Cree® MegaBright® LEDs Data sheet CxxxMB290-Sxx00 Cree’s MB™ series of MegaBright® LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs. Cree’s MB series chips are compatible with most radial and SMT LED assembly processes. FEATURES • APPLICATIONS MegaBright LED Performance • White LEDs – 460 nm – 8+ mW • LCD Backlighting Units – 470 nm – 8+ mW • Outdoor LED Video Displays – 527 nm – 5+ mW • Automotive Interior Lighting • Single Wire Bond Structure • Low Forward Voltage – • 3.2 V Typical at 20 mA Class 2 ESD Rating R3CK, Rev. D Datasheet: CP CxxxMB290-Sxx00 Chip Diagram Cathode (-), 80 x 80 µm Anode (+), Ф112 µm Bottom Surface 200 x 200 µm 300 x 300 µm Junction, 250 x 250 µm Top View Thickness, 250 µm Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxMB290-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Electrostatic Discharge Threshold (HBM)Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max. (λD, nm) Min. Typ. Max. Max. Typ. C460MB290-Sxxxx 2.9 3.2 3.7 2 21 C470MB290-Sxxxx 2.9 3.2 3.7 2 22 C527MB290-Sxxxx 2.9 3.3 3.9 2 35 Mechanical Specifications Description CxxxMB290-Sxx00 Dimension Tolerance P-N Junction Area (μm) 250 x 250 ± 25 Top Area (μm) 300 x 300 ± 25 Chip Thickness (μm) 250 ± 25 200 x 200 ± 25 112 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Backside Metal Diameter (μm) 104 ± 20 Bottom Area (μm) Au Bond Pad Diameter (μm) Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000 encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are performed on each die and are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each specific application. Optical characteristics measured in an integrating sphere using Illuminance E. 4. To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm. 5. Specifications are subject to change without notice. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 2 CPR3CK Rev. D (201410) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxMB290-Sxx00 LED chips are sorted to the radiant flux (RF) and dominant wavelength (DW) bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxMB290-Sxxxx) orders may be filled with any or all bins (CxxxMB290-xxxx) contained in the kit. All RF values and DW values are measured at If = 20 mA. C460MB290-S0800 C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 C460MB290-0213 C460MB290-0214 C460MB290-0215 C460MB290-0216 C460MB290-0209 C460MB290-0210 C460MB290-0211 C460MB290-0212 C460MB290-0205 C460MB290-0206 C460MB290-0207 C460MB290-0208 C460MB290-0201 C460MB290-0202 C460MB290-0203 C460MB290-0204 Radiant Flux (mW) 18 16 14 12 10 8 455 457.5 460 462.5 Dominant Wavelength (nm) 465 C470MB290-S0800 C470MB290-0217 C470MB290-0218 C470MB290-0219 C470MB290-0220 C470MB290-0213 C470MB290-0214 C470MB290-0215 C470MB290-0216 C470MB290-0209 C470MB290-0210 C470MB290-0211 C470MB290-0212 C470MB290-0205 C470MB290-0206 C470MB290-0207 C470MB290-0208 C470MB290-0201 C470MB290-0202 C470MB290-0203 C470MB290-0204 Radiant Flux (mW) 16 14 12 10 8 465 467.5 470 472.5 Dominant Wavelength (nm) 475 Radiant Flux (mW) C527MB290-S0500 C527MB290-0210 C527MB290-0211 C527MB290-0212 C527MB290-0207 C527MB290-0208 C527MB290-0209 C527MB290-0204 C527MB290-0205 C527MB290-0206 C527MB290-0201 C527MB290-0202 C527MB290-0203 8 7 6 5 520 525 530 535 Dominant Wavelength (nm) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 3 CPR3CK Rev. D (201410) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves Relative Light Intensity These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs. Forward Current 400% 300% 200% 100% 0% 0 20 40 60 80 100 80 100 If (mA) Wavelength Shift vs. Forward Current DW Shift (nm) 10 5 0 -5 -10 -15 0 20 40 60 If (mA) Forward Current vs. Forward Voltage 100 If (mA) 80 60 40 20 0 2 3 4 5 Vf (V) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 4 CPR3CK Rev. D (201410) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the MB LED product. Actual patterns will vary slightly for each chip. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 5 CPR3CK Rev. D (201410) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips