2SD1978 Silicon NPN Epitaxial, Darlington REJ03G0799-0200 (Previous ADE-208-1162) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Symbol VCBO VCEO VEBO IC ic (peak) Ratings 120 120 7 1.5 3.0 Unit V V V A A Collector power dissipation Junction temperature Storage temperature E to C diode forward current PC Tj Tstg ID 0.9 150 –55 to +150 1.5 W °C °C A Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1978 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD Min 120 120 7 — — 2000 — — — — — Typ — — — — — — — — — — — Max — — — 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 Unit V V V µA µA V V V V V Test conditions IC = 0.1 mA, IE = 0 IC = 10 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 IC = 1 A, IB = 1 mA*1 IC = 1.5 A, IB = 1.5 mA*1 IC = 1 A, IB = 1 mA*1 IC = 1.5 A, IB = 1.5 mA*1 ID = 1.5 A*1 2SD1978 Main Characteristics Area of Safe Operation 10 1.2 0.4 100 50 0.1 Ta = 25°C 1 Shot Pulse 0.03 150 3 30,000 .9 W DC Current Transfer Ratio hFE 200 180 160 140 0.8 100 µA 0.4 IB = 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Current 10 3 200,500 VBE(sat) 1.0 500 VCE(sat) IC /IB = 200 0.3 0.1 0.1 300 DC Current Transfer Ratio vs. Collector Current 120 0 100 Typical Output Characteristics PC = 0 1.2 30 Collector to Emitter Voltage VCE (V) Ta = 25°C 1.6 10 Ambient Temperature Ta (°C) 2.0 Collector Current IC (A) 0.3 0.01 0 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 1.0 s 0µ 0.8 1 µs 10 Collector Current IC (A) iC(peak) 3 s s 1 m 10 m = PW Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve Ta = 25°C Pulse 0.3 1.0 3 Collector Current IC (A) Rev.2.00 Aug 10, 2005 page 3 of 5 10 10,000 3,000 °C 75 = 25 5 Ta –2 Ta = 25°C Pulse 1,000 300 0.1 0.3 1.0 3 Collector Current IC (A) 10 2SD1978 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 Ta = 25°C 10 3 1.0 0.3 1m 10 m 100 m 1 Time t (s) Rev.2.00 Aug 10, 2005 page 4 of 5 10 100 1,000 2SD1978 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD1978TZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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