C450EZ1350

Cree® EZ1350™ LEDs
Data Sheet (Anode-up)
CxxxEZ1350-Sxxx00-x
Cree’s EZBright® LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux
eutectic attach. These vertically structured, low forward voltage LED chips are approximately 170 microns in height
and are tested for conformity to optical and electrical specifications. Cree’s EZ™ chips are useful in a broad range of
applications such as general illumination, automotive lighting and mobile flash.
FEATURES
APPLICATIONS
•
Lambertian Radiation Pattern
•
•
Anode-up design (p-pad up)
•
EZBright LED Technology, binned @ 350 mA
– 450 nm - 560+ mW
– 460 nm - 560+ mW
General Illumination
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
•
Low Forward Voltage (Vf) – 3.0 V Typical at 350 mA
•
White LEDs
•
Maximum DC Forward Current – 1500 mA
•
Projection Displays
•
Backside Metal versions for various attach methods:
-A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms
-G (LTDA) for Low Temperature Flux Eutectic Attach
•
Automotive Exterior
•
Mobile Flash
CxxxEZ1350-Sxxx00-x Chip Diagram
A
CPR3FY Rev
Data Sheet:
1330 x 1330 µm
Backside Ohmic
Mesa (Junction), 1300 x 1300 µm
Metallization
Bond pads (2), 130 x 130 µm
Anode (+), 2 places
Cathode (-)
Thickness, 170 µm
Top View
Side View
Subject to change without notice.
www.cree.com
Bottom View
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ1350-Sxxx00-x
DC Forward Current
1500 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
2000 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
≤30°C / ≤85% RH
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Forward Voltage (Vf, V)
Note 2
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ1350-Sxxxx00-x
2.6
3.0
3.4
2
20
C460EZ1350-Sxxxx00-x
2.6
3.0
3.4
2
21
Mechanical Specifications
CxxxEZ1350-Sxxx00-x
Description
Dimensions
Tolerance
P-N Junction Area (μm)
1300 x 1300
± 35
Chip Area (μm)
1330 x 1330
± 35
170
± 25
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
130 x 130
± 25
3.0
± 1.5
1330 x 1330
± 35
3.3
± 1.5
Au Bond Pad Thickness (μm)
Backside Ohmic Metal Area (μm)
Backside Ohmic Metal Thickness (μm)
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for
characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to
determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications
Note for assembly-process information.
2.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
3.
The maximum forward current is determined
by the thermal resistance between the LED
junction and ambient. It is crucial for the
end-product to be designed in a manner that
minimizes the thermal resistance from the LED
junction to ambient in order to optimize product
performance.
1600
Maximum Operating Current (mA)
1400
1200
1000
800
Rth j-a = 5 °C/W
Rth j-a = 10 °C/W
Rth j-a = 15 °C/W
Rth j-a = 20 °C/W
600
400
200
0
25
50
75
100
125
150
Ambient Temperature (°C)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ1350™ are trademarks of Cree, Inc.
2
CPR3FY Rev A (201502)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Standard Bins for CxxxEZ1350-Sxxx00-x
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1350-Sxxx00-x) orders may be filled with any or all bins (CxxxEZ1350-0xxx-x)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated headers without an encapsulant.
Radiant Flux (mW)
C450EZ1350-S56000-x
C450EZ1350-0225-x
C450EZ1350-0226-x
C450EZ1350-0227-x
C450EZ1350-0228-x
C450EZ1350-0221-x
C450EZ1350-0222-x
C450EZ1350-0223-x
C450EZ1350-0224-x
C450EZ1350-0217-x
C450EZ1350-0218-x
C450EZ1350-0219-x
C450EZ1350-0220-x
C450EZ1350-0213-x
C450EZ1350-0214-x
C450EZ1350-0215-x
C450EZ1350-0216-x
C450EZ1350-0209-x
C450EZ1350-0210-x
C450EZ1350-0211-x
C450EZ1350-0212-x
C450EZ1350-0205-x
C450EZ1350-0206-x
C450EZ1350-0207-x
C450EZ1350-0208-x
660
640
620
600
580
560
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460EZ1350-S56000-x
C460EZ1350-0225-x
C460EZ1350-0226-x
C460EZ1350-0227-x
C460EZ1350-0228-x
C460EZ1350-0221-x
C460EZ1350-0222-x
C460EZ1350-0223-x
C460EZ1350-0224-x
C460EZ1350-0217-x
C460EZ1350-0218-x
C460EZ1350-0219-x
C460EZ1350-0220-x
C460EZ1350-0213-x
C460EZ1350-0214-x
C460EZ1350-0215-x
C460EZ1350-0216-x
C460EZ1350-0209-x
C460EZ1350-0210-x
C460EZ1350-0211-x
C460EZ1350-0212-x
C460EZ1350-0205-x
C460EZ1350-0206-x
C460EZ1350-0207-x
C460EZ1350-0208-x
660
640
620
600
580
560
455
457.5
460
462.5
465
Dominant Wavelength (nm)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ1350™ are trademarks of Cree, Inc.
3
CPR3FY Rev A (201502)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Characteristic Curves, TA = 25°C
Relative Intensity vs. Forward Current
500%
Relative Light Intensity Vs Junction Temperature
400%
300%
200%
100%
0%
0
500
1000
1500
2000
Relative Light Intensity
Relative Light Intensity
This is a representative measurement for the EZ1350 LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
100%
95%
90%
85%
80%
75%
25
If (mA)
DW Shift (nm)
DW Shift (nm)
6
1
0
-1
5
4
3
2
1
0
500
1000
1500
0
2000
25
If (mA)
-0.050
2
2.5
3
Vf (V)
3.5
4
-0.100
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
25
50
CPR3FY Rev A (201502)
75
100
125
150
Junction Temperature (°C)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ1350™ are trademarks of Cree, Inc.
4
150
0.000
Voltage Shift (V)
If (mA)
50
75
100
125
Junction Temperature (°C)
Voltage Shift Vs Junction Temperature
Forward Current vs. Forward Voltage
2000
1750
1500
1250
1000
750
500
250
0
150
Dominant Wavelength Shift Vs Junction Temperature
Wavelength Shift vs. Forward Current
2
-2
50
75
100
125
Junction Temperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the EZ LED products. Actual patterns will vary slightly for each chip.
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ1350™ are trademarks of Cree, Inc.
5
CPR3FY Rev A (201502)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips