Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 150 Application Note No. 150 Revision History: 2008-02-22, Rev. 1.2 Previous Version: 2003-01-24, Rev. 1.1 Page Subjects (major changes since last revision) All Small changes in figure descriptions Application Note 3 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 1 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Package Overview • • • • • The low-cost, high performance BFR360F in the ultra-small TSFP-3 package is evaluated to show the feasibility of a 1 dB Noise Figure LNA for 900 MHz ISM band applications. The Printed Circuit Board Used is PCB 640-052402 Revision C, originally designed for a two-stage 5 - 6 GHz LNA application. Standard FR4 material is used. Low-cost, standard SMT passive components are used throughout, in "0402" case size. Total PCB area used for the single LNA stage is approximately 50 mm². Note that further reduction in PCB area is possible. Achieved > 15 dB gain, 1.1 dB Noise Figure at 915 MHz, on 3.0 V supply, drawing 5.7 mA. Note noise figure result does NOT "back out" FR4 PCB losses - if the PCB loss at LNA input were extracted, Noise Figure Results would be approximately 0.1 dB lower. PCB Cross - Section Diagram 7+,663$&,1*&5,7,&$/ 723/$<(5 LQFKPP ,17(51$/*5281'3/$1( LQFKPP" /$<(5)250(&+$1,&$/5,*,',7<2)3&%7+,&.1(66+(5(127&5,7,&$/$6 /21*$6727$/3&%7+,&.1(66'2(6127(;&((',1&+PP 63(&,),&$7,21)25727$/3&%7+,&.1(66,1&+ PPPP %27720/$<(5 $1B3&%YVG Figure 1 PCB - Cross Sectional Diagram Application Note 4 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Summary of Data T = 25 °C, Network analyzer source power = -25 dBm Table 1 Summary of Results Parameter Result Comments Frequency Range 902 - 928 MHz ISM band, but LNA usable down to approx. 850 MHz. DC Current 5.7 mA DC Voltage, VCC 3.0 V Collector-Emitter Voltage, VCE ≅ 2.74 V Gain 15.3 dB @ 902 MHz 15.4 dB @ 915 MHz 15.6 dB @ 928 MHz Noise Figure 1.1 dB @ 902 MHz 1.1 dB @ 915 MHz 1.1 dB @ 928 MHz These values do not extract PCB losses, etc. resulting from FR4 board an passives used on PCB these results are at input SMA connector. Input P1dB -17.0 dBm @ 915 MHz See input power sweep vs. gain plot, Figure 7. Input 3rd Order Intercept +11.6 dB @ 2400 MHz Please see Figure 15. Input Return Loss 11.1 dB @ 902 MHz 10.2 dB @ 915 MHz 10.2 dB @ 928 MHz Output Return Loss 10.7 dB @ 902 MHz 10.8 dB @ 915 MHz 10.4 dB @ 928 MHz Reverse Isolation 24.0 dB @ 902 MHz 23.7 dB @ 915 MHz 23.3 dB @ 928 MHz Application Note BFP640: VCEmax = 4.0 V 5 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Bill of Material Table 2 Bill of Material Reference Designator Value Manufacturer Case Size Function C1 0.1 µF Various 0402 DC blocking, input (also using cap above SRF gives it slight inductive characteristic for input match). C2 5.6 pF Various 0402 DC blocking and output matching. C4, C5 47 pF Various 0402 Output RF ground. C3, C6 0.1 µF Various 0402 Low frequency ground at base (Input 3rd Order Intercept improvement), low frequency decoupling / blocking. L1 18 nH Murata LQG15H low cost 0402 chip inductor RF choke to DC bias on base of Q1, some positive influence on input blocking. L2 8.2 nH Murata LQG15H low cost 0402 chip inductor RF choke to collector of Q1, also influences output match. R1 36 Ω Various 0402 Influence on RF stability and output match. R2 43 kΩ Various 0402 DC bias for base of Q1 R3 10 Ω Various 0402 Provides some DC feedback for bias compensation (beta variation, temperature, etc.). Q1 - Infineon Technologies TSFP-3 BFR360F Transistor, fT = 14 GHz J1, J3 - Johnson 142-0701-841 - RF input / output connectors J4 - AMP 5 pin header MTA100 series 640456-5 (standard pin plating) or 641215-5 (gold plated pins) - DC connector Application Note Pins 1, 5 = ground Pin 3 = VCC Pins 2, 4 = no connection 6 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Schematic Diagram 9FF 9 - '&&RQQHFWRU , P$ 5 . & & S) X) / Q+ - 5),1387 5 RKPV & X) 5 RKPV 4 %)5) 7UDQVLVWRU & S) / Q+ & S) =HUR 2KP -XPSHU & X) 1RWHEODFNUHFWDQJOHVDUHWUDFHVRUWUDFNV RQWKH3ULQWHG&LUFXLW%RDUGWKHVHPDUNV DUH1276XUIDFH0RXQW&RPSRQHQWV $OO,QGXFWRUVDUH0XUDWD/4*+IRUPHUO\/4*$ FDVHVL]H$OOFDSDFLWRUVDQGUHVLVWRUVDUHFDVHVL]H - 5),1387 287387 3&% 5HY& 3&%RDUG0DWHULDO 6WDQGDUG)5 $1B6FKHPDWLFYVG Figure 2 Schematic Diagram Application Note 7 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Noise Figure, Plot. Center of Plot (x-axis) is 915 MHz. 5RKGH6FKZDU])6(. -DQ 1RLVH)LJXUH (871DPH 0DQXIDFWXUHU 2SHUDWLQJ&RQGLWLRQV 2SHUDWRU1DPH 7HVW6SHFLILFDWLRQ &RPPHQW %)5)/RZ1RLVH$PSOLILHU0+],60%DQG ,QILQHRQ7HFKQRORJLHV 9 9, P$7 & *HUDUG:HYHUV 0+],60 2Q%)33&%5HY& -DQ $QDO\]HU 5)$WW 5HI/YO G% G%P 5%: 0+] 9%: +] 5DQJH G% 5HI/YODXWR 21 0RGH 'LUHFW (15 +3$(15 0HDVXUHPHQW QGVWDJHFRUU 21 1RLVH)LJXUHG% 0+] 0+]',9 0+] $1BSORWBQIYVG Figure 3 Noise Figure Application Note 8 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Noise Figure, Tabular Data From Rohde & Schwarz FSEK3 + FSEM30 + System Preamplifier System Preamplifier = MITEQ SMC-02 Table 3 Noise Figure Frequency Noise Figure 880 MHz 1.07 dB 882 MHz 1.08 dB 884 MHz 1.08 dB 886 MHz 1.10 dB 888 MHz 1.11 dB 890 MHz 1.08 dB 892 MHz 1.10 dB 894 MHz 1.08 dB 896 MHz 1.09 dB 898 MHz 1.10 dB 900 MHz 1.08 dB 902 MHz 1.07 dB 904 MHz 1.08 dB 906 MHz 1.08 dB 908 MHz 1.06 dB 910 MHz 1.09 dB 912 MHz 1.08 dB 914 MHz 1.09 dB 916 MHz 1.08 dB 918 MHz 1.07 dB 920 MHz 1.08 dB 922 MHz 1.08 dB 924 MHz 1.10 dB 926 MHz 1.06 dB 928 MHz 1.07 dB 930 MHz 1.09 dB 932 MHz 1.07 dB 934 MHz 1.07 dB 936 MHz 1.07 dB 938 MHz 1.06 dB 940 MHz 1.11 dB 942 MHz 1.08 dB 944 MHz 1.04 dB 946 MHz 1.08 dB 948 MHz 1.09 dB 950 MHz 1.06 dB Application Note 9 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Scanned Image of PC Board Figure 4 Image of PC Board Application Note 10 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Scanned Image of PC Board, Close-In Shot. Figure 5 Image of PC Board, Close-In Shot Application Note 11 