PD - _____
IRLP2505
PRELIMINARY
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
VDSS = 55V
RDS(on) = 0.008Ω
ID = 90A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
90
64
360
150
1.0
±20
500
54
15
2.9
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.24
––––
1.0
––––
40
°C/W
8/4/95
IRLP2505
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
55
–––
–––
–––
–––
1.0
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
160
43
84
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.008
VGS = 10V, ID = 54A
0.010
Ω
VGS = 5.0V, ID = 54A
0.013
VGS = 4.0V, ID = 45A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 54A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
130
ID = 54A
25
nC VDS = 44V
67
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 54A
ns
–––
RG = 1.3Ω, VGS = 5.0V
–––
RD = 0.50Ω, See Fig. 10
Between lead,
––– 5.0 –––
6mm (0.25in.)
nH
from package
––– 13 –––
and center of die contact
––– 5000 –––
VGS = 0V
––– 1100 –––
pF
VDS = 25V
––– 390 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
90
–––
–––
360
–––
–––
–––
–––
140
650
1.3
210
970
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 54A, VGS = 0V
TJ = 25°C, IF = 54A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 25V, starting T J = 25°C, L = 240µH
RG = 25Ω, IAS = 54A. (See Figure 12)
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 54A, di/dt ≤ 130A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 175°C
IRLP2505
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
100
2.5V
10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
3.5
4.5
5.5
6.5
10
A
100
Fig 2. Typical Output Characteristics,
TJ = 175oC
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
20µs PULSE WIDTH
T J = 175°C
1
0.1
A
100
VDS , Drain-to-Source Voltage (V)
2.5
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
A
7.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
I D = 90A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLP2505
10000
VGS , Gate-to-Source Voltage (V)
8000
C, Capacitance (pF)
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
6000
Coss
4000
2000
Crss
0
10
VDS = 44V
VDS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
I D = 54A
100
0
VDS , Drain-to-Source Voltage (V)
80
120
160
A
200
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
40
100
TJ = 175°C
TJ = 25°C
100
100µs
1ms
10
10ms
VGS = 0V
10
0.4
0.8
1.2
1.6
2.0
2.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRLP2505
RD
VDS
90
VGS
LIMITED BY PACKAGE
ID, Drain Current (Amps)
80
D.U.T.
RG
VDD
70
5.0V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50
40
Fig 10a. Switching Time Test Circuit
30
20
10
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
PD M
0.10
t
0.05
1
t
0.02
0.01
0.01
0.00001
N otes :
1 . D u ty fa c tor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
1
/ t
2
2
2. P ea k TJ = P D M x Z th J C + T C
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5.0 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRLP2505
1200
ID
22A
38A
BOTTOM 54A
TOP
1000
800
600
400
200
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
5.0 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLP2505
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLP2505
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
0.25 (.010) M D B M
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
-D5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
NOTES:
5.50 (.217)
4.50 (.177)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
3
-C-
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
3.40 (.133)
3.00 (.118)
C A S
2.60 (.102)
2.20 (.087)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 3A1Q
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
3A1Q 9302
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157,
61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg.,
2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan
Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.