JCS11N90WT - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS11N90WT
主要参数
封装 Package
MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
11 A
900 V
1.10 Ω
66 nC
用途
APPLICATIONS
z 高频开关电源
z 电子镇流器
z UPS 电源
z High
产品特性
FEATURES
z Low gate charge
z Low Crss (typical 22pF )
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
z 低栅极电荷
z 低 Crss (典型值 22pF)
z 开关速度快
z 产品全部经过雪崩测试
z 高抗 dv/dt 能力
z RoHS 产品
订货信息 ORDER MESSAGE
订 货 型 号
印
Order codes
Marking
JCS11N90WT-O-W-N-B
版本:201202A
记
JCS11N90WT
封
装
Package
TO-247
无卤素
包
装
器件重量
Halogen
Free
Packaging
Device
Weight
NO
条管 Tube
5.20g(typ)
否
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JCS11N90WT
R
绝对最大额定值
项
ABSOLUTE RATINGS (Tc=25℃)
目
Parameter
符
号
Symbol
数
值
Value
单
位
JCS11N90WT
Unit
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
900
V
连续漏极电流
Drain Current
ID
T=25℃
T=100℃
11.0
A
6.9*
A
-continuous
最大脉冲漏极电流(注 1)
Drain Current - pulse
(note 1)
IDM
44
A
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
970
mJ
单脉冲雪崩能量(注 2)
EAS
Single Pulsed Avalanche Energy(note 2)
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
11
A
重复雪崩能量(注 1)
Repetitive Avalanche Current(note 1)
EAR
30.1
mJ
4.1
V/ns
277
W
2.22
W/℃
-55~+150
℃
300
℃
二极管反向恢复最大电压变化速率(注 3)
dv/dt
Peak Diode Recovery dv/dt(note 3)
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
25℃
最高结温及存储温度
Operating and Storage Temperature
Range
TJ,TSTG
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201202A
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JCS11N90WT
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电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符
号
Symbol
测试条件
Tests conditions
最小 典型 最大 单位
Min
Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
25℃
TJ
ID=250μA, VGS=0V
900
-
-
V
-
0.98
-
V/℃
VDS=900V,VGS=0V,
TC=25℃
-
-
1
μA
VDS=720V,
-
-
10
μA
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V,
VGS =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
3.0
-
5.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=5.5A
0.90 1.10
Ω
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=5.5A(note 4) -
9.5
S
TC=125℃
通态特性 On-Characteristics
-
-
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201202A
VDS=25V,
VGS =0V,
f=1.0MHZ
-
2550 3340
pF
-
210
270
pF
-
22
30
pF
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JCS11N90WT
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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=450V,ID=11A,RG=25Ω
(note 4,5)
-
54 122
ns
-
130 280
ns
td(off)
-
125 304
ns
下降时间 Turn-Off Fall time
tf
-
80 181
ns
栅极电荷总量 Total Gate Charge
Qg
-
66
80
nC
栅-源电荷 Gate-Source charge
Qgs
-
13
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
35
-
nC
VDS =720V ,
ID=11A
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
11
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
44
A
-
-
1.4
V
-
999
-
ns
-
16.9
-
μC
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=11A
VGS=0V, IS=11A
dIF/dt=100A/μs
(note 4)
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符
最大
号
Max
Symbol
JCS11N90WT
单
位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.45
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
40
℃/W
Notes:
注释:
1:Pulse width limited by maximum junction
1:脉冲宽度由最高结温限制
temperature
2:L=15mH, IAS=11A, VDD=50V, RG=25 Ω,起始结
2:L=15mH, IAS=11A, VDD=50V, RG=25 Ω,Starting
温 TJ=25℃
3:ISD ≤11A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
TJ=25℃
3:ISD ≤11A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:基本与工作温度无关
5:Essentially independent of operating temperature
版本:201202A
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JCS11N90WT
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特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
10
10
I D [A]
I D [A]
Top
150℃
25℃
1
Notes:
1. 250μs pulse test
2. TC=25℃
1
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
10
2
4
6
8
10
V G S [V]
V DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.4
1.2
I D R [A]
R DS ( on ) [ Ω ]
10
VGS=10V
1.0
150℃
1
25℃
VGS=20V
0.8
Notes:
1. 250μs pulse test
2. VGS=0V
Note:Tj=25℃
0
2
4
6
8
10
12
14
16
18
0.1
0.2
20
0.3
0.4
0.5
0.6
0.7
0.8
I D [A]
Capacitance [pF]
Ciss
1.2
1.3
1.4
1.5
VDS=720V
10
VDS=450V
VGS Gate Source Voltage[V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
4000
VDS=180V
8
3000
2500
6
2000
Coss
1500
4
1000
2
Crss
500
版本:201202A
1.1
12
4500
0
-1
10
1.0
Gate Charge Characteristics
Capacitance Characteristics
3500
0.9
V S D [V]
0
0
10
1
10
V D S Drain-Source Voltage [V]
*Note:Id=11A
0
10
20
30
40
50
60
70
Qg Toltal Gate Charge [nC]
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JCS11N90WT
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
1.2
4.0
3.0
R D ( on ) (Normalized)
BV DS (Normalized)
3.5
1.1
1.0
0.9
0.8
-75
Notes:
1. V G S = 0V
2. I D = 250μA
-50
-25
0
25
50
75
100
125
2.5
2.0
1.5
1.0
Notes:
1. VGS=10V
2. ID=5.5A
0.5
0.0
-75
150
-50
-25
0
25
T j [℃ ]
50
75
100
125
150
T j [℃ ]
Maximum Drain Current
vs. Case Temperature
Maximum Safe Operating Area
12
Operation in This Area
is Limited by RDS(ON)
ID Drain Current [A]
10
ID Drain Current [A]
2
10
10μs
100μs
1
10
1ms
10ms
100ms
0
10
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
-1
10
0
1
10
DC
6
4
2
2
10
8
3
10
10
VDS Drain-Source Voltage [V]
0
25
50
75
100
125
150
TC Case Temperature [℃ ]
Transient Thermal Response Curve
D = 0 .5
0 .2
0 .1
0 .1
N
1
2
3
0 .0 5
o te s :
Z θ J C (t)= 0 .4 5 ℃ /W M a x
D u ty F a c to r , D = t1 /t2
T J M -T c = P D M * Z θ J C(t)
0 .0 2
θ JC
(t) Thermal Response
1
0 .0 1
Z
P
0 .0 1
DM
t1
s in g le p u ls e
1 E -5
1 E -4
1 E -3
0 .0 1
t2
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
版本:201202A
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JCS11N90WT
外形尺寸 PACKAGE MECHANICAL DATA
TO-247
版本:201202A
单位 Unit :mm
7/8
JCS11N90WT
R
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1.
Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411
传真: 86-432-64671533
版本:201202A
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel:
86-432-64675588
64675688
64678411
Fax: 86-432-64671533
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