Cree® EZ950™ LEDs Data Sheet (Anode-up) CxxxEZ950-Sxxx00-x Cree’s EZBright® LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux eutectic attach. These vertically structured, low forward voltage LED chips are approximately 170 microns in height and are tested for conformity to optical and electrical specifications. Cree’s EZ™ chips are useful in a wide range of applications including general illumination, automotive lighting and mobile flash. FEATURES APPLICATIONS • Lambertian Radiation Pattern • • Anode-up design (p-pad up) • EZBright LED Technology, binned @ 350 mA – 450 nm – 440+ mW – 460 nm – 420+ mW – 470 nm – 400+ mW – 527 nm – 170+ mW General Illumination –Aircraft – Decorative Lighting – Task Lighting – Outdoor Illumination • White LEDs • Projection Displays • Low Forward Voltage (Vf) – 3.1 V Typical at 350 mA • Automotive Exterior • Maximum DC Forward Current – 1000 mA • Mobile Flash • Backside Metal versions for various attach methods: -A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms -G (LTDA) for Low Temperature Flux Eutectic Attach CxxxEZ950-Sxxx00-x Chip Diagram Backside Ohmic Metallization Mesa (Junction), 900 x 900 µm C CPR3FW Rev Data Sheet: 930 x 930 µm Bond pads (2), 130 x 130 µm Anode (+), 2 places Thickness 170 µm Top View Side View Subject to change without notice. www.cree.com Cathode (-) Bottom View 1 Maximum Ratings at TA = 25°C Note 1, 2 & 3 CxxxEZ950-Sxxx00-x DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1500 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature Range -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ950-Sxxx00-x 2.7 3.1 3.4 2 20 C460EZ950-Sxxx00-x 2.7 3.1 3.4 2 21 C470EZ950-Sxxx00-x 2.7 3.1 3.4 2 22 C527EZ950-Sxxx00-x 2.8 3.25 3.8 2 35 Mechanical Specifications CxxxEZ950-Sxxx00-x Description Dimensions Tolerance P-N Junction Area (μm) 900 x 900 ± 35 Chip Area (μm) 930 x 930 ± 35 170 ± 25 Chip Thickness (μm) Top Au Bond Pad (μm) - Qty. 2 Au Bond Pad Thickness (μm) Backside Ohmic Metal Area (μm) 130 x 130 ± 25 1.0 ± 0.5 930 x 930 ± 35 Backside Ohmic Metal Thickness (μm) – “-A” (AuSn) 3.0 ± 1.5 Backside Ohmic Metal Thickness (μm) – “-G” (LTDA) 3.3 ± 1.5 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See the Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Operating Current (mA) 3. 1200 1000 800 600 Rth j-a = 10 °C/W Rth j-a = 15 °C/W Rth j-a = 20 °C/W Rth j-a = 25 °C/W 400 200 0 25 50 75 100 125 150 Ambient Temperature (°C) © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc. 2 CPR3FW Rev C (201501) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Standard Bins for CxxxEZ950-Sxxx00-x LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ950-Sxxx00-x) orders may be filled with any or all bins (CxxxEZ950-0xxx-x) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. C450EZ950-S44000-x Radiant Flux (mW) 560 540 520 500 480 460 440 445 C450EZ950-0333-x C450EZ950-0334-x C450EZ950-0335-x C450EZ950-0336-x C450EZ950-0329-x C450EZ950-0330-x C450EZ950-0331-x C450EZ950-0332-x C450EZ950-0325-x C450EZ950-0326-x C450EZ950-0327-x C450EZ950-0328-x C450EZ950-0321-x C450EZ950-0322-x C450EZ950-0323-x C450EZ950-0324-x C450EZ950-0317-x C450EZ950-0318-x C450EZ950-0319-x C450EZ950-0320-x C450EZ950-0313-x C450EZ950-0314-x C450EZ950-0315-x C450EZ950-0316-x C450EZ950-0309-x C450EZ950-0310-x C450EZ950-0311-x C450EZ950-0312-x 447.5 450 452.5 455 Dominant Wavelength (nm) C460EZ950-S42000-x Radiant Flux (mW) 540 520 C460EZ950-0329-x C460EZ950-0330-x C460EZ950-0331-x C460EZ950-0332-x C460EZ950-0325-x C460EZ950-0326-x C460EZ950-0327-x C460EZ950-0328-x C460EZ950-0321-x C460EZ950-0322-x C460EZ950-0323-x C460EZ950-0324-x C460EZ950-0317-x C460EZ950-0318-x C460EZ950-0319-x C460EZ950-0320-x C460EZ950-0313-x C460EZ950-0314-x C460EZ950-0315-x C460EZ950-0316-x C460EZ950-0309-x C460EZ950-0310-x C460EZ950-0311-x C460EZ950-0312-x C460EZ950-0305-x C460EZ950-0306-x C460EZ950-0307-x C460EZ950-0308-x 500 480 460 440 420 455 457.5 460 462.5 465 Dominant Wavelength (nm) © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc. 3 CPR3FW Rev C (201501) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Standard Bins for CxxxEZ950-Sxxx00-x LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ950-Sxxx00-x) orders may be filled with any or all bins (CxxxEZ950-0xxx-x) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. Radiant Flux (mW) C470EZ950-S40000-x C470EZ950-0321-x C470EZ950-0322-x C470EZ950-0323-x C470EZ950-0324-x C470EZ950-0317-x C470EZ950-0318-x C470EZ950-0319-x C470EZ950-0320-x C470EZ950-0313-x C470EZ950-0314-x C470EZ950-0315-x C470EZ950-0316-x C470EZ950-0309-x C470EZ950-0310-x C470EZ950-0311-x C470EZ950-0312-x C470EZ950-0305-x C470EZ950-0306-x C470EZ950-0307-x C470EZ950-0308-x C470EZ950-0301-x C470EZ950-0302-x C470EZ950-0303-x C470EZ950-0304-x 500 480 460 440 420 400 465 467.5 470 472.5 475 Dominant Wavelength (nm) Radiant Flux (mW) C527EZ950-S17000-x 250 230 210 C527EZ950-0316-x C527EZ950-0317-x C527EZ950-0318-x C527EZ950-0313-x C527EZ950-0314-x C527EZ950-0315-x C527EZ950-0310-x C527EZ950-0311-x C527EZ950-0312-x C527EZ950-0307-x C527EZ950-0308-x C527EZ950-0309-x C527EZ950-0304-x C527EZ950-0305-x C527EZ950-0306-x 190 170 520 525 530 535 Dominant Wavelength (nm) © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc. 4 CPR3FW Rev C (201501) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Characteristic Curves, TA = 25°C Relative Intensity vs. Forward Current 300% Relative Light Intensity Vs Junction Temperature 250% 200% 150% 100% 50% 0% 0 250 500 750 1000 1250 Relative Light Intensity Relative Light Intensity This is a representative measurement for the EZ950™ LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 100% 95% 90% 85% 80% 75% If (mA) Wavelength Shift vs. Forward Current 0 -5 250 500 750 1000 1250 If (mA) Dominant Wavelength Shift (nm) Dominant Wavelength Shift (nm) 5 0 6 5 4 3 2 1 0 -1 -2 25 Forward Current vs. Forward Voltage 1000 -0.100 Voltage Shift (V) 0.000 If (mA) 1250 750 500 250 0 2 2.5 3 Vf (V) 3.5 50 75 100 125 Junction Temperature (°C) 4 50 75 100 125 Junction Temperature (°C) CPR3FW Rev C (201501) 150 Voltage Shift Vs Junction Temperature -0.200 -0.300 -0.400 -0.500 25 50 75 100 125 Junction Temperature (°C) © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc. 5 150 Dominant Wavelength Shift Vs Junction Temperature 10 -10 25 150 Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZ LED products. Actual patterns will vary slightly for each chip. © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc. 6 CPR3FW Rev C (201501) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips