LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER FEATURES REPLACEMENT FOR LF5301, PF5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 LS5301 PF5301 @ 25 °C (unless otherwise stated), TA=25°C TO-72 TOP VIEW TO-92 TOP VIEW Maximum Temperatures Storage Temperature (TO-72) -55 to 150°C Storage Temperature (TO-92) -55 to 150°C Maximum Power Dissipation2 Continuous Power Dissipation, TA=25°C G S D 3 2 1 300mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -30V Gate to Source -30V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -30 VGS(off) Gate to Source Cutoff Voltage -0.6 IGSS IG Gate Leakage Current TYP MAX -3.0 LS5301 -1 PF5301 -5 Gate Operating Current UNIT V pA -0.04 CONDITIONS VDS = 0V, ID = -1µA VDS = 10V, ID = 1nA VDS = 0V, VGS = -15V VDG = 6V, ID = 5µA IDSS Drain to Source Saturation Current 30 500 µA VDS = 10V, VGS = 0V gfs Forward Transconductance 70 500 µS VDS = 10V, VGS = 0V, f = 1kHz Ciss Input Capacitance Crss Reverse Transfer Capacitance pF VDS = 10V, VGS = 0V, f = 1MHz en 3 1.5 Equivalent Noise Voltage 45 150 nV/√Hz VDG = 10V, ID = 50µA, f = 100Hz NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Derate PF series 2.8mW/° C when TA>25° C. Derate LS series 2.0mW°C when TA>25° C 3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicated electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201141 04/24/14 Rev#A12 ECN#LS5301 PF5301