A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7
A p p li c a t i o n N o t e N o . 1 1 8
BFP740F Ultra-Low Noise Silicon-Germanium
T r a n s i s t o r a s 5 - 6 G H z L o w N o i s e A m p l i f i er ( L N A )
R F & P r o t e c ti o n D e v i c e s
Edition 2007-08-28
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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Application Note No. 118
Application Note No. 118
Revision History: 2007-08-28, Rev. 1.2
Previous Version: 2004-04-15, Rev. 1.1
Page
Subjects (major changes since last revision)
All
Document layout change
Application Note
3
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
1
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6
GHz Low Noise Amplifier (LNA)
Overview
•
The new Silicon-Germanium BFP740F in TSFP-4 package is demonstrated as a 5 - 6 GHz Low Noise
Amplifier. A 3-layer PCB was employed, the PCB material being low-cost, high-loss industry standard "FR4"
epoxy material. Standard low-cost "0402" case size chip components were used throughout.
Applications
•
Wireless LAN (802.11 a); Cordless Telephones (5.8 GHz); other 5 - 6 GHz systems
Summary
•
•
Achieved >15 dB gain, 1.2 dB Noise Figure over the 5000 - 6000 MHz band, drawing 9.8 mA @ 3.0 volts. Input
3rd Order Intercept = +10.5 dBm, Output P1dB = +5.9 dBm. Please note this noise figure result does not extract
PC board losses, if PCB loss were extracted, noise figure result would improve by approximately 0.2 - 0.3 dB
(e.g. if loss is extracted, noise figure would be ≅ 0.9 to 1.0 dB)
Please note further optimization of LNA design is possible.
Further Work Required (to be done on a subsequent application board)
1. Improve input return loss slightly to achieve > 10_dB across frequency range
2. Increase stability factor “K” from 0.93 to > 1.0 at 3.98 GHz
3. Further optimize Noise Matching to improve noise figure (1.0 to 1.1 dB in PCB should be possible)
Cross Sectional Diagram of PC Board
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Figure 1
PCB - Cross Sectional Diagram
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Summary of Data
T = 25 °C, network analyzer source power ≈ -30 dBm
Table 1
Summary of LNA Data
Parameter
Result
Frequency Range
Under 5 to over 6 GHz
DC Current
9.8 mA @ 3.0 V supply voltage
(VCE = 2.6 V)
Gain
15.7 dB @ 5150 MHz
15.7 dB @ 5470 MHz
15.2 dB @ 5825 MHz
Noise Figure
1.2 dB @ 5150 MHz
1.2 dB @ 5470 MHz
1.2 dB @ 5825 MHz
Input P1dB
-8.8 dBm @ 5150 MHz
Output P1dB
+5.9 dBm @ 5150 MHz
rd
Input 3 Order Intercept
rd
Comments
+10.5 dBm @ 5150 MHz
Output 3 Order Intercept
+26.2 dBm @ 5150 MHz
Input Return Loss
8.5 dB @ 5150 MHz
10.4 dB @ 5470 MHz
11.9 dB @ 5825 MHz
Output Return Loss
10.1 dB @ 5150 MHz
10.0 dB @ 5470 MHz
9.9 dB @ 5825 MHz
Reverse Isolation
23.8 dB @ 5150 MHz
23.5 dB @ 5470 MHz
23.1 dB @ 5825 MHz
Application Note
5
Note power supply voltage is
measured directly across PCB supply
line and ground, to eliminate voltage
drop across wire harness!
These values do NOT extract PCB
losses, etc. resulting from FR4 board
and passives used on PCB - these
results are at input SMA connector.
See pages 22 and 23.
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Schematic Diagram
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Figure 2
Schematic Diagram
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Details on TSFP-4 Package (“Thin Small Flat Pack”). Dimensions in millimeters (mm).
0.2 ±0.05
1
3
1.2 ±0.05
0.2 ±0.05
4
0.55 ±0.04
2
0.2 ±0.05
10˚ MAX.
0.8 ±0.05
1.4 ±0.05
0.15 ±0.05
0.5 ±0.05
0.5 ±0.05
Figure 3
GPX01010
TSFP-4 package details
Recommended Soldering Footprint for TSFP-4 (dimensions in millimeters). Device package is to be oriented as
shown in above drawing (e.g. orient long package dimension horizontally on this footprint).
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Figure 4
TSFP-4 package - Soldering Footprint
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Noise Figure, Plot, 4 GHz to 7 GHz. Center of Plot (x-axis) is 5.5 GHz.
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Figure 5
Noise Figure
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Noise Figure, Tabular Data
From Rhode & Schwarz FSEK3 + FSEM30
System Preamplifier = MITEQ SMC-02
Table 2
Noise Figure
Frequency
Noise Figure
4000 MHz
1.24 dB
4050 MHz
1.25 dB
4100 MHz
1.25 dB
4150 MHz
1.26 dB
4200 MHz
1.26 dB
4250 MHz
1.25 dB
4300 MHz
1.25 dB
4350 MHz
1.25 dB
4400 MHz
1.24 dB
4450 MHz
1.26 dB
4500 MHz
1.26 dB
4550 MHz
1.29 dB
4600 MHz
1.24 dB
4650 MHz
1.26 dB
4700 MHz
1.23 dB
4750 MHz
1.23 dB
4800 MHz
1.23 dB
4850 MHz
1.22 dB
4900 MHz
1.23 dB
4950 MHz
1.25 dB
5000 MHz
1.25 dB
5050 MHz
1.24 dB
5100 MHz
1.21 dB
5150 MHz
1.23 dB
5200 MHz
1.21 dB
5250 MHz
1.20 dB
5300 MHz
1.25 dB
5350 MHz
1.17 dB
5400 MHz
1.20 dB
5450 MHz
1.20 dB
5500 MHz
1.16 dB
5550 MHz
1.17 dB
5600 MHz
1.17 dB
5650 MHz
1.16 dB
5700 MHz
1.14 dB
5750 MHz
1.14 dB
5800 MHz
1.15 dB
Application Note
9
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Table 2
Noise Figure (cont’d)
Frequency
Noise Figure
5850 MHz
1.16 dB
5900 MHz
1.14 dB
5950 MHz
1.16 dB
6000 MHz
1.15 dB
6050 MHz
1.16 dB
6100 MHz
1.14 dB
6150 MHz
1.18 dB
6200 MHz
1.18 dB
6250 MHz
1.15 dB
6300 MHz
1.16 dB
6350 MHz
1.18 dB
6400 MHz
1.18 dB
6450 MHz
1.18 dB
6500 MHz
1.17 dB
6550 MHz
1.17 dB
6600 MHz
1.17 dB
6650 MHz
1.17 dB
6700 MHz
1.14 dB
6750 MHz
1.19 dB
6800 MHz
1.17 dB
6850 MHz
1.21 dB
6900 MHz
1.23 dB
6950 MHz
1.23 dB
7000 MHz
1.26 dB
Application Note
10
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Scanned Image of PC Board
Figure 6
Image of PC Board
Application Note
11
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Scanned Image of PC Board, Close-In Shot
Figure 7
Image of PC Board, Close-In Shot
Application Note
12
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Stability
Rohde and Schwarz ZVC Network Analyzer calculates and plots Stability Factor "K" in real time. Note minimum
K value is approximately 0.93 over the 5 MHz to 8 GHz range.Futher work is needed to bring K>1.
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Plot of Stability K(f)
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Gain Compression at 5120 MHz
Amplifier is checked for 1 dB compression point at VCC = 3.0 V, IC = 9.8 mA (with VCE = 2.6 V). An Aglient power
meter was used to ensure accurate power levels are measured (as opposed to using Vector Network Analyzer in
"Power Sweep" mode).
Input P1dB ≅ -8.8 dBm
Output P1dB ≅ -8.8 dBm + (Gain - 1 dB) = +5.9 dBm
Table 3
Gain Compression (5150 MHz)
PIN
dBm
POUT
dBm
Gain
dB
-15.0
+0.7
15.7
-14.0
+1.7
15.7
-13.0
+2.6
15.6
-12.0
+3.5
15.5
-11.0
+4.3
15.3
-10.0
+5.1
15.1
-9.0
+5.8
14.8
+6.5
14.5
-7.0
+7.0
14.0
-6.0
+7.5
13.5
-8.0
Application Note
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Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Please Note - all plots are taken from ZVC network analyzer with amplifier DC bias set to 3.0 V, 9.8 mA. Ambient
Temperature = 25 °C.
Input Return Loss, Log Mag
4.9 to 6.1 GHz Sweep
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Plot of Input Return Loss
Application Note
15
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Input Return Loss, Smith Chart
Reference Plane = Input SMA Connector on PC Board
4.9 to 6.1 GHz Sweep
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Smith Chart of Input Return Loss
Application Note
16
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Forward Gain
4.9 MHz to 6.1 GHz Sweep
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Plot of Forward Gain
Application Note
17
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Forward Gain, Wide Sweep
5 MHz to 8 GHz
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Plot of Forward Gain
Application Note
18
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Reverse Isolation
4.9 to 6.1 GHz Sweep
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Plot of Reverse Isolation
Application Note
19
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Output Return Loss, Log Mag
4.9 to 6.1 GHz Sweep
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Plot of Output Return Loss
Application Note
20
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Output Return Loss, Smith Chart
Reference Plane = Output SMA Connector on PC Board
4.9 to 6.1 GHz Sweep
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Smith Chart of Output Return Loss
Application Note
21
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
Input Stimulus for Amplifier Two-Tone Test
f1 = 5150 MHz, f2 = 5151 MHz, -20 dBm each tone.
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Figure 16
Tow-Tone Test
Application Note
22
Rev. 1.2, 2007-08-28
Application Note No. 118
BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6 GHz Low
LNA Response to Two-Tone Test
Input IP3 = -20 + (60.9/2) = +10.5 dBm
Output IP3 = +10.5 dBm + 15.7 dB gain = +26.2 dBm
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Figure 17
Tow-Tone Test, LNA Response
Application Note
23
Rev. 1.2, 2007-08-28