JCS12N65FC - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS12N65FC
主要参数
MAIN CHARACTERISTICS
ID
12
A
VDSS
650
V
Rdson(@Vgs=10V)
0.52Ω
Qg
30 nC
封装 Package
用途
APPLICATIONS
 高频开关电源
 电子镇流器
 UPS 电源
 High efficiency switch
产品特性
FEATURES
 低栅极电荷
 低 Crss (典型值 5pF)
 开关速度快
 产品全部经过雪崩测试
 RoHS 产品
 Low gate charge
 Low Crss (typical 5pF )
 Fast switching
 100% avalanche tested
 RoHS product
mode power supplies
 Electronic lamp ballasts
based on half bridge
 UPS
订货信息 ORDER MESSAGE
订 货 型 号
Order codes
印
记
Marking
封
装
Package
JCS12N65FC-O-F2-N-B
JCS12N65F
TO-220MF-K2
版本:201507A
无卤素
Halogen
Free
否
NO
包
装
Packaging
器件重量
Device
Weight
条管 Tube
2.20 g(typ)
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JCS12N65FC
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
符 号
Symbol
数 值
Value
JCS12N65FC
单 位
Unit
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
650
V
连续漏极电流
Drain Current -continuous
ID
T=25℃
T=100℃
12*
A
7.6*
A
最大脉冲漏极电流(注 1)
Drain Current -pulse (note 1)
IDM
48*
A
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche
Energy(note 2)
EAS
880
mJ
雪崩电流(注 1)
Avalanche Current (note 1)
IAR
12.0
A
重复雪崩能量(注 1)
Repetitive Avalanche Current
(note 1)
EAR
25
mJ
二极管反向恢复最大电压变化速
率(注 3)
Peak Diode Recovery dv/dt
(note 3)
dv/dt
5
V/ns
50
W
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
25℃
0.4
W/℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
-55~+150
℃
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
TL
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201507A
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JCS12N65FC
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电特性 ELECTRICAL CHARACTERISTIC
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最 大 单 位
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS ID=250μA, referenced to
/ΔTJ
25℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current, forward
反向栅极体漏电流
Gate-body leakage current, reverse
ID=250μA, VGS=0V
650
-
-
-
0.68
-
V/℃
VDS=650V, VGS=0V, TC=25℃
-
-
10
μA
VDS=520V, TC=125℃
-
-
100
μA
IGSSF
VDS=0V, VGS =30V
-
100
nA
IGSSR
VDS=0V, VGS =-30V
-
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2
3.0
静态导通电阻
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=6.0A
-
0.52 0.62
Ω
正向跨导
Forward Transconductance
gfs
-
7.3
-
S
-
1750
-
pF
-
185
-
pF
-
5
-
pF
-
V
-100 nA
通态特性 On-Characteristics
VDS = 40V , ID=6.0A(note 4)
4
V
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201507A
VDS=25V,
VGS =0V,
f=1.0MHZ
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JCS12N65FC
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电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最大 单位
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
td(off)
下降时间 Turn-Off Fall time
tf
栅极电荷总量 Total Gate Charge
Qg
栅-源电荷 Gate-Source charge
Qgs
栅-漏电荷 Gate-Drain charge
Qgd
VDD=325V,ID=12A,RG=25Ω,
VGS=10V
(note 4,5)
VDS =480V ,
ID=12A
VGS =10V(note 4,5)
-
37.1 48.5
ns
-
69.6 90.5
ns
-
75.2 99.1
ns
-
49.6 67.2
ns
-
33.1 48.3 nC
-
9.17
nC
-
11
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
12
A
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
48
A
-
-
1.39
V
-
427
-
ns
-
3.5
-
μC
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V, IS=12A
VGS=0V, IS=12A
dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
最大值
Value
符 号
Symbol
单 位
Unit
JCS12N65FC
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.5
℃/W
结到环境的热阻
Thermal Resistance, Junction to
Ambient
Rth(j-A)
62.5
℃/W
注:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=11.8mH, IAS=12A, VDD=50V,
TJ=25℃
RG=25 Ω,起始结温
2: L=11.8mH, IAS=12A, VDD=50V,, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤12A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃ 3:ISD ≤12A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
版本:201507A
5:Essentially independent of operating temperature
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JCS12N65FC
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
IF vs VF
IR vs VR
On-Resistance Variation vs
Drain Current
IF(AV)
vs
TC
Body Diode Forward Voltage
Variation
vs. Source Current and Temperature
IF(AV)
Capacitance Characteristics
IF(AV)
版本:201507A
vs
TC
vs
TC
Gate Charge Characteristics
IF(AV)
vs
TC
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JCS12N65FC
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Breakdown Voltage Variation
vs. Temperature
Maximum Safe Operating Area
On-Resistance Variation
vs. Temperature
Maximum Drain Current
vs. Case Temperature
Transient Thermal Response Curve
版本:201507A
6/8
R
JCS12N65FC
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF-K2
版本:201507A
单位 Unit :mm
7/8
JCS12N65FC
R
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site: www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址: www.hwdz.com.cn
HTU
UTH
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201507A
HTU
UTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
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