2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) 1 Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation, TA=25°C Continuous Power Dissipation 3 350mW Maximum Current Drain to Source 20mA Maximum Voltages Drain to Body 25V Drain to Source 25V Gate to Source ±30V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVDSS Drain to Source Breakdown Voltage VDS(on) Drain to Source "On" Voltage VGS(th) Gate to Source Threshold Voltage TYP MAX UNITS 1 V 25 1 CONDITIONS ID = 10µA, VGS = 0V 5 ID = 2mA, VGS = 10V VDS = 10V, ID = 10µA IGSS Gate Leakage Current 10 pA VGS = ±30V, VDS = 0V IDSS Drain Leakage Current "Off" 10 nA VDS = 10V, VGS = 0V ID(on) Drain Current "On" 3 mA VGS = 10V, VDS = 10V 1000 µS VDS = 10V, ID = 2mA, f = 1MHz Ω VGS = 10V, ID = 100uA, f = 1kHz gfs rds(on) Crss Ciss Cdb Forward Transconductance Drain to Source "On" Resistance Reverse Transfer Capacitance Input Capacitance 300 2 2 Drain to Body Capacitance 5.0 2 Linear Integrated Systems VDS = 0V, VGS = 0V, f = 140kHz 1.3 5.0 • pF VDS = 10V, VGS = 0V, f = 140kHz VDB = 10V, f = 140kHz 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351 SYMBOL CHARACTERISTIC td(on) Turn On Delay Time tr Turn On Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time MAX 2 2 65 2 2 UNITS 45 60 ns 100 SWITCHING TEST CIRCUIT TIMING WAVEFORMS 0.170 Dimensions in inches 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 2. Not a production test. Guaranteed by design. 3. Derate 2.8 mW ºC above 25 ºC. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351