HSM126S Silicon Schottky Barrier Diode for System Protection REJ03G0174-0400Z (Previous: ADE-208-111C) Rev.4.00 Jan.28.2004 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM126S S14 MPAK Pin Arrangement 3 2 (Top View) Rev.4.00, Jan.28.2004, page 1 of 5 1 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 HSM126S Absolute Maximum Ratings *3 (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 20 V 200 mA 1 Average forward current IO * 2 Non-Repetitive peak forward surge current IFSM * 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. Sine wave, Two device total 2. 50 Hz half sine wave 1 pulse 3. Per one device Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR 2.0 µA VR = 5 V Forward voltage VF 0.35 V IF = 10 mA Capacitance C — 40 — pF VR = 0 V, f = 1 MHz Note: 1. Per one device Rev.4.00, Jan.28.2004, page 2 of 5 HSM126S Main Characteristic 10–2 10 Pulse test Pulse test 10–3 Reverse current IR (A) Forward current IF (A) 1.0 10–1 Ta = 75°C 10–2 Ta = 25°C 10–3 0 0.2 0.4 0.6 0.8 1.0 10–5 Ta = 25°C 10–7 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz Pulse test 100 Capacitance C (pF) Ta = 75°C 10–6 10–4 10–5 10–4 10 1.0 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.4.00, Jan.28.2004, page 3 of 5 HSM126S Example of application circuite SBD (EX. HSM126S) Vcc D1 Input R + Surge Vin IC / LSI D2 0.35V Vcc GND GND 0.35V − Surge Rev.4.00, Jan.28.2004, page 4 of 5 Built-in diode · 0.7V VF = · HSM126S Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.4.00, Jan.28.2004, page 5 of 5 MPAK — Conforms 0.011 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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