Application Note, Rev. 1.2, April 2008
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power
Amp in an Alarm Transmitter Monitor Application
RF & Protection Devices
Edition 2008-04-04
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2011.
All Rights Reserved.
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Application Note No. 157
Application Note No. 157
Revision History: 2008-04-04, Rev. 1.2
Previous Version: 2001-12-08, Rev. 1.1
Page
Subjects (major changes since last revision)
All
Small changes in figure descriptions
Application Note
3
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
1
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Transmitter Monitor Application
Overview
•
•
•
•
•
The BFP450 SIEGET transistor in the B6HF process is shown as a low-cost discrete single-stage Class A RF
"Power Amplifier" at 869 MHz for a European Alarm Transmitter Monitor. Application is mobile and runs from
a battery.
The BFP450 in the SOT343 package is shown as an alternative to a 2-stage Gallium Arsenide amplifier.
Note the system power supply voltage is nominally 3.0 V, but can go down to 2.2 V when battery is discharged.
Data is taken at both 3.0 and 2.2 V. Output 1 dB gain compression point is +19.0 dBm at 3.0 V, and drops to
+15.7 dBm at 2.2 V. A very simple bias circuit is used here, and therefore BFP450 collector current is directly
proportional to supply voltage => decreased collector current at the reduced supply voltage gives rise to a drop
in output P1dB. It may be possible to mitigate P1dB degradation via use of an active bias circuit.
BFP450 amplifier is used in a standard BFP620 Version 1.0 PC board, with a sawed-off output. The PCB is
made in standard low-cost FR-4 material. Standard low-cost chip components are used, in 0402 and 0603
case sizes.
Total component count = 14, including BFP450 transistor, but excluding RF and DC Connectors.
PCB Cross-Section Diagram
Note PCB is low-cost, standard FR4 material.
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Figure 1
PCB - Cross Sectional Diagram
Application Note
4
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Summary of Data
Table 1
Summary of Data, T = 25 °C
Parameter
Result / Value
869 MHz
Frequency Range
869 MHz +/- 200 kHz
DC Current
68.5 mA, VSupply = 3.0 V
42.8 mA, VSupply = 2.2 V
DC Voltage, VCC
3.0 V and 2.2 V
Output P1dB
+19.0 dBm @ 3.0 V, 68.5 mA
+15.7 dBm @ 2.2 V, 42.8 mA
Output 3rd Order Intercept
+29.9 dBm @ 3.0 V, 68.5 mA
+27.1 dBm @ 2.2 V, 42.8 mA
Noise Figure
2.4 dBm @ 3.0 V, 68.5 mA
2.0 dBm @ 2.2 V, 42.8 mA
Gain
21.5 dBm @ 3.0 V, 68.5 mA
21.2 dBm @ 2.2 V, 42.8 mA
Input return loss
15.0 dBm @ 3.0 V, 68.5 mA
13.7 dBm @ 2.2 V, 42.8 mA
Output return loss
14.7 dBm @ 3.0 V, 68.5 mA
16.3 dBm @ 2.2 V, 42.8 mA
Reverse isolation
24.4 dBm @ 3.0 V, 68.5 mA
23.6 dBm @ 2.2 V, 42.8 mA
Application Note
5
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Bill of Material
Table 2
Bill of Material
Reference
Designator
Value
Manufacturer
Case Size
Function
C1
47 pF
Various
0402
Input DC block
C2
6.2 pF
Various
0402
Input impedance match
C3
0.1 µF
Various
0402
Low frequency ground
C4
47 pF
Various
0402
RF bypass / RF block
C5
0.1 µF
Various
0603
Low frequency ground
C6
47 pF
Various
0402
RF bypass / RF block
C7
47 pF
Various
0402
Output DC block
L1
3.9 nH
Murata LQG10A low cost 0402
inductor
Input impedance match
L2
33 nH
Murata LQG10A low cost 0402
inductor
RF choke on base (provides path for DC
bias to base).
L3
8.2 nH
Murata LQG10A low cost 0402
inductor
RF choke on collector (provides path for DC
bias to base, also influences output
impedance match).
R1
2.4 kΩ
Various
0402
Bias to base of transistor.
R2
2.2 Ω
Various
0402
Bias resistor - provides small amount of DC
negative feedback to transistor - to
compensate for beta and temperature
variations.
R3
2.2 Ω
Various
0402
Helps to stabilize transistor and ensure K>1
at low frequencies, also influences output
match.
Q1
-
Infineon Technologies
SOT343
BFP450 medium power transistor in B6HF
bipolar process.
J1, J2
-
Johnson 142-0701-841
-
RF input / output connectors
J3
-
AMP 5 pin header MTA100 series 640456-5
(standard pin plating) or
641215-5 (gold plated
pins)
-
DC connector
Application Note
Pins 1, 5 = ground
Pin 3 = VCC
Pins 2, 4 = no connection
6
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Schematic Diagram
Total parts count = 14, including BFP450, not including DC & RF connectors (7 capacitors, 3 resistors, 3 chip
inductors, BFP450 transistor).
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Figure 2
Schematic Diagram
Application Note
7
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Noise Figure, Plot, 3.0 V, 68.5 mA. Center of Plot (x-axis) is 869 MHz.
From Rohde & Schwarz FSEK3 + FESB30
System Preamplifier = MITEQ SMC-02
T = 25 °C, 3.0 V, 68.5 mA
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Figure 3
Noise Figure
Application Note
8
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Noise Figure, Tabular Data, 3.0 V, 68.5 mA
Table 3
Noise Figure, 3.0 V, 68.5 mA
Frequency
Noise Figure
819 MHz
2.15 dB
829 MHz
2.20 dB
839 MHz
2.24 dB
849 MHz
2.27 dB
859 MHz
2.33 dB
869 MHz
2.36 dB
879 MHz
2.42 dB
889 MHz
2.46 dB
899 MHz
2.53 dB
909 MHz
2.59 dB
919 MHz
2.65 dB
Application Note
9
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Noise Figure, Plot, 2.2 V, 42.8 mA. Center of Plot (x-axis) is 869 MHz.
From Rohde & Schwarz FSEK3 + FESB30
System Preamplifier = MITEQ SMC-02
T = 25 °C, 2.2 V, 42.8 mA
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Figure 4
Noise Figure
Application Note
10
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Noise Figure, Tabular Data, 2.2 V, 42.8 mA
Table 4
Noise Figure, 2.2 V, 42.8 mA
Frequency
Noise Figure
819 MHz
1.85 dB
829 MHz
1.88 dB
839 MHz
1.92 dB
849 MHz
1.94 dB
859 MHz
2.00 dB
869 MHz
2.00 dB
879 MHz
2.05 dB
889 MHz
2.09 dB
899 MHz
2.13 dB
909 MHz
2.20 dB
919 MHz
2.25 dB
Application Note
11
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Stability Factors K and B1, 3.0 V, 68.5 mA
For unconditional stability, K > 1 and B1 > 0. Note actual S-parameters from LNA Circuit Board are imported into
Ansoft Serenade, which then calculates and plots K and B1. Note LNA is unconditionally stable from low
frequencies up to 6 GHz. (Network analyzer upper frequency limit is 6 GHz.).
Note red trace is K, blue trace is B1.
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Plot of K(f) and B1(f) for 3.0 V, 68.5 mA
Application Note
12
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Stability Factors K and B1, 2.2 V, 42.8 mA
For unconditional stability, K > 1 and B1 > 0. Note actual S-parameters from LNA Circuit Board are imported into
Ansoft Serenade, which then calculates and plots K and B1. Note LNA is unconditionally stable from low
frequencies up to 6 GHz. (Network analyzer upper frequency limit is 6 GHz.).
Note red trace is K, blue trace is B1.
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Plot of K(f) and B1(f) for 2.2 V, 42.8 mA
Application Note
13
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Scanned Image of PC Board (overall view)
Figure 7
Image of PC Board
Application Note
14
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Scanned Image of PC Board (close-in view).
Figure 8
Image of PC Board, close-in view
Application Note
15
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Amplifier Gain Compression at 869 MHz
Table 5
Gain Compression at 869 MHz, T = 25 °C
Power Supply
Voltage
Current
Small Signal Gain
Input P1dB
Output P1dB
3.0 V
68.5 mA
21.5 dB
-1.5 dBm
+19.0 dBm
2.2 V
42.8 mA
21.2 dB
-4.5 dBm
+15.7 dBm
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Figure 9
Plot of Gain Compression
Application Note
16
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Log Mag
Narrow Span, 3.0 V, 68.5 mA
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Figure 10
Plot of Input Return Loss, Narrow Span, 3.0 V, 68.5 mA
Application Note
17
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Narrow Span, 3.0 V, 68.5 mA
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Figure 11
Smith Chart of Input Return Loss, Narrow Span, 3.0 V, 68.5 mA
Application Note
18
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Forward Gain
Narrow Span, 3.0 V, 68.5 mA
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Figure 12
Plot of Forward Gain, Narrow Span, 3.0 V, 68.5 mA
Application Note
19
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Reverse Isolation
Narrow Span, 3.0 V, 68.5 mA
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Figure 13
Plot of Reverse Isolation, Narrow Span, 3.0 V, 68.5 mA
Application Note
20
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Log Mag
Narrow Span, 3.0 V, 68.5 mA
&+ 6 ORJ0$*
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Figure 14
Plot of Output Return Loss, Narrow Span, 3.0 V, 68.5 mA
Application Note
21
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Narrow Span, 3.0 V, 68.5 mA
&+ 6 8)6
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Figure 15
Smith Chart of Output Return Loss, Narrow Span, 3.0 V, 68.5 mA
Application Note
22
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Log Mag
Narrow Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
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Figure 16
Plot of Input Return Loss, Narrow Span, 2.2 V, 42.8 mA
Application Note
23
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Narrow Span, 2.2 V, 42.8 mA
&+ 6 8)6
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Figure 17
Smith Chart of Input Return Loss, Narrow Span, 2.2 V, 42.8 mA
Application Note
24
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Forward Gain
Narrow Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
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Figure 18
Plot of Forward Gain, Narrow Span, 2.2 V, 42.8 mA
Application Note
25
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Reverse Isolation
Narrow Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
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Figure 19
Plot of Reverse Isolation, Narrow Span, 2.2 V, 42.8 mA
Application Note
26
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Log Mag
Narrow Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
G%
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Figure 20
Plot of Output Return Loss, Narrow Span, 2.2 V, 42.8 mA
Application Note
27
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Narrow Span, 2.2 V, 42.8 mA
&+ 6 8)6
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Figure 21
Smith Chart of Output Return Loss, Narrow Span, 2.2 V, 42.8 mA
Application Note
28
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Log Mag
Wide Span, 3.0 V, 68.5 mA
&+ 6 ORJ0$*
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Figure 22
Plot of Input Return Loss, Wide Span, 3.0 V, 68.5 mA
Application Note
29
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Wide Span, 3.0 V, 68.5 mA
&+ 6 8)6
B
'HF
Q+
0+]
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Figure 23
Smith Chart of Input Return Loss, Wide Span, 3.0 V, 68.5 mA
Application Note
30
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Forward Gain
Wide Span, 3.0 V, 68.5 mA
&+ 6 ORJ0$*
G%
5()G%
'HF
BG%
0+]
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Figure 24
Plot of Forward Gain, Wide Span, 3.0 V, 68.5 mA
Application Note
31
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Reverse Isolation
Wide Span, 3.0 V, 68.5 mA
&+ 6 ORJ0$*
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'HF
BG%
5()G%
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Figure 25
Plot of Reverse Isolation, Wide Span, 3.0 V, 68.5 mA
Application Note
32
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Log Mag
Wide Span, 3.0 V, 68.5 mA
&+ 6 ORJ0$*
G%
5()G%
'HF
BG%
0+]
35P
&RU
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6&$/(
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6PR
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Figure 26
Plot of Output Return Loss, Wide Span, 3.0 V, 68.5 mA
Application Note
33
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Wide Span, 3.0 V, 68.5 mA
&+ 6 8)6
B
'HF
S+
0+]
35P
&RU
'HO
6PR
67$570+]
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Figure 27
Smith Chart of Output Return Loss, Wide Span, 3.0 V, 68.5 mA
Application Note
34
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Log Mag
Wide Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
G%
5()G%
'HF
BG%
0+]
35P
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Figure 28
Plot of Input Return Loss, Wide Span, 2.2 V, 42.8 mA
Application Note
35
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Input Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Wide Span, 2.2 V, 42.8 mA
&+ 6 8)6
B
'HF
Q+
0+]
35P
&RU
'HO
6PR
67$570+]
67230+]
$1BVPLWKBLQSXWBUHWXUQBORVVBZLGHB9YVG
Figure 29
Smith Chart of Input Return Loss, Wide Span, 2.2 V, 42.8 mA
Application Note
36
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Forward Gain
Wide Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
G%
5()G%
'HF
BG%
0+]
35P
&RU
'HO
6&$/(
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Figure 30
Plot of Forward Gain, Wide Span, 2.2 V, 42.8 mA
Application Note
37
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Reverse Isolation
Wide Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
G%
'HF
BG%
5()G%
0+]
35P
&RU
'HO
6PR
67$570+]
67230+]
$1BSORWBUHYHUVHBLVRODWLRQBZLGHB9YVG
Figure 31
Plot of Reverse Isolation, Wide Span, 2.2 V, 42.8 mA
Application Note
38
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Log Mag
Wide Span, 2.2 V, 42.8 mA
&+ 6 ORJ0$*
G%
5()G%
'HF
BG%
0+]
35P
&RU
'HO
6PR
67$570+]
67230+]
$1BSORWBUHYHUVHBLVRODWLRQBZLGHB9YVG
Figure 32
Plot of Output Return Loss, Wide Span, 2.2 V, 42.8 mA
Application Note
39
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Output Return Loss, Smith Chart
Reference Plane = PCB Input SMA Connector
Wide Span, 2.2 V, 42.8 mA
&+ 6 8)6
'HF
S)
B
0+]
35P
&RU
'HO
6PR
67$570+]
67230+]
$1BVPLWKBRXWSXWBUHWXUQBORVVBZLGHB9YVG
Figure 33
Smith Chart of Output Return Loss, Wide Span, 2.2 V, 42.8 mA
Application Note
40
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
Low Voltage, VSupply = 2.2 V, VCE = 2.0 V, I = 42.8 mA
Output Response of Amplifier to Two-Tone 3rd Order Intercept Test
Input Stimulus: f1 = 869 MHz, f2 = 870 MHz, -17 dBm each tone, tone spacing = 1 MHz.
Input IP3 = -17 + (45.8 / 2) = +5.9 dBm
Output IP3 = +5.9 dBm + Gain = +5.9 dBm + 21.2 dBm = +27.1 dBm
Figure 34
Plot of Tow-Tone Test, LNA response, 2.2 V, 42.8 mA
Application Note
41
Rev. 1.2, 2008-04-04
Application Note No. 157
BFP450 SIEGET Transistor as an 869 MHz Power Amp in an Alarm
High Voltage, VSupply = 3.0 V, VCE = 2.7 V, I = 68.5 mA
Output Response of Amplifier to Two-Tone 3rd Order Intercept Test
Input Stimulus: f1 = 869 MHz, f2 = 870 MHz, -17 dBm each tone, tone spacing = 1 MHz.
Input IP3 = -17 + (50.8 / 2) = +8.4 dBm
Output IP3 = +8.4 dBm + Gain = +8.4 dBm + 21.5 dBm = +29.9 dBm
Figure 35
Plot of Tow-Tone Test, LNA response, 3.0 V, 68.5 mA
Application Note
42
Rev. 1.2, 2008-04-04