Cree DA1000 LEDs Data Sheet

Cree® Direct Attach™ DA1000™ LEDs
CxxxDA1000-Sxxx00-2-G
Data Sheet
Cree’s DA™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the generalillumination market. The DA LEDs are among the brightest in the lighting market while delivering a low forward
voltage, resulting in a very bright and highly efficient solution. The bondpad-down configuration is designed for a flux
eutectic die-attach process, eliminating the need for wire bonds, and enables superior performance from improved
thermal management.
FEATURES
APPLICATIONS
•
Direct Attach LED Technology
•
•
Rectangular LED RF Performance
− Aircraft
–
445-475 nm – 485+ mW
− Decorative Lighting
–
527 nm – 200+ mW
− Task Lighting
General Illumination
•
High Reliability - Eutectic Attach
− Outdoor Illumination
•
Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA
•
White LEDs
•
Maximum DC Forward Current – 1000 mA
•
Camera Flash
•
Junction-Down for Improved Thermal Management
•
Projection Displays
•
No Wire Bonds Required
•
Automotive
CxxxDA1000-Sxxx00-2-G Chip Diagram
Anode (+), 915 x 75 µm
C
CPR3ES Rev
Data Sheet:
1000 x 1000 µm
Gap 70 µm
Cathode (-), 890 x 795 µm
Thickness, 335 µm
Top View
Side View
Subject to change without notice.
www.cree.com
Bottom View
1
Maximum Ratings at TA = 25°C Notes 1,2 & 3
CxxxDA1000-Sxxx00-2-G
DC Forward Current
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1500 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
≤30°C / ≤85% RH
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA1000-Sxxx00-2-G
2.9
3.15
3.4
2
20
C460DA1000-Sxxx00-2-G
2.9
3.15
3.4
2
21
C470DA1000-Sxxx00-2-G
2.9
3.15
3.4
2
22
C527DA1000-Sxxx00-2-G
3.0
3.3
3.6
2
35
Mechanical Specifications
CxxxDA1000-Sxxx00-2-G
Description
Dimension
Tolerance
P-N Junction Area (μm)
960 x 960
±35
Chip Bottom Area (μm)
1000 x 1000
±35
Chip Top Area (μm)
630 x 630
±45
Chip Thickness (μm)
335
±25
Bond Pad Width – Anode (um)
75
±15
Bond Pad Length – Anode (um)
915
±35
Bond Pad Width – Cathode (um)
795
±35
Bond Pad Length – Cathode (um)
890
±35
Bond Pad Gap (μm)
Bond Pad Thickness (μm)
70
±15
3
±0.5
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2.
All products conform to the listed minimum and maximum specifications
for electrical and optical characteristics when assembled and operated at
350 mA within the maximum ratings shown above. Efficiency decreases
at higher currents. Typical values given are within the range of average
values expected by manufacturer in large quantities and are provided
for information only. All measurements were made using lamps in T-1¾
packages (with Hysol OS4000 epoxy encapsulant and flux eutectic die
attach). Optical characteristics measured in an integrating sphere using
Illuminance E.
The maximum forward current is determined by the thermal resistance
between the LED junction and ambient. It is crucial for the end-product
to be designed in a manner that minimizes the thermal resistance from
the LED junction to ambient in order to optimize product performance.
1000
Maximum Forward Current (mA)
3.
1200
800
600
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
400
200
C/W
C/W
C/W
C/W
0
25
50
75
100
125
150
Ambient Temperature (C)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc.
®
2
CPR3ES Rev C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
www.cree.com
175
Standard Bins for CxxxDA1000-Sxxx00-2-G
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.
Radiant Flux (mW)
C450DA1000-S48500-2-G
C450DA1000-0325-2-G
C450DA1000-0326-2-G
C450DA1000-0327-2-G
C450DA1000-0328-2-G
C450DA1000-0321-2-G
C450DA1000-0322-2-G
C450DA1000-0323-2-G
C450DA1000-0324-2-G
C450DA1000-0317-2-G
C450DA1000-0318-2-G
C450DA1000-0319-2-G
C450DA1000-0320-2-G
C450DA1000-0313-2-G
C450DA1000-0314-2-G
C450DA1000-0315-2-G
C450DA1000-0316-2-G
C450DA1000-0309-2-G
C450DA1000-0310-2-G
C450DA1000-0311-2-G
C450DA1000-0312-2-G
625
585
550
515
485
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460DA1000-S48500-2-G
C460DA1000-0325-2-G
C460DA1000-0326-2-G
C460DA1000-0327-2-G
C460DA1000-0328-2-G
C460DA1000-0321-2-G
C460DA1000-0322-2-G
C460DA1000-0323-2-G
C460DA1000-0324-2-G
C460DA1000-0317-2-G
C460DA1000-0318-2-G
C460DA1000-0319-2-G
C460DA1000-0320-2-G
C460DA1000-0313-2-G
C460DA1000-0314-2-G
C460DA1000-0315-2-G
C460DA1000-0316-2-G
C460DA1000-0309-2-G
C460DA1000-0310-2-G
C460DA1000-0311-2-G
C460DA1000-0312-2-G
625
585
550
515
485
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc.
®
3
CPR3ES Rev C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxDA1000-Sxxxx00-2-G
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.
Radiant Flux (mW)
C470DA1000-S48500-2-G
C470DA1000-0321-2-G
C470DA1000-0322-2-G
C470DA1000-0323-2-G
C470DA1000-0324-2-G
C470DA1000-0317-2-G
C470DA1000-0318-2-G
C470DA1000-0319-2-G
C470DA1000-0320-2-G
C470DA1000-0313-2-G
C470DA1000-0314-2-G
C470DA1000-0315-2-G
C470DA1000-0316-2-G
C470DA1000-0309-2-G
C470DA1000-0310-2-G
C470DA1000-0311-2-G
C470DA1000-0312-2-G
585
550
515
485
465
467.5
470
475
472.5
Dominant Wavelength (nm)
Radiant Flux (mW)
C527DA1000-S20000-2-G
C527DA1000-0216-2-G
C527DA1000-0217-2-G
C527DA1000-0218-2-G
C527DA1000-0213-2-G
C527DA1000-0214-2-G
C527DA1000-0215-2-G
C527DA1000-0210-2-G
C527DA1000-0211-2-G
C527DA1000-0212-2-G
C527DA1000-0207-2-G
C527DA1000-0208-2-G
C527DA1000-0209-2-G
275
250
225
200
520
525
530
535
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc.
®
4
CPR3ES Rev C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
Relative Light Intensity Vs Junction Temperature
250%
200%
150%
100%
50%
0%
100%
Relative Light Intensity
Relative Light Intensity
300%
0
250
500
750
1000
1250
95%
90%
85%
80%
75%
70%
65%
1500
25
50
75
100
125
Junction Temperature (°C)
If (mA)
12
9
6
3
0
-3
-6
-9
-12
Dominant Wavelength Shift Vs Junction Temperature
6
5
DW Shift (nm)
DW Shift (nm)
Wavelength Shift vs. Forward Current
0
250
500
750
1000
1250
4
3
2
1
0
1500
25
50
75
If (mA)
150
0.000
Voltage Shift (V)
1250
1000
If (mA)
125
Voltage Shift Vs Junction Temperature
1500
750
500
-0.050
-0.100
-0.150
-0.200
-0.250
-0.300
250
-0.350
2
2.5
3
3.5
4
4.5
5
-0.400
25
50
Vf (V)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc.
CPR3ES Rev C
75
100
125
150
Junction Temperature (°C)
®
5
100
Junction Temperature (°C)
Forward Current vs. Forward Voltage
0
150
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc.
®
6
CPR3ES Rev C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
www.cree.com