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Stability Factor K and Stability Measure B1 Note that if K > 1 and B1 > 0, the amplifier is unconditionally stable. Measured LNA s-parameters were taken on a Network Analyzer & then imported into GENESYS simulation package, which calculates and plots K and B1. $1BSORWBVWDELOLW\B.B%YVG Figure 6 Plot of K(f) and B1(f) Application Note 12 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Power Sweep at 915 MHz (CW) Source Power (Input) swept from -25 to 0 dBm Input P1dB ≅ -17.0 dBm &+ 6 ORJ0$* G% 5()G% -DQ BG% G%P 35P BG% G%P &RU 'HO 6PR 67$57G%P &:0+] 6723G%P $1BSORWBSRZHUBVZHHSYVG Figure 7 Plot of Power Sweep Application Note 13 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Input Return Loss, Log Mag -DQ &+ 35P 'HO 6PR &RU 6 /2* G% 5()G% G% *+] &+ 0$5.(5 0+] 0DUNHUV G% 0+] G% 0+] G% 0+] 67$57 *+] 6723 *+] $1BSORWBLQSXWBUHWXUQBORVVYVG Figure 8 Plot of Input Return Loss Application Note 14 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Input Return Loss, Smith Chart Reference Plane = PCB Input SMA Connector -DQ &+ 35P 'HO 6PR &RU 6 8)6 S) *+] &+ 0$5.(5 0+] 0DUNHUV 0+] 0+] 0+] 67$57 *+] 6723 *+] $1BVPLWKBLQSXWBUHWXUQBORVVYVG Figure 9 Smith Chart of Input Return Loss Application Note 15 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Forward Gain -DQ &+ 35P 'HO 6PR &RU 6 /2* G% 5()G% G% *+] &+ 0$5.(5 0+] 0DUNHUV G% 0+] G% 0+] 67$57 G% 0+] *+] 6723 *+] $1BSORWBIZBJDLQYVG Figure 10 Plot of Forward Gain Application Note 16 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Forward Gain, Wide Span 50 MHz - 18 GHz -DQ &+ 6 /2* G% 5()G% G% *+] 35P 'HO 6PR &+ 0DUNHUV G% 0+] &RU 67$57 *+] 6723 *+] $1BSORWBIZBJDLQBZLGHYVG Figure 11 Plot of Forward Gain, Wide Span Application Note 17 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Reverse Isolation -DQ &+ 35P 'HO 6PR &RU 6 /2* G% 5()G% G% *+] &+ 0$5.(5 0+] 0DUNHUV G% 0+] G% 0+] G% 0+] 67$57 *+] 6723 *+] $1BSORWBUHYHUVHBLVRODWLRQYVG Figure 12 Plot of Reverse Isolation Application Note 18 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Output Return Loss, Log Mag -DQ &+ 35P 'HO 6PR &RU 6 /2* G% 5()G% G% *+] &+ 0$5.(5 0+] 0DUNHUV G% 0+] G% 0+] G% 0+] 67$57 *+] 6723 *+] $1BSORWBRXWSXWBUHWXUQBORVVYVG Figure 13 Plot of Output Return Loss Application Note 19 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 Output Return Loss, Smith Chart Reference Plane = PCB Output SMA Connector -DQ &+ 6 8)6 S) *+] 35P 'HO 6PR &RU &+ 0$5.(5 0+] 0DUNHUV 0+] 0+] 0+] 67$57 *+] 6723 *+] $1BVPLWKBRXWSXWBUHWXUQBORVVYVG Figure 14 Smith Chart of Output Return Loss Application Note 20 Rev. 1.2, 2008-02-22 Application Note No. 150 A 900 MHz Low Noise Amplifier Using the BFR360F Transistor in TSFP-3 LNA Output Response to Two-Tone Test Input stimulus: f1 = 914 MHz, f2 = 915 MHz, -25 dBm each tone. Input IP3 = -25 + (50.7 / 2) = -0.4 dBm $1BSORWBWZRBWRQHBUHVSRQVHYVG Figure 15 Tow-Tone Test, LNA Response Application Note 21 Rev. 1.2, 2008-02-22