LSK170 - Linear Systems

LSK170
ULTRA LOW NOISE
SINGLE N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE (f=1kHz)
en = 0.9NV/√HZ
HIGH BREAKDOWN VOLTAGE
BVGSS=40V max
HIGH GAIN
Yfs=22mS (typ)
HIGH INPUT IMPEDENCE
IG= -500pA max
LOW CAPACITANCE
22pF max
SOT-23
TOP VIEW
TO-92
TOP VIEW
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
400mW
Continuous Power Dissipation@+25°C
Maximum Currents
Gate Forward Current
IG(F)= 10mA
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
*For equivalent monolithic dual, see LSK389 family.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
VGS(OFF)
VGS
IDSS
IG
CHARACTERISTIC
MIN
Gate to Source Breakdown Voltage
-40
Gate to Source Pinch-off Voltage
-0.2
Gate to Source Operating Voltage
LSK170A
LSK170B
Drain to Source
LSK170C
Saturation Current
LSK170D
2.6
6
10
18
TYP
MAX
-2
0.5
Gate Operating Current
UNITS
CONDITIONS
V
VDS = 0, ID = 100µA
V
VDS = 10V, ID = 1nA
V
VDS = 10V, ID = 1mA
6.5
12
20
30
mA
VGS = 10V, VGS = 0
-0.5
nA
VDG = 10V, ID = 1mA
-1
nA
VGS = -10V, VDS = 0
IGSS
Gate to Source Leakage Current
GfS
Full Conduction Transconductance
22
mS
VGD = 10V, VGS = 0, f = 1kHz
GfS
Typical Conduction Transconductance
10
mS
en
Noise Voltage
0.9
1.9
nV/√Hz
en
Noise Voltage
2.5
4
nV/√Hz
VDG = 15V, ID = 1mA
VDS = 10V, ID = 2mA, f = 1kHz,
NBW=1Hz
VDS = 10V, ID = 2mA, f = 10 Hz,
NBW=1Hz
CISS
Common Source Input Capacitance
20
pF
CRSS
Common Source Reverse Transfer Cap.
5
pF
Linear Integrated Systems
•
VDS = 15V, ID = 100µA, f = 1MHz
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201110 05/20/2014 Rev#A15 ECN# LSK170
SOT-23
0.89
1.03
0.37
0.51
1
1.78
2.05
2.80
3.04
3
2
1.20
1.40
2.10
2.64
0.89
1.12
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
NOTES:
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3%
3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201110 05/20/2014 Rev#A15 ECN# LSK170