LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE (f=1kHz) en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max SOT-23 TOP VIEW TO-92 TOP VIEW IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170 ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation 400mW Continuous Power Dissipation@+25°C Maximum Currents Gate Forward Current IG(F)= 10mA Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V *For equivalent monolithic dual, see LSK389 family. ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(OFF) VGS IDSS IG CHARACTERISTIC MIN Gate to Source Breakdown Voltage -40 Gate to Source Pinch-off Voltage -0.2 Gate to Source Operating Voltage LSK170A LSK170B Drain to Source LSK170C Saturation Current LSK170D 2.6 6 10 18 TYP MAX -2 0.5 Gate Operating Current UNITS CONDITIONS V VDS = 0, ID = 100µA V VDS = 10V, ID = 1nA V VDS = 10V, ID = 1mA 6.5 12 20 30 mA VGS = 10V, VGS = 0 -0.5 nA VDG = 10V, ID = 1mA -1 nA VGS = -10V, VDS = 0 IGSS Gate to Source Leakage Current GfS Full Conduction Transconductance 22 mS VGD = 10V, VGS = 0, f = 1kHz GfS Typical Conduction Transconductance 10 mS en Noise Voltage 0.9 1.9 nV/√Hz en Noise Voltage 2.5 4 nV/√Hz VDG = 15V, ID = 1mA VDS = 10V, ID = 2mA, f = 1kHz, NBW=1Hz VDS = 10V, ID = 2mA, f = 10 Hz, NBW=1Hz CISS Common Source Input Capacitance 20 pF CRSS Common Source Reverse Transfer Cap. 5 pF Linear Integrated Systems • VDS = 15V, ID = 100µA, f = 1MHz 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201110 05/20/2014 Rev#A15 ECN# LSK170 SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS NOTES: 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3% 3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201110 05/20/2014 Rev#A15 ECN# LSK170