Cree MegaBright LED Chips

Cree® MegaBright® LEDs
Data sheet
CxxxMB290-Sxx00
Cree’s MB™ series of MegaBright® LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC®
substrate to deliver superior price/performance for high-intensity LEDs.
These LED chips have a geometrically
enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire bond connection.
These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs. Cree’s MB series chips are compatible with most radial and SMT LED assembly processes.
FEATURES
•
APPLICATIONS
MegaBright LED Performance
•
White LEDs
–
460 nm – 8+ mW
•
LCD Backlighting Units
–
470 nm – 8+ mW
•
Outdoor LED Video Displays
–
527 nm – 5+ mW
•
Automotive Interior Lighting
•
Single Wire Bond Structure
•
Low Forward Voltage
–
•
3.2 V Typical at 20 mA
Class 2 ESD Rating
R3CK, Rev. D
Datasheet: CP
CxxxMB290-Sxx00 Chip Diagram
Cathode (-), 80 x 80 µm
Anode (+), Ф112 µm
Bottom Surface
200 x 200 µm
300 x 300 µm
Junction, 250 x 250 µm
Top View
Thickness, 250 µm
Side View
Subject to change without notice.
www.cree.com
Bottom View
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxMB290-Sxx00
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
≤30°C / ≤85% RH
Electrostatic Discharge Threshold (HBM)Note 2
1000 V
Electrostatic Discharge Classification (MIL-STD-883E)Note 2
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460MB290-Sxxxx
2.9
3.2
3.7
2
21
C470MB290-Sxxxx
2.9
3.2
3.7
2
22
C527MB290-Sxxxx
2.9
3.3
3.9
2
35
Mechanical Specifications
Description
CxxxMB290-Sxx00
Dimension
Tolerance
P-N Junction Area (μm)
250 x 250
± 25
Top Area (μm)
300 x 300
± 25
Chip Thickness (μm)
250
± 25
200 x 200
± 25
112
± 20
Au Bond Pad Thickness (μm)
1.2
± 0.5
Backside Metal Diameter (μm)
104
± 20
Bottom Area (μm)
Au Bond Pad Diameter (μm)
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000
encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by
the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of
the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly
processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are performed on each die and are designed to approximate the minimum ESD ratings
shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach
adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each
specific application. Optical characteristics measured in an integrating sphere using Illuminance E.
4. To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm.
5. Specifications are subject to change without notice.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of
Henkel Corporation.
2
CPR3CK Rev. D (201410)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxMB290-Sxx00
LED chips are sorted to the radiant flux (RF) and dominant wavelength (DW) bins shown. Sorted die sheets contain
die from only one bin. Sorted die kit (CxxxMB290-Sxxxx) orders may be filled with any or all bins (CxxxMB290-xxxx)
contained in the kit. All RF values and DW values are measured at If = 20 mA.
C460MB290-S0800
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
C460MB290-0213
C460MB290-0214
C460MB290-0215
C460MB290-0216
C460MB290-0209
C460MB290-0210
C460MB290-0211
C460MB290-0212
C460MB290-0205
C460MB290-0206
C460MB290-0207
C460MB290-0208
C460MB290-0201
C460MB290-0202
C460MB290-0203
C460MB290-0204
Radiant Flux (mW)
18
16
14
12
10
8
455
457.5
460
462.5
Dominant Wavelength (nm)
465
C470MB290-S0800
C470MB290-0217
C470MB290-0218
C470MB290-0219
C470MB290-0220
C470MB290-0213
C470MB290-0214
C470MB290-0215
C470MB290-0216
C470MB290-0209
C470MB290-0210
C470MB290-0211
C470MB290-0212
C470MB290-0205
C470MB290-0206
C470MB290-0207
C470MB290-0208
C470MB290-0201
C470MB290-0202
C470MB290-0203
C470MB290-0204
Radiant Flux (mW)
16
14
12
10
8
465
467.5
470
472.5
Dominant Wavelength (nm)
475
Radiant Flux (mW)
C527MB290-S0500
C527MB290-0210
C527MB290-0211
C527MB290-0212
C527MB290-0207
C527MB290-0208
C527MB290-0209
C527MB290-0204
C527MB290-0205
C527MB290-0206
C527MB290-0201
C527MB290-0202
C527MB290-0203
8
7
6
5
520
525
530
535
Dominant Wavelength (nm)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of
Henkel Corporation.
3
CPR3CK Rev. D (201410)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Characteristic Curves
Relative Light Intensity
These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Relative Intensity vs. Forward Current
400%
300%
200%
100%
0%
0
20
40
60
80
100
80
100
If (mA)
Wavelength Shift vs. Forward Current
DW Shift (nm)
10
5
0
-5
-10
-15
0
20
40
60
If (mA)
Forward Current vs. Forward Voltage
100
If (mA)
80
60
40
20
0
2
3
4
5
Vf (V)
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of
Henkel Corporation.
4
CPR3CK Rev. D (201410)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the MB LED product. Actual patterns will
vary slightly for each chip.
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of
Henkel Corporation.
5
CPR3CK Rev. D (201410)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips