RENESAS 2SD1978

2SD1978
Silicon NPN Epitaxial, Darlington
REJ03G0799-0200
(Previous ADE-208-1162)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SB1387
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
2
1. Emitter
2. Collector
3. Base
3
ID
2 kΩ
(Typ)
0.5 kΩ
(Typ)
1
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Symbol
VCBO
VCEO
VEBO
IC
ic (peak)
Ratings
120
120
7
1.5
3.0
Unit
V
V
V
A
A
Collector power dissipation
Junction temperature
Storage temperature
E to C diode forward current
PC
Tj
Tstg
ID
0.9
150
–55 to +150
1.5
W
°C
°C
A
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1978
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
E to C diode forward voltage
Note: 1. Pulse test
Rev.2.00 Aug 10, 2005 page 2 of 5
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
Min
120
120
7
—
—
2000
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
1.0
10
30000
1.5
2.0
2.0
2.5
3.0
Unit
V
V
V
µA
µA
V
V
V
V
V
Test conditions
IC = 0.1 mA, IE = 0
IC = 10 mA, RBE = ∞
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
2SD1978
Main Characteristics
Area of Safe Operation
10
1.2
0.4
100
50
0.1
Ta = 25°C
1 Shot Pulse
0.03
150
3
30,000
.9 W
DC Current Transfer Ratio hFE
200
180
160
140
0.8
100 µA
0.4
IB = 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Saturation Voltage vs.
Collector Current
10
3
200,500
VBE(sat)
1.0
500
VCE(sat)
IC /IB = 200
0.3
0.1
0.1
300
DC Current Transfer Ratio vs.
Collector Current
120
0
100
Typical Output Characteristics
PC = 0
1.2
30
Collector to Emitter Voltage VCE (V)
Ta = 25°C
1.6
10
Ambient Temperature Ta (°C)
2.0
Collector Current IC (A)
0.3
0.01
0
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
1.0
s
0µ
0.8
1 µs
10
Collector Current IC (A)
iC(peak)
3
s
s
1 m 10 m
=
PW
Collector Power Dissipation PC (W)
Maximum Collector Dissipation Curve
Ta = 25°C
Pulse
0.3
1.0
3
Collector Current IC (A)
Rev.2.00 Aug 10, 2005 page 3 of 5
10
10,000
3,000
°C
75
= 25
5
Ta
–2
Ta = 25°C
Pulse
1,000
300
0.1
0.3
1.0
3
Collector Current IC (A)
10
2SD1978
Transient Thermal Resistance
Thermal Resistance θj-a (°C/W)
300
100
30
Ta = 25°C
10
3
1.0
0.3
1m
10 m
100 m
1
Time t (s)
Rev.2.00 Aug 10, 2005 page 4 of 5
10
100
1,000
2SD1978
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-51
PRSS0003DC-A
TO-92 Mod / TO-92 ModV
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Part Name
2SD1978TZ
Quantity
2500
Shipping Container
Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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