
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
22
20
3.4 GHz
18.9 dB
3.8 GHz
17.83 dB
S21 (dB)
18
3.4 GHz
17.38 dB
16
3.8 GHz
16.4 dB
14
12
-40 °C
0 °C
25 °C
50 °C
85 °C
10
2
Figure 19
2.5
3
3.5
Frequency (GHz)
4
4.5
5
BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C
(Vcc=3.0 V)
-25
S12 (dB)
-27
-29
-31
-33
-40 °C
0 °C
25 °C
50 °C
85 °C
-35
3.2
Figure 20
3.4
3.6
Frequency (GHz)
3.8
4
BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C
(Vcc=3.0V)
Technical Report, Rev. 1.1
18 / 26
2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
0
-40 °C
0 °C
25 °C
50 °C
85 °C
3.4 GHz
-9.963 dB
3.8 GHz
-11.64 dB
S11 (dB)
-10
3.4 GHz
-12.81 dB
-20
3.8 GHz
-15.58 dB
-30
-40
2.5
Figure 21
3
3.5
4
4.5
Frequency (GHz)
5
5.5
6
BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)
Swp Max
4GHz
2.
0
6
0.
0.8
1.0
S11
0.
4
0
3.
0
4.
-40 °C
0 °C
25 °C
50 °C
5.0
85 °C
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
-10.0
2
-0.
4
.0
-5.
0
-3
.0
Figure 22
.0
-2
-1.0
-0.8
-0
.6
.4
-0
Swp Min
3.2GHz
BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith
Chart) (Vcc=3.0 V)
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BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
10
0
3.4 GHz
-27.93 dB
S22 (dB)
-10
3.8 GHz
-12.79 dB
-20
-30
-40
-40 °C
0 °C
25 °C
50 °C
85 °C
-50
2.5
Figure 23
3
3.5
4
4.5
Frequency (GHz)
5
5.5
6
BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C
(Vcc=3.0V)
Swp Max
4GHz
2.
0
6
0.
0.8
1.0
S22
0.
4
0
3.
0
4.
5.0
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
-10.0
2
-0.
-4
.0
-5.
0
-1.0
-0.8
-0
.6
Figure 24
25 °C
50 °C
85 °C
.0
-2
0 °C
-
-3
.0
4
-40
0. °C
Swp Min
3.2GHz
BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith
Chart) (Vcc=3.0 V)
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
20
-20 dBm
18.263
-12.91 dBm
17.26
Output power (dBm)
18
16
-20 dBm
16.808
-12.84 dBm
15.8
14
-40 °C
0 °C
25 °C
50 °C
85 °C
12
-20
Figure 25
-18
-16
-14
-12
Input power (dBm)
-10
-8
1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from
-40˚C to 85˚C (Vcc=3.0 V)
K factor
5
4
3
2
10.18 GHz
1.117
1
-40 °C
0 °C
25 °C
50 °C
85 °C
0
0.2
5.2
10.2
15
Frequency (GHz)
Figure 26
K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Measured Graphs
u1
4
3
2
1
-40 °C
0 °C
25 °C
50 °C
85 °C
0
0.01
5.01
10.01
15
Frequency (GHz)
Figure 27
µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)
u2
4
3
2
1
-40 °C
0 °C
25 °C
50 °C
85 °C
0
0.05
5.05
10.05
15
Frequency (GHz)
Figure 28
µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Evaluation Board and layout Information
3
Evaluation Board and layout Information
In this Technical Report, the following PCB is used:
PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD
PCB Board Material: Standard FR4
ᵋr of PCB Material: 4.3 (FR4)
Figure 29
Photo Picture of Evaluation Board
Figure 30
Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board
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2013-06-05
BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Evaluation Board and layout Information
0.3mm
BFP840FESD
0.6mm
Figure 31
Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD
Vias
FR4 Core, 0.2 mm
Copper
35µm
FR4 Prepreg,
0.8 mm
Figure 32
PCB Layer Information
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BFP840FESD
Low Noise Amplifier for 3.4GHz- 3.8GHz
Authors
4
Authors
Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices”
Fang Jie, Application Engineer of Business Unit “RF and Protection Devices”
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Published by Infineon Technologies AG
TR1